Method and system for performing built-in self-test routines using an accumulator to store fault information

• US 7,260,758 B1
• Filed: 09/07/2001
• Issued: 08/21/2007
• Est. Priority Date: 09/07/2001
• Status: Expired due to Fees

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: LSI Corporation (Broadcom, Inc.)
• Inventors: Puri, Mukesh K., Agrawal, Ghasi R., Schwarz, William
• Primary Examiner(s): KERVEROS, DEMETRIOS C
• Application Number:
  US09/949,399
• Time in Patent Office: 2,174 Days
• Field of Search: 714/733, 714/734, 714/718, 714/723, 365/201, 365/200
• US Class Current: 714/733
• CPC Class Codes: G11C 29/56 External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
• CPC Class Codes: G11C 29/56008 Error analysis, representation of errors

Abstract

A test system includes a built-in self-test (BIST) circuit and a stress applicator for use in analyzing a memory array. The stress applicator applies a selective set of stress factors to the memory array, such as temperature and voltage conditions. The BIST circuit executes a test routine on the memory array to detect the presence of any faulty memory address locations that may arise under the prevailing stress condition. A full testing cycle involves iterative repetition of the functions performed by the stress applicator and BIST circuit, with variations in the stress factors across the testing iterations. An accumulator cumulatively stores the fault information generated by the BIST circuit during each testing iteration. Following completion of the testing cycle, a repair operation is performed by a built-in self-repair (BISR) circuit to remap the faulty memory address locations indicated by the accumulator to redundant memory address locations.

Claims

1. A method for use with a memory array, said method comprising the steps of:

(i) subjecting the memory array to a selectively variable stress condition;

(ii) testing the memory array to detect faulty memory locations therein;

(iii) generating fault information indicative of any faulty memory address locations detected by the testing operation;

(iv) cumulatively storing the fault information;

(v) defining a fault count based upon the cumulatively stored fault information;

(vi) comparing the fault count to a redundant memory count; and

(vii) iteratively repeating steps (i), (ii), (iii), (iv), (v) and (vi).

2. The method as recited in claim 1, further comprises the step of:

reconfiguring any faulty portions of the memory array as indicated by the cumulatively stored fault information, following completion of the last iteration.

3. The method as recited in claim 1, further comprises the step of:

remapping the memory address locations represented by the cumulatively stored fault information to redundant memory address locations, following completion of the last iteration.

4. The method as recited in claim 3, further comprises the step of:

providing a built-in self-repair module to operatively perform the remapping function.

5. The method as recited in claim 1, further comprises the step of:

repairing the memory address locations represented by the cumulatively stored fault information with redundant memory address locations.

6. The method as recited in claim 1, further comprises the step of:

providing a built-in self-test module to operatively perform the testing function.

7. The method as recited in claim 6, wherein the testing step further comprises the steps of:

generating a test pattern using the built-in self-test module; and

exercising at least a portion of the memory array with the test pattern.

8. The method as recited in claim 1, further comprises the steps of:

providing a storage area for use in cumulatively storing the fault information; and

resetting the storage area, prior to storage of fault information associated with a first iteration.

9. The method as recited in claim 1, wherein each iteration further comprises the steps of:

rejecting the memory array if the fault count exceeds the redundant memory count, as indicated by the comparison operation.

10. The method as recited in claim 1, wherein the fault count relates to faulty memory locations, and the redundant memory count relates to redundant memory locations.

11. The method as recited in claim 1, wherein the step of subjecting the memory array to a selectively variable stress condition further comprises the step of:

selectively setting at least one of an environmental factor and an operational factor in relation to the memory array.

12. The method as recited in claim 1, wherein the step of subjecting the memory array to a selectively variable stress condition further comprises the step of:

selectively setting at least one of a voltage condition and a temperature condition of the memory array.

13. The method as recited in claim 1, wherein the memory array includes a dynamic random access memory.

14. The method as recited in claim 1, wherein the memory array includes a static random access memory.

15. A method for use with a memory array, said method comprising the steps of:

(i) subjecting the memory array to a selectively variable stress condition;

(ii) testing the memory array to detect faulty memory locations therein;

(iii) generating fault information indicative of any faulty memory address locations detected by the testing operation;

(iv) cumulatively storing the fault information;

(v) identifying a quantity of faulty memory locations corresponding to the cumulatively stored fault information; and

(vi) comparing the quantity of faulty memory locations to a quantity of redundant memory locations; and

(vii) rejecting the memory array if the quantity of faulty memory locations exceeds the quantity of redundant memory locations, as indicated by the comparison operation;

(viii) iteratively repeating steps (i), (ii), (iii), (iv), (v), (vi) and (vii).

16. The method as recited in claim 15, further comprises the step of:

reconfiguring any faulty portions of the memory array as indicated by the cumulatively stored fault information, following completion of the last iteration.

17. The method as recited in claim 15, further comprises the step of:

remapping the memory address locations represented by the cumulatively stored fault information to redundant memory address locations, following completion of the last iteration.

18. The method as recited in claim 17, further comprises the step of:

providing a built-in self-repair module to operatively perform the remapping function.

19. The method as recited in claim 15, further comprises the step of:

repairing the memory address locations represented by the cumulatively stored fault information with redundant memory address locations.

20. The method as recited in claim 15, further comprises the step of:

providing a built-in self-test module to operatively perform the testing function.

21. The method as recited in claim 20, wherein the testing step further comprises the steps of:

generating a test pattern using the built-in self-test module; and

exercising at least a portion of the memory array with the test pattern.

22. The method as recited in claim 15, further comprises the steps of:

providing a storage area for use in cumulatively storing the fault information; and

resetting the storage area, prior to storage of fault information associated with a first iteration.