Multilayer system with protecting layer system and production method

• US 7,261,957 B2
• Filed: 11/12/2003
• Issued: 08/28/2007
• Est. Priority Date: 03/31/2000
• Status: Expired due to Term

• Current Assignee: CARL Zeiss SMT GmbH (Carl-Zeiss-Stiftung)
• Original Assignee: Carl Zeiss AG (Carl-Zeiss-Stiftung)
• Inventors: Louis, Eric, Yakshin, Andrey E., Bijkerk, Frederik, Verhoeven, Jan, Oestreich, Sebastian, van de Kruijs, Robbert Wilhelmus Elisabeth, Görts, Peter Cornelis, Alink, Lambertus Gerhardus Albertus Michael
• Primary Examiner(s): BLACKWELL, GWENDOLYN
• Application Number:
  US10/706,826
• Publication Number:
  US 20040121134A1
• Time in Patent Office: 1,385 Days
• Field of Search: 428/212, 428/408, 428/698, 428/472, 428/469, 428/701, 428/641, 428/450, 250/505, 250/505.1, 359/359, 359/360, 359/361
• US Class Current: 428/701
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G02B 1/115 Multilayers
• CPC Class Codes: G02B 5/0875 the reflecting layers comprising two or more metallic layers
• CPC Class Codes: G02B 5/0891 Ultraviolet [UV] mirrors apparatus for microlithography exposure G03F7/70; X-ray multilayer structures G21K1/06
• CPC Class Codes: G02B 5/208 for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
• CPC Class Codes: G02B 5/283 designed for the ultraviolet
• CPC Class Codes: G03F 7/708 Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
• CPC Class Codes: G21K 1/062 Devices having a multilayer structure
• CPC Class Codes: G21K 2201/067 Construction details
• CPC Class Codes: Y10T 428/12674 Ge- or Si-base component
• CPC Class Codes: Y10T 428/24942 including components having same physical characteristic in differing degree

Abstract

A multilayer system and its production. Multilayer systems, such as those used as mirrors in the extreme ultraviolet wavelength range, suffer contamination or oxidation during storage in air and in long-time operation, i.e. when exposed to EUV radiation in a vacuum environment with certain partial pressures of water or oxygen, which causes a serious reduction in reflectivity. The multilayer system according to the invention will have a long life with constantly high reflectivity. Their reflectivity can be enhanced by barrier layers. The multilayer systems according to the invention have protective layers comprising iridium. The multilayer systems according to the invention are produced by direct, ion-beam-supported growth of the respective layer. The multilayer systems according to the invention are not only resistant to contamination and oxidation, but can also be cleaned if necessary, without losing reflectivity. Because of their long life with constantly high reflectivity, they are particularly suitable for use in semiconductor lithography in the soft X-ray range or extreme ultraviolet wavelength range.

Claims

1. A multilayer system for the extreme ultraviolet wavelength range, comprising:

alternating layers of materials with different refractive indices or absorption coefficients, and a protective layer system having different material than said alternating layers and being disposed on top of said alternating layers, wherein the protective layer system is molybdenum carbide covered by iridium, aluminum oxide covered by iridium, titanium nitride covered by iridium, or titanium dioxide covered by iridium.

2. A multilayer system for the extreme ultraviolet wavelength range, comprising:

alternating layers of a) molybdenum and silicon or b) molybdenum and beryllium, and a protective layer system disposed on said alternating layers, wherein the protective layer system is molybdenum carbide covered by iridium, aluminum oxide covered by iridium, titanium nitride covered by iridium or titanium dioxide covered by iridium.

3. A multilayer system for the extreme ultraviolet wavelength range, comprising:

alternating layers of materials with different refractive indices or absorption coefficients, and at least one barrier layer between two of said alternating layers, wherein said at least one barrier layer is a Mo₂C layer, and wherein a first layer of said alternating layers is a molybdenum layer and a second layer of said alternating layers is a beryllium layer.

4. A multilayer system for the extreme ultraviolet wavelength range, comprising:

alternating layers of materials with different refractive indices or absorption coefficients and at least one barrier layer between two of said alternating layers, wherein said at least one barrier layer is a Si₃N₄ layer.

5. The multilayer system according to claim 4, wherein said at least one barrier layer contains implanted nitrogen.

6. The multilayer system according to claim 4, wherein a first layer of said alternating layers is a molybdenum layer and a second layer of said alternating layers is a silicon layer.