Systems and methods for thin film thermal diagnostics with scanning thermal microstructures
First Claim
1. A method of measuring properties of a film sample, comprising:
- scanning across the sample one or more microstructures, the one or more microstructures containing at least one thermal probe and at least one of a thermal sensor and a thermal stimulator;
applying a stimulus to the one or more microstructures wherein the stimulus includes a temporally varying waveform;
detecting a response of the one or more microstructures from an interaction of the sample and the applied stimulus; and
correlating a position of the one or more microstructures with the response of the one or more microstructures;
the response of the one or more microstructures is used to determine the thickness of barrier films deposited on an integrated circuit prior to a metal electroplating step on an integrated circuit.
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Abstract
Systems and methods are described for identifying characteristics and defects in material such as semiconductors. Methods include scanning a thermal probe in the vicinity of a semiconductor sample, applying stimuli to the thermal probe, and monitoring the interaction of the thermal probe and the semiconductor. The stimulus can be applied by a variety of methods, including Joule heating of a resistor in the proximity of the probe tip, or optically heating a tip of the thermal probe using a laser. Applications of the invention include identification of voids in metallic layers in semiconductors; mapping dopant concentration in semiconductors; measuring thickness of a sample material; mapping thermal hot spots and other characteristics of a sample material.
10 Citations
34 Claims
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1. A method of measuring properties of a film sample, comprising:
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scanning across the sample one or more microstructures, the one or more microstructures containing at least one thermal probe and at least one of a thermal sensor and a thermal stimulator; applying a stimulus to the one or more microstructures wherein the stimulus includes a temporally varying waveform; detecting a response of the one or more microstructures from an interaction of the sample and the applied stimulus; and correlating a position of the one or more microstructures with the response of the one or more microstructures; the response of the one or more microstructures is used to determine the thickness of barrier films deposited on an integrated circuit prior to a metal electroplating step on an integrated circuit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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32. A method of measuring properties of a film sample, comprising:
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scanning across the sample one or more microstructures, the one or more microstructures containing at least one thermal probe and at least one of a thermal sensor and a thermal stimulator; applying a stimulus to the one or more microstructures wherein the stimulus includes a temporally varying waveform; detecting a response of the one or more microstructures from an interaction of the sample and the applied stimulus; correlating a position of the one or more microstructures with the response of the one or more microstructures; the response of the one or more microstructures identifies a thickness of the sample, and wherein the sample comprises a thin film; and the response of the one or more microstructures is used to determine the thickness of barrier films deposited on an integrated circuit prior to a metal electroplating step on an integrated circuit.
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33. A method of measuring properties of a film sample, comprising:
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scanning across the sample one or more microstructures, the one or more microstructures containing at least one thermal probe and at least one of a thermal sensor and a thermal stimulator; applying a stimulus to the one or more microstructures wherein the stimulus includes a temporally varying waveform; detecting a response of the one or more microstructures from an interaction of the sample and the applied stimulus; correlating a position of the one or more microstructures with the response of the one or more microstructures; and wherein the one or more microstructures is used to determine the thickness of the barrier films deposited on an integrated circuit prior to a metal electroplating step on an integrated circuit.
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34. A method of measuring properties of a sample, comprising:
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scanning across the sample one or more microstructures, the one or more microstructures containing at least one thermal probe including at least one of a thermal sensor and a thermal stimulator; applying a conductive heat stimulus to the one or more microstructures wherein the stimulus includes a temporally varying waveform; detecting a conductive heat response of the one or more microstructures from an interaction of the sample and the applied stimulus; and correlating a position of the one or more microstructures with the response of the one or more microstructures.
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Specification