Thin film device supply body, method of fabricating thin film device, method of transfer, method of fabricating semiconductor device, and electronic equipment

• US 7,262,088 B2
• Filed: 03/07/2005
• Issued: 08/28/2007
• Est. Priority Date: 03/10/2004
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Utsunomiya, Sumio, Kodaira, Taimei
• Primary Examiner(s): Dang; Phuc T.
• Application Number:
  US11/072,500
• Publication Number:
  US 20050202619A1
• Time in Patent Office: 904 Days
• Field of Search: 438/197, 438/455, 438/458, 438/459, 438/464, 257/E21.122
• US Class Current: 438/197
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: H10K 71/18 using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet

Abstract

A technique is described in which a layer to be transferred is easily peeled and transferred to a transferred body that is pliable or flexible. Also, a method of fabricating a semiconductor device using these peeling and transfer techniques, and electronic equipment fabricated with the semiconductor device is described. A transfer method in which a layer to be transferred formed on a substrate is transferred to a transfer body that is pliable or flexible includes the first step of forming a layer to be transferred on a substrate; the second step of bonding the layer to be transferred formed on the substrate to a transfer body that is pliable or flexible fixed on a fixture; and the third step of peeling the layer to be transferred from the substrate and transferring the layer to be transferred to the transfer body.

Claims

1. A transfer method, the method comprising:

forming a first separating layer on a substrate;

forming a layer to be transferred on the first separating layer;

bonding the layer to be transferred to a first transfer body through an adhesive layer; and

transferring the layer to be transferred to the transfer body such that the layer to be transferred is divided into a plurality of portions disposed on the first transfer body.

2. The transfer method according to claim 1, the division of the layer to be transferred into the plurality of portions being carried out by grooves that have been formed in the layer to be transferred.

3. The transfer method according to claim 1, the first transfer body being flexible.

4. The transfer method according to claim 1, the first transfer body having a fixture.

5. The transfer method according to claim 1, wherein the grooves formed on the first transfer body are formed such that the first transfer body is divided at the boundary of the plurality of regions.

6. The transfer method according to claim 2, the grooves formed on the layer to be transferred are formed at a boundary of a plurality of region of a thin film element layer that is included in the layer to be transferred.

7. The transfer method according to claim 1, the first transfer body having pliability or flexibility.

8. The transfer method according to claim 7, the first transfer body attached to a fixture.

9. The transfer method according to claim 8, wherein the fixture is an auxiliary substrate.

10. A method of fabricating a semiconductor device using the transfer method according to claim 1.

11. An electronic equipment comprising the semiconductor device fabricated using the method according to claim 10.

12. A transfer method comprising:

forming a first separating layer on a substrate;

forming a layer to be transferred on the first separating layer;

bonding the layer to be transferred to a first transfer body through an adhesive layer formed;

transferring the layer to be transferred to the first transfer body such that the layer to be transferred is divided into a plurality of portions disposed on the first transfer body;

bonding the layer to be transferred to a second transfer body;

transferring the layer to be transferred to the second transfer body.

13. The transfer method according to claim 12, the division of the layer to be transferred into the plurality of portions being carried out by grooves that have been formed in the layer to be transferred.

14. The transfer method according to claim 12, the second transfer body being flexible.

15. The transfer method according to claim 12, the second transfer body having a fixture.

16. The transfer method according to claim 12, the grooves formed in the layer to be transferred are formed at boundaries of a plurality of region of a thin film element layer that is included in the layer to be transferred.

17. The transfer method according to claim 12, the second transfer body having pliability or flexibility.

18. The transfer method according to claim 17, the first body fixed on a fixture.

19. The transfer method according to claim 18, wherein the fixture is an auxiliary substrate.

20. A method of fabricating a semiconductor device using the transfer method according to claim 12.

21. An electronic equipment comprising the semiconductor device fabricated using the method according to claim 20.