III-nitride semiconductor light emitting device having a silver p-contact
First Claim
1. A structure comprising:
- a semiconductor light emitting device comprising an n-type region, a p-type region, and an active region disposed between n-type region and the p-type region, the active region being configured to emit light; and
a reflective p-electrode overlying and electrically connected to the p-type region, the p-electrode comprising;
a first layer comprising silver;
a second layer comprising nickel; and
a third layer comprising a metal, wherein the first layer and the second layer are disposed between the p-type region and the third layer.
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Accused Products
Abstract
A light emitting device includes an n-type semiconductor layer, an active layer for generating light, the active layer being in electrical contact with the n-type semiconductor layer. A p-type semiconductor layer is in electrical contact with the active layer, and a p-electrode is in electrical contact with the p-type semiconductor layer. The p-electrode includes a layer of silver. In a preferred embodiment of the present invention, the n-type semiconductor layer and the p-type semiconductor layer are constructed from group III nitride semiconducting materials. In one embodiment of the invention, the silver layer is sufficiently thin to be transparent. In other embodiments, the silver layer is thick enough to reflect most of the light incident thereon. A fixation layer may be provided. The fixation layer may be a dielectric or a conductor.
94 Citations
11 Claims
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1. A structure comprising:
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a semiconductor light emitting device comprising an n-type region, a p-type region, and an active region disposed between n-type region and the p-type region, the active region being configured to emit light; and a reflective p-electrode overlying and electrically connected to the p-type region, the p-electrode comprising; a first layer comprising silver; a second layer comprising nickel; and a third layer comprising a metal, wherein the first layer and the second layer are disposed between the p-type region and the third layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A structure comprising:
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a semiconductor light emitting device comprising an n-type region, a p-type region, and an active region disposed between n-type region and the p-type region, the active region being configured to emit light; and a p-electrode overlying and electrically connected to the p-type region, the p-electrode comprising; a first layer comprising silver; a second layer comprising nickel; and a third layer comprising titanium, wherein the third layer is a dielectric. - View Dependent Claims (10, 11)
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Specification