Process for operating an electronic device including a memory array and conductive lines
First Claim
1. A process for operating an electronic device including a memory array comprising:
- providing the electronic device, wherein the memory array comprises a first memory cell, wherein the first memory cell includes;
a substrate including a trench, wherein;
the trench extends into a semiconductor material;
the trench includes a ledge and a bottom; and
the bottom lies at a depth deeper than the ledge;
a first set of discontinuous storage elements, wherein the first set of the discontinuous storage elements lies within the trench;
a first gate electrode overlying the ledge; and
a second gate electrode overlying the bottom; and
programming a first memory cell using hot carrier injection, wherein a bit line is electrically connected to the first memory cell and electrically floats during programming the first memory cell.
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Accused Products
Abstract
An electronic circuit can include a first memory cell and a second memory cell. In one embodiment, source/drain regions of the first and second memory cells can be electrically connected to each other. The source/drain regions may electrically float regardless of direction in which carriers flow through channel regions of the memory cells. In another embodiment, the first memory cell can be electrically connected to a first gate line, and the second memory cell can be electrically connected to a greater number of gate lines as compared to the first memory cell. In another aspect, the first and second memory cells are connected to the same bit line. Such bit line can electrically float when programming or reading the first memory cell or the second memory cell or any combination thereof.
58 Citations
8 Claims
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1. A process for operating an electronic device including a memory array comprising:
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providing the electronic device, wherein the memory array comprises a first memory cell, wherein the first memory cell includes; a substrate including a trench, wherein; the trench extends into a semiconductor material; the trench includes a ledge and a bottom; and the bottom lies at a depth deeper than the ledge; a first set of discontinuous storage elements, wherein the first set of the discontinuous storage elements lies within the trench; a first gate electrode overlying the ledge; and a second gate electrode overlying the bottom; and programming a first memory cell using hot carrier injection, wherein a bit line is electrically connected to the first memory cell and electrically floats during programming the first memory cell. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification