Simplified optical proximity correction based on 1-dimension versus 2-dimension pattern shape classification
First Claim
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1. A system that facilitates optical proximity correction, comprising:
- a layout that is desirably transferred to a silicon wafer;
a block generator that covers with blocks selected two-dimensional patterns on the layout; and
a model-based optical proximity correction component that alters the layout based at least in part upon a distinction between one-dimensional patterns and two-dimensional patterns within the layout by applying model-based optical proximity correction only upon the one-dimensional patterns hence saving time and computational resources.
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Abstract
A system that facilitates optical proximity correction comprises a layout that is desirably transferred to a silicon wafer, and an optical proximity correction component that alters the layout based at least in part upon a distinction between one-dimensional patterns and two-dimensional patterns within the layout. The system can comprise a block generator that replaces two-dimensional patterns within the layout with blocks. A model-based optical proximity correction component thereafter performs model-based optical proximity correction upon one-dimensional patterns within the layout.
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Citations
24 Claims
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1. A system that facilitates optical proximity correction, comprising:
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a layout that is desirably transferred to a silicon wafer; a block generator that covers with blocks selected two-dimensional patterns on the layout; and a model-based optical proximity correction component that alters the layout based at least in part upon a distinction between one-dimensional patterns and two-dimensional patterns within the layout by applying model-based optical proximity correction only upon the one-dimensional patterns hence saving time and computational resources. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method for generating optical proximity correction data, comprising:
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receiving layout data, the layout data represents a layout that is desirably transferred to a silicon wafer; differentiating between one-dimensional patterns and two-dimensional patterns within the layout; covering patterns classified as two-dimensional with blocks; and generating the optical proximity correction data only for patterns classified as one-dimensional thereby saving time and computational resources. - View Dependent Claims (16, 17, 18, 19, 20)
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21. A system that facilitates performing optical proximity correction upon a mask layout, comprising:
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means for categorizing a plurality of patterns within the mask layout as two-dimensional; means for replacing the patterns categorized as two-dimensional patterns with blocks; and means for applying a model-based optical proximity correction technique upon at least a pattern not categorized as two-dimensional hence saving time and computational resources. - View Dependent Claims (22, 23)
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24. An optical proximity correction system, comprising:
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a layout that comprises a plurality of shapes, the layout desirably patterned onto a silicon wafer; a component that automatically categorizes a portion of a shape within the layout as two-dimensional; a block generator that replaces the portion of the shape categorized as two-dimensional with a block; and a model-based optical proximity correction component that performs model-based optical proximity correction upon a remainder of the shape hence saving time and computational resources.
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Specification