Method of manufacturing light emitting device

• US 7,264,979 B2
• Filed: 02/13/2002
• Issued: 09/04/2007
• Est. Priority Date: 02/19/2001
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takayama, Toru, Yamazaki, Shunpei, Yamagata, Hirokazu
• Primary Examiner(s): FOURSON III, GEORGE R
• Application Number:
  US10/073,284
• Publication Number:
  US 20020113248A1
• Time in Patent Office: 2,029 Days
• Field of Search: 438 22- 47, 438/976, 134/6, 257/E33.059, 257/E33.06
• US Class Current: 438/26
• CPC Class Codes: H10K 50/15 Hole transporting layers
• CPC Class Codes: H10K 50/805 Electrodes
• CPC Class Codes: H10K 50/81 Anodes
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/12 using liquid deposition, e.g. spin coating
• CPC Class Codes: Y10S 438/976 Temporary protective layer

Abstract

A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of the interlayer insulating film on the TFT for surface modification.

Claims

1. A method of manufacturing a device comprising the steps of:

forming a thin film transistor over a substrate having an insulating surface;

forming an interlayer insulating film over the thin film transistor;

forming a wiring over the interlayer insulating film, the wiring being connected to the thin film transistor;

forming a pixel electrode over the interlayer insulating film, the pixel electrode being connected to the wiring;

forming a resin insulating film over the wiring, the pixel electrode, and the interlayer insulating film;

after forming the resin insulating film, forming a protective film over the resin insulating film;

after forming the protective film, moving the substrate over which the thin film transistor is formed from a first processing room to a second processing room;

after moving the substrate, removing the protective film;

after removing the protective film, forming a bank by etching the resin insulating film; and

after forming the bank, forming a light emitting layer over said pixel electrode and the bank,

wherein said steps of removing the protective film, forming the bank, and forming the light emitting layer are performed in said second processing room.

2. A method of manufacturing a device according to claim 1, wherein the pixel electrode is an anode or a cathode.

28. A method of manufacturing a light emitting device according to claim 1, wherein in the step of moving the substrate, the resin insulating film prevents the protective film from contacting with the wiring, the pixel electrode and the interlayer insulating film.

3. A method of manufacturing a device comprising the steps of:

forming a thin film transistor over a substrate having an insulating surface;

forming an interlayer insulating film over the thin film transistor;

forming a wiring over the interlayer insulating film, the wiring being connected to the thin film transistor;

forming a pixel electrode over the interlayer insulating film, the pixel electrode being connected to the wiring;

forming a resin insulating film over the wiring, the pixel electrode and the interlayer insulating film;

after forming the resin insulating film, forming a protective film over the resin insulating film, the protective film preventing the substrate over which the thin film transistor is formed from a contamination and an electrostatic discharge damage; and

after forming the protective film, moving the substrate over which the thin film transistor is formed from a first processing room to a second processing room.

4. A method of manufacturing a device according to claim 3, wherein the protective film preventing the substrate from contamination and electrostatic discharge damage comprises an organic conductive material selected from the group consisting of polyethylene dioxythiophene, polyaniline, glycerin fatty acid ester, polyoxyethylene alkyl ether, N-2-Hydroxyethyl-N-2-hydroxyalkylamine [hydroxyalkylmonoethanolamine], N,N-Bis(2-hydroxyethyl)alkylamine [alkyl diethanolamine], alkyl diethanolamide, polyoxyethylene alkylamine, polyoxyethylene alkylamine fatty acid ester, alkyl sulfonate, alkylbenzenesulfonate, alkyl phosphate, tetraalkylammonium salt, trialkylbenzylammonium salt, alkyl betaine, alkyl imidazolium betaine, and polyoxyethylene alkylphenyl ether.

5. A method of manufacturing a device according to claim 4, wherein the organic conductive material is formed by spin coating or evaporation.

6. A method of manufacturing a device according to claim 3, wherein the protective film preventing the substrate from contamination and electrostatic discharge damage comprises an organic insulating material selected from the group consisting of palyimide, acrylic, polyamide, polyimideamide, and benzocyclobutene.

29. A method of manufacturing a light emitting device according to claim 3, wherein in the step of moving the substrate, the resin insulating film prevents the protective film from contacting with the wiring, the pixel electrode and the interlayer insulating film.

7. A method of manufacturing a light emitting device comprising the steps of:

forming a thin film transistor over a substrate having an insulating surface;

forming an interlayer insulating film over the thin film transistor;

forming a wiring over the interlayer insulating film, the wiring being connected to the thin film transistor;

forming a pixel electrode over the interlayer insulating film, the pixel electrode being connected to the wiring;

forming a resin insulating film over the wiring, the pixel electrode and the interlayer insulating film; and

after forming the resin insulating film, forming a film over the resin insulating film, the film preventing the substrate over which the thin film transistor is formed from a contamination and an electrostatic discharge damage;

after forming the film, moving the substrate over which the thin film transistor is formed from a first processing room to a second processing room,

after moving the substrate, removing the film;

after removing the film, forming a bank by etching the resin insulating film; and

after forming the bank, forming a light emitting layer over said pixel electrode and the bank,

wherein said steps of removing the film, forming the bank, and forming the light emitting layer are performed in said second processing room.

8. A method of manufacturing a light emitting device according to claim 7, wherein the film over the resin insulating film comprises an organic conductive material selected from the group consisting of polyethylene dioxythiophene, polyaniline, glycerin fatty acid ester, polyoxyethylene alkyl ether, N-2-Hydroxyethyl-N-2-hydroxyalkylamine [hydroxyalkyl monoethanolamine], N,N-Bis(2-hydroxyethyl)alkylamine [alkyl diethanolamine], alkyl diethanolamide, polyoxyethylene alkylamine, polyoxyethylene alkylamine fatty acid ester, alkyl sulfonate, alkylbenzenesulfonate, alkyl phosphate, tetraalkylammonium salt, trialkylbenzylammonium salt, alkyl betaine, alkyl imidazolium betaine, and polyoxyethylene alkylphenyl.

9. A method of manufacturing a light emitting device according to claim 7, wherein the film comprises an organic insulating material selected from the group consisting of polyimide, acrylic, polyamide, polyimideamide, and benzocyclobutene.

30. A method of manufacturing a light emitting device according to claim 7, wherein in the step of moving the substrate, the resin insulating film prevents the film over the resin insulating film from contacting with the wiring, the pixel electrode and the interlayer insulating film.

10. A method of manufacturing a light emitting device comprising the steps of:

forming a thin film transistor over a substrate having an insulating surface;

forming an interlayer insulating film over the thin film transistor;

forming a wiring over the interlayer insulating film, the wiring being connected to the thin film transistor;

forming a pixel electrode over the interlayer insulating film, the pixel electrode being connected to the wiring;

forming a resin insulating film over the wiring, the pixel electrode, and the interlayer insulating film;

after forming the resin insulating film, forming a film over the resin insulating film, the film preventing the substrate over which the thin film transistor is formed from a contamination and an electrostatic discharge damage;

after forming the film, moving the substrate over which the thin film transistor is formed from a first processing room to a second processing room;

after moving the substrate, removing the film;

after removing the film, forming a bank by etching the resin insulating film;

baking the bank in a vacuum;

forming an organic compound layer over the bank and the pixel electrode; and

forming an electrode on the organic compound layer.

11. A method of manufacturing a light emitting device according to claim 10, wherein the film over the resin insulating film comprises an organic conductive material selected from the group consisting of polyethylene dioxythiophene, polyaniline, glycerin fatty acid ester, polyoxyethylene alkyl ether, N-2-Hydroxyethyl-N-2-hydroxyalkylamine [hydroxyalkyl monoethanolamine], N,N-Bis(2-hydroxyethyl)alkylamine [alkyl diethanolamine], alkyl dietbanolamide, polyoxyethylene alkylamine, polyoxyethylene alkylamine fatty acid ester, alkyl sulfonate, alkylbenzenesulfonate, alkyl phosphate, tetraalkylammonium salt, trialkylbenzylammonium salt, alkyl betaine, alkyl imidazolium betaine, and polyoxyethylene alkylphenyl.

12. A method of manufacturing a light emitting device according to claim 11, wherein the film over the resin insulating film comprises an organic insulating material selected from the group consisting of polyimide, acrylic, polyamide, polyimideamide, and benzocyclobutene.

31. A method of manufacturing a light emitting device according to claim 10, wherein in the step of moving the substrate, the resin insulating film prevents the film over the resin insulating film from contacting with the wiring, the pixel electrode and the interlayer insulating film.

13. A method of manufacturing a light emitting device comprising the steps of:

forming a thin film transistor over a substrate having an insulating surface;

forming an interlayer insulating film over the thin film transistor;

forming a wiring over the interlayer insulating film, the wiring being connected to the thin film transistor;

forming a pixel electrode over the interlayer insulating film, the pixel electrode being connected to the wiring;

forming a resin insulating film over the wiring, the pixel electrode and the interlayer insulating film;

after forming the resin insulating film forming a film comprising a conductive material over the resin insulating film, the film preventing the substrate over which the thin film transistor is formed from a contamination and an electrostatic discharge damage; and

after forming the film, moving the substrate over which the thin film transistor is formed from a first processing room to a second processing room,

wherein in the step of moving the substrate, the resin insulating film prevents the film from contacting with the wiring, the pixel electrode and the interlayer insulating film.

14. A method of manufacturing a light emitting device according to claim 13, wherein the conductive material is selected from the group consisting of polyethylene dioxythiophene, polyaniline, glycerin fatty acid ester, polyoxyethylene alkyl ether, N-2-Hydroxyethyl-N-2-hydroxyalkylamine [hydroxyalkyl monoethanolamine], N,N-Bis(2-hydroxyethyl)alkylamine [alkyl diethanolamine], alkyl diethanolamide, polyoxyethylene alkylamine, polyoxyethylene alkylamine fatty acid ester, alkyl sulfonate, alkylbenzenesulfonate, alkyl phosphate, tetraalkylammonium salt, trialkylbenzylammonium salt, alkyl betaine, alkyl imidazolium betaine, and polyoxyethylene alkylphenyl.

15. A method of manufacturing a light emitting device comprising the steps of:

forming a thin film transistor over a substrate having an insulating surface;

forming an interlayer insulating film over the thin film transistor;

forming a wiring over the interlayer insulating film, the wiring being connected to the thin film transistor;

forming a pixel electrode over the interlayer insulating film, the pixel electrode being connected to the wiring;

forming a resin insulating film over the wiring, the pixel electrode, and the interlayer insulating film;

after forming the resin insulating film forming a film comprising a conductive material over the resin insulating film, the film preventing the substrate over which the thin film transistor is formed from a contamination and an electrostatic discharge damage; and

after forming the film, moving the substrate over which the thin film transistor is formed from a first processing room to a second processing room.

16. A method of manufacturing a light emitting device according to claim 15, wherein the conductive material is selected from the group consisting of polyethylene dioxythiophene, polyaniline, glycerin fatty acid ester, polyoxyethylene alkyl ether, N-2-Hydroxyethyl-N-2-hydroxyalkylamine [hydroxyalkyl monoethanolamine], N,N-Bis(2-hydroxyethyl)alkylamine [alkyl diethanolamine], alkyl diethanolamide, polyoxyethylene alkylamine, polyoxyethylene alkylamine fatty acid ester, alkyl sulfonate, alkylbenzenesulfonate, alkyl phosphate, tetraalkylammonium salt, trialkylbenzylammonium salt, alkyl betaine, alkyl imidazolium betaine, and polyoxyethylene alkylphenyl.

32. A method of manufacturing a light emitting device according to claim 15, wherein in the step of moving the substrate, the resin insulating film prevents the film comprising the conductive material from contacting with the wiring, the pixel electrode and the interlayer insulating film.

17. A method of manufacturing a light emitting device comprising the steps of:

forming a thin film transistor over a substrate having an insulating surface;

forming an interlayer insulating film over the thin film transistor;

forming a wiring over the interlayer insulating film, the wiring being connected to the thin film transistor;

forming a pixel electrode over the interlayer insulating film, the pixel electrode being connected to the wiring;

forming a resin insulating film over the wiring, the pixel electrode, and the interlayer insulating film;

after forming the resin insulating film, forming a film comprising a conductive material over the resin insulating film, the film preventing the substrate over which the thin film transistor is formed from a contamination and an electrostatic discharge damage;

after forming the film, moving the substrate over which the thin film transistor is formed from a first processing room to a second processing room;

after moving the substrate, removing the film;

after removing the film, forming a bank by etching the resin insulating film;

baking the bank in a vacuum;

forming an organic compound layer over the bank and the pixel electrode; and

forming an electrode on the organic compound layer.

18. A method of manufacturing a light emitting device according to claim 17, wherein the conductive material is selected from the group consisting of polyethylene dioxythiophene, polyaniline, glycerin fatty acid ester, polyoxyethylene alkyl ether, N-2-Hydroxyethyl-N-2-hydroxyalkylamine [hydroxyalkyl monoethanolamine], N,N-Bis(2-hydroxyethyl)alkylamine [alkyl diethanolamine], alkyl diethanolamide, polyoxyethylene alkylamine, polyoxyethylene alkylamine fatty acid ester, alkyl sulfonate, alkylbenzenesulfonate, alkyl phosphate, tetraalkylammonium salt, trialkylbenzylammonium salt, alkyl betaine, alkyl imidazolium betaine, and polyoxyethylene alkylphenyl.

33. A method of manufacturing a light emitting device according to claim 17, wherein in the step of moving the substrate, the resin insulating film prevents the film comprising the conductive material from contacting with the wiring, the pixel electrode and the interlayer insulating film.

19. A method of manufacturing a light emitting device comprising the steps of:

forming a thin film transistor over a substrate having an insulating surface;

forming an interlayer insulating film over the thin film transistor;

forming a wiring over the interlayer insulating film, the wiring being connected to the thin film transistor;

forming a pixel electrode over the interlayer insulating film, the pixel electrode being connected to the wiring;

forming a resin insulating film over the wiring, the pixel electrode, and the interlayer insulating film;

after forming the resin insulating film, forming a film comprising an insulating material over the resin insulating film, the film preventing the substrate over which the thin film transistor is formed from a contamination and an electrostatic discharge damage; and

after forming the film, moving the substrate over which the thin film transistor is formed from a first processing room to a second processing room,

wherein in the step of moving the substrate, the resin insulating film prevents the film from contacting with the wiring, the pixel electrode and the interlayer insulating film.

20. A method of manufacturing a light emitting device according to claim 19, wherein the insulating material is selected from the group consisting of polyimide, acrylic, polyamide, polylmideamide, and benzocyclobutene.

21. A method of manufacturing a light emitting device comprising the steps of:

forming a thin film transistor over a substrate having an insulating surface;

forming an interlayer insulating film over the thin film transistor;

forming a wiring over the interlayer insulating film, the wiring being connected to the thin film transistor;

forming a pixel electrode over the interlayer insulating film, the pixel electrode being connected to the wiring;

forming a resin insulating film over the wiring, the pixel electrode, and the interlayer insulating film;

after forming the resin insulating film, forming a film comprising an insulating material over the resin insulating film, the film preventing the substrate over which the thin film transistor is formed from a contamination and an electrostatic discharge damage; and

after forming the film, moving the substrate over which the thin film transistor is formed from a first processing room to a second processing room.

22. A method of manufacturing a light emitting device according to claim 21, wherein the insulating material is selected from the group consisting of polyimide, acrylic, polyamide, polyimideamide, and benzocyclobutene.

34. A method of manufacturing a light emitting device according to claim 21, wherein in the step of moving the substrate, the resin insulating film prevents the film comprising the insulating material from contacting with the wiring, the pixel electrode and the interlayer insulating film.

23. A method of manufacturing a light emitting device comprising the steps of:

forming a thin film transistor over a substrate having an insulating surface;

forming an interlayer insulating film over the thin film transistor;

forming a wiring over the interlayer insulating film, the wiring being connected to the thin film transistor;

forming a pixel electrode over the interlayer insulating film, the pixel electrode being connected to the wiring;

forming a resin insulating film over the wiring, the pixel electrode, and the interlayer insulating film;

after forming the resin insulating film, forming a film comprising an insulating material over the resin insulating film, the film preventing the substrate over which the thin film transistor is formed from a contamination and an electrostatic discharge damage;

after forming the film, moving the substrate over which the thin film transistor is formed from a first processing room to a second processing room;

after moving the substrate, removing the film;

after removing the film, forming a bank by etching the resin insulating film;

baking the bank in a vacuum;

forming an organic compound layer over the bank and the pixel electrode; and

forming an electrode on the organic compound layer.

24. A method of manufacturing a light emitting device according to claim 23, wherein the insulating material is selected from the group consisting of polyimide, acrylic, polyamide, polyimideamide, and benzocyclobutene.

35. A method of manufacturing a light emitting device according to claim 23, wherein in the step of moving the substrate, the resin insulating film prevents the film comprising the insulating material from contacting with the wiring, the pixel electrode and the interlayer insulating film.

25. A method of manufacturing a light emitting device comprising the steps of:

forming a thin film transistor over a substrate having an insulating surface;

forming an interlayer insulating film over the thin film transistor;

performing plasma treatment on a surface of the interlayer insulating film;

forming a contact hole in the interlayer insulating film after performing the plasma treatment;

forming a wiring over the interlayer insulating film, the wiring being connected to the thin film transistor;

forming a pixel electrode over the interlayer insulating film, the pixel electrode being connected to the wiring;

forming a resin insulating film over the wiring, the pixel electrode, and the interlayer insulating film;

after forming the resin insulating film, forming a film over the resin insulating film, the film preventing the substrate over which the thin film transistor is formed from a contamination and an electrostatic discharge damage; and

after forming the film, moving the substrate over which the thin film transistor is formed from a first processing room to a second processing room.

26. A method of manufacturing a light emitting device according to claim 25, wherein the film over the resin insulating film comprises an organic conductive material selected from the group consisting of polyethylene dioxythiophene, polyaniline, glycerin fatty acid ester, polyoxyethylene alkyl ether, N-2-Hydroxyethyl-N-2-hydroxyalkylamine [hydroxyalkyl monoethanolamine], N,N-Bis(2-Hydroxyethyl)alkylamine [alkyl diethanolamine], alkyl dietbanolamide, polyoxyethylene alkylamine, polyoxyethylene alkylamine fatty acid ester, alkyl sulfonate, alkylbenzenesulfonate, alkyl phosphate, tetraalkylammonium salt, trialkylbenzylammonium salt, alkyl betaine, alkyl imidazolium betaine, and polyoxyethylene alkylphenyl.

27. A method of manufacturing a light emitting device according to claim 25, wherein the film over the resin insulating film comprises an organic insulating material selected from the group consisting of polyinilde, acrylic, polyamide, polyimideamide, and benzocyclobutene.

36. A method of manufacturing a light emitting device according to claim 25, wherein in the step of moving the substrate, the resin insulating film prevents the film over the resin insulating film from contacting with the wiring, the pixel electrode and the interlayer insulating film.