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Method of forming a transistor having a dual layer dielectric

  • US 7,265,003 B2
  • Filed: 10/22/2004
  • Issued: 09/04/2007
  • Est. Priority Date: 10/22/2004
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • forming a channel layer over at least a portion of a substrate, wherein said channel layer substantially comprises zinc indium oxide;

    depositing a first material over at least a portion of a substrate by use of one or more low temperature processes to form a first portion of a dielectric layer, at least a portion of said first portion of the dielectric layer comprising inorganic dielectric material;

    depositing a second material over and/or in contact with said first portion of the dielectric layer by use of one or more solution processes to form a second portion of the dielectric layer, at least a portion of said second portion of the dielectric layer comprising organic dielectric material, such as to form at least a portion of a thin film transistor (TFT).

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