Method for forming a multi-layer seed layer for improved Cu ECP
First Claim
1. A method for forming a copper damascene comprising the steps of:
- providing a substrate comprising a semiconductor substrate;
forming an insulator layer on the substrate;
forming a damascene opening through a thickness portion of the insulator layer;
forming a diffusion barrier layer to line the damascene opening;
then forming a first seed layer on the diffusion barrier;
then plasma treating the first seed layer in-situ with a first treatment plasma, said first treatment plasma formed from plasma source gases selected from the group consisting of argon, nitrogen, hydrogen, and NH3;
then forming a second seed layer on the first seed layer;
forming a copper layer overlying the second seed layer according to an electro-chemical plating (ECP) process to fill the damascene opening; and
,planarizing the copper layer to form a metal interconnect structure.
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Accused Products
Abstract
A copper filled damascene structure and method for forming the same the method including providing a substrate comprising a semiconductor substrate; forming an insulator layer on the substrate; forming a damascene opening through a thickness portion of the insulator layer; forming a diffusion barrier layer to line the damascene opening; forming a first seed layer overlying the diffusion barrier; plasma treating the first seed layer in-situ with a first treatment plasma comprising plasma source gases selected from the group consisting of argon, nitrogen, hydrogen, and NH3; forming a second seed layer overlying the first seed layer; forming a copper layer overlying the second seed layer according to an electro-chemical plating (ECP) process to fill the damascene opening; and, planarizing the copper layer to form a metal interconnect structure.
31 Citations
40 Claims
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1. A method for forming a copper damascene comprising the steps of:
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providing a substrate comprising a semiconductor substrate; forming an insulator layer on the substrate; forming a damascene opening through a thickness portion of the insulator layer; forming a diffusion barrier layer to line the damascene opening; then forming a first seed layer on the diffusion barrier; then plasma treating the first seed layer in-situ with a first treatment plasma, said first treatment plasma formed from plasma source gases selected from the group consisting of argon, nitrogen, hydrogen, and NH3; then forming a second seed layer on the first seed layer; forming a copper layer overlying the second seed layer according to an electro-chemical plating (ECP) process to fill the damascene opening; and
,planarizing the copper layer to form a metal interconnect structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method for forming a copper damascene comprising the steps of:
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providing a substrate comprising a semiconductor substrate and metal interconnect structures; forming a low-K dielectric insulator layer on the substrate; forming a damascene opening through a thickness portion of the low-K dielectric insulator layer; forming a diffusion barrier layer to line the damascene opening; then forming a first seed layer over the diffusion barrier layer; then plasma treating the first seed layer with a first treatment plasma, said first treatment plasma formed from plasma source gases selected from the group consisting of argon, nitrogen, hydrogen, and NH3; then forming a second seed layer on the first seed layer; then plasma treating the second seed layer with a second treatment plasma, said second treatment plasma formed from plasma source gases selected from the group consisting of argon, nitrogen, hydrogen, and NH3; forming a copper layer over the second seed layer according to an electro-chemical plating (ECP) process to fill the damascene opening; and
,planarizing the copper layer to form a metal interconnect structure. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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34. A method for forming a copper damascene seed layer with improved seed layer step coverage to reduce void formation during ECP comprising the steps of:
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providing a damascene opening formed in a porous insulating substrate; forming a diffusion barrier layer to line the damascene opening; then forming a first seed layer on the diffusion barrier; then plasma treating the first seed layer in-situ with a first treatment plasma without depositing a material layer, said first treatment plasma formed from plasma source gases selected from the group consisting of argon, nitrogen, hydrogen, and NH3; then forming a second seed layer on the first seed layer; then plasma treating the second seed layer in-situ with a second treatment plasma without depositing a material layer, said second treatment plasma formed from plasma source gases selected from the group consisting of argon, nitrogen, hydrogen, and NH3; and
,depositing a copper layer on the second seed layer according to ECP to fill the damascene opening. - View Dependent Claims (35, 36, 37, 38, 39, 40)
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Specification