Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties
First Claim
1. A method of preparing a porous low-k dielectric layer on a substrate, the method comprising:
- (a) forming a precursor film on the substrate, the precursor film comprising a porogen and a structure former;
(b) removing the porogen from the precursor film to thereby create voids within the dielectric material and form the porous low-k dielectric layer; and
(c) exposing the dielectric material to ultraviolet radiation in a manner that increases the mechanical strength of the porous low-k dielectric layer;
wherein the ultraviolet radiation in (c) has an intensity of between about 2230 W/cm2 and 3118 W/cm2 and (c) occurs for a time period time period between about 1 and 200 seconds.
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Abstract
Methods and apparatus for preparing a porous low-k dielectric material on a substrate are provided. The methods optionally involve the use of ultraviolet radiation to react with and remove porogen from a porogen containing precursor film leaving a porous dielectric matrix and further exposing the dielectric matrix to ultraviolet radiation to increase the mechanical strength of the dielectric matrix. Some methods involve activating a gas to create reactive gas species that can clean a reaction chamber. One disclosed apparatus includes an array of multiple ultraviolet sources that can be controlled such that different wavelengths of light can be used to irradiate a sample at a time.
550 Citations
38 Claims
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1. A method of preparing a porous low-k dielectric layer on a substrate, the method comprising:
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(a) forming a precursor film on the substrate, the precursor film comprising a porogen and a structure former; (b) removing the porogen from the precursor film to thereby create voids within the dielectric material and form the porous low-k dielectric layer; and (c) exposing the dielectric material to ultraviolet radiation in a manner that increases the mechanical strength of the porous low-k dielectric layer;
wherein the ultraviolet radiation in (c) has an intensity of between about 2230 W/cm2 and 3118 W/cm2 and (c) occurs for a time period time period between about 1 and 200 seconds. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A method of preparing a porous low-k dielectric layer on a substrate, the method comprising:
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(a) providing in a reaction chamber a substrate having a precursor film comprising a porogen and a structure former; (b) exposing the porogen from the precursor film to ultraviolet radiation of a first wavelength distribution to thereby create voids within the dielectric material and form the porous low-k dielectric layer; (c) exposing the dielectric material to ultraviolet radiation of a second wavelength distribution to increase the mechanical strength of the porous low-k dielectric layer; and (d) activating a gas by exposure to ultraviolet radiation of a third wavelength distribution to produce a species that cleans porogen residue from surfaces within the reaction chamber. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37, 38)
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Specification