Opto-electronic memory element on the basis of organic metalloporphyrin molecules

• US 7,265,381 B2
• Filed: 12/30/2004
• Issued: 09/04/2007
• Est. Priority Date: 12/30/2004
• Status: Expired due to Fees

• Current Assignee: Polaris Innovations Limited (Wi-LAN Inc.)
• Original Assignee: Infineon Technologies AG
• Inventors: Ufert, Klaus
• Primary Examiner(s): Booth; Richard A.
• Application Number:
  US11/024,932
• Publication Number:
  US 20060145181A1
• Time in Patent Office: 978 Days
• Field of Search: 257/43, 257/448, 257/E21.645, 438/104
• US Class Current: 257/43
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G11C 13/0014 comprising cells based on organic memory material
• CPC Class Codes: G11C 13/0016 comprising polymers
• CPC Class Codes: G11C 13/047 using electro-optical elements G11C13/042 takes precedence
• CPC Class Codes: H10K 85/30 Coordination compounds

Abstract

A memory cell for opto-electronic applications includes a substrate, a first electrode and a second electrode, and an active layer arranged between the first and the second electrodes, wherein the active layer includes a metalloporphyrin derivative, and wherein the second electrode is transparent and includes ZnO, which is doped with B, Al, Ga, or Mg.

Claims

1. A memory cell for opto-electronic applications, comprising:

a substrate;

a first electrode and a second electrode; and

an active layer disposed between the first and the second electrodes, wherein the active layer includes a Zn-porphyrin derivative, and wherein the second electrode is transparent and comprises ZnO doped with one of the elements selected from the group consisting of boron, aluminum, gallium, and magnesium;

wherein the memory cell is disposed in a memory element comprising a memory cell field, and the memory cell field is formed as a cross point array.

2. The memory cell according to claim 1, wherein the dopant concentration is in the range of about 1-1.5 Atom %.

3. The memory cell according to claim 1, wherein the substrate comprises a polymer.

4. The memory cell according to claim 1, wherein the first electrode comprises polysilicon, Si/SiO2 or Au.

5. The memory cell according to claim 1, wherein the memory cell is arranged in a memory element comprising a memory cell field, and the memory cell is in the via contact hole between the first and second electrodes.

6. The memory cell according to claim 1, wherein the second transparent electrode is deposited by an MOCVD method.

7. The memory cell according to claim 6, wherein a precursor for zinc used in the MOCVD-process is diethyl zinc, which is used in the presence of H₂O.

8. The memory cell according to claim 1, whereas diboran is used as a boron source during the manufacturing of the second transparent electrode.

9. The memory cell according to claim 1, wherein trimethylaluminum is used as an aluminum source during the manufacturing of the second transparent electrode.

10. The memory cell according to claim 1, wherein trimethyl gallium is used as a gallium source during the manufacturing of the second transparent electrode.

11. The memory cell according to claim 6, wherein the MOCVD procedure is carried out at a pressure of about 0.5 mbar.

12. The memory cell according to claim 6, wherein the MOCVD procedure is carried out at a temperature of about 180°

C.

13. The memory cell according to claim 1, wherein the cell is manufactured by a roll-to-roll procedure.

14. A memory cell for opto-electronic applications, comprising:

a substrate;

a first electrode and a second electrode; and

an active layer disposed between the first and the second electrodes, wherein the active layer includes a Zn-porphyrin derivative, and wherein the second electrode is transparent and comprises ZnO doped with one of the elements selected from the group consisting of boron, aluminum, gallium, and magnesium;

wherein the memory cell is arranged in a memory element comprising a memory cell field, and the memory cell is in the via contact hole between the first and second electrodes.