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Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same

  • US 7,265,392 B2
  • Filed: 05/28/2001
  • Issued: 09/04/2007
  • Est. Priority Date: 05/26/2000
  • Status: Expired due to Term
First Claim
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1. A light-emitting diode chip comprisinga GaN-based, radiation-emitting epitaxial layer sequence comprising an active region, an n-doped layer and a p-doped layer, anda reflective contact metallization assigned to said p-doped layer and comprising:

  • a radiation permeable contact layer and a reflective layer, andin which said radiation permeable contact layer is arranged between said p-doped layer and said reflective layer,wherein said contact layer is a non-closed layer particularly having an island-like or a net-like structure or a combination thereof, andwherein said reflective layer covers more than 50% of the main surface of said p-doped layer facing away from said active region.

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