Capacitor with conducting nanostructure

• US 7,265,406 B2
• Filed: 05/09/2005
• Issued: 09/04/2007
• Est. Priority Date: 09/20/2002
• Status: Expired due to Fees

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Kim, Sarah E., Kellar, Scot A.
• Primary Examiner(s): Smith; Zandra V.
• Assistant Examiner(s): Perkins; Pamela E
• Application Number:
  US11/125,567
• Publication Number:
  US 20050194628A1
• Time in Patent Office: 848 Days
• Field of Search: 257/296, 257/306, 257/309, 257/313, 438/396, 438/399, 977/1
• US Class Current: 257/309
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G11C 13/0033 Disturbance prevention or evaluation; Refreshing of disturbed memory data
• CPC Class Codes: G11C 13/025 using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
• CPC Class Codes: G11C 2213/16 Memory cell being a nanotube, e.g. suspended nanotube
• CPC Class Codes: G11C 2213/81 Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
• CPC Class Codes: H01G 4/008 Selection of materials
• CPC Class Codes: H01G 4/33 Thin- or thick-film capacitors thin- or thick-film circuits H01L27/00; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor H01L28/40
• CPC Class Codes: H01L 27/0805 Capacitors only
• CPC Class Codes: H01L 28/84 being a rough surface, e.g. using hemispherical grains
• CPC Class Codes: H10B 12/03 Making the capacitor or connections thereto
• CPC Class Codes: Y10S 977/70 Nanostructure
• CPC Class Codes: Y10S 977/72 On an electrically conducting, semi-conducting, or semi-insulating substrate
• CPC Class Codes: Y10S 977/721 On a silicon substrate
• CPC Class Codes: Y10S 977/723 On an electrically insulating substrate
• CPC Class Codes: Y10S 977/902 Specified use of nanostructure
• CPC Class Codes: Y10S 977/963 Miscellaneous
• CPC Class Codes: Y10T 428/24802 Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Abstract

The present invention discloses a method including providing a substrate; forming a lower conductor over the substrate; forming a conducting nanostructure over the lower conductor; forming a thin dielectric over the conducting nanostructure; and forming an upper conductor over the thin dielectric. The present invention further discloses a device including a substrate; a lower conductor located over the substrate; a conducting nanostructure located over the lower conductor; a thin dielectric located over the conducting nanostructure; and an upper conductor located over the thin dielectric.

Claims

1. A device comprising:

a substrate;

a lower insulator disposed over said substrate;

a lower conductor disposed over said lower insulator;

a conducting nanostructure disposed over said lower conductor, said conducting nanostructure being part of a discontinuous layer over said lower conductor, said conducting nanostructure being part of a highly regular, systematic array;

a thin dielectric disposed over said conducting nanostructure;

an upper conductor disposed over said thin dielectric; and

an upper insulator disposed over said upper conductor.

2. The device of claim 1 wherein said thin dielectric comprises an insulating nanostructure.

3. The device of claim 2 wherein said conducting nanostructure and said insulating nanostructure are attached in a nanochain.

4. The device of claim 3 wherein said nanochain is oriented such that the end with said conducting nanostructure is attached to said lower conductor while the end with said insulating nanostructure is attached to said upper conductor.

5. The device of claim 1 wherein said thin dielectric comprises a high k value material.

6. The device of claim 1 wherein said conducting nanostructure comprises a Carbon nanotube.

7. The device of claim 1 wherein said upper conductor comprises a material that forms a conductive oxide.

8. The device of claim 1 wherein said thin dielectric is thick enough to keep an electric field below a breakdown limit.

9. The device of claim 1 wherein said thin dielectric comprises a binary ceramic oxide.

10. The device of claim 1 wherein said thin dielectric comprises quaternary Silicates.

11. The device of claim 1 wherein said thin dielectric comprises quaternary Aluminates.

12. The device of claim 1 wherein said thin dielectric comprises a material with a Perovskite structure.

13. The device of claim 1 wherein said conducting nanostructure comprises a hemispherical shape.

14. The device of claim 1 wherein said conducting nanostructure comprises a solid core.

15. The device of claim 1 wherein said conducting nanostructure comprises a hollow core.

16. The device of claim 1 wherein said nanostructure comprises a segmented nanochain that alternates between portions with a larger cross-section resembling globules and other portions with a smaller cross-section resembling stems.

17. The device of claim 1 wherein said lower insulator and said upper insulator comprise different insulating materials.

18. The device of claim 1 wherein said lower conductor and said upper conductor comprise conducting materials.