Insulated-gate field-effect thin film transistors
First Claim
1. A semiconductor thin film Gated-FET device, comprising:
- a semiconductor thin film layer positioned on a first insulator, said first insulator adequately thick to minimize or eliminate any influence of voltages from below; and
a channel region formed in a fairly uniformly doped portion of said semiconductor thin film layer, the thickness of the channel comprising the entire thin film thickness; and
a gate terminal coupled to a single gate region formed above said channel region, said gate region formed on a gate material deposited over a gate insulator layer, said gate insulator layer further deposited over the semiconductor thin film layer;
wherein;
a first voltage level at the gate fully depletes all of the majority carriers from the entire thin film layer in said channel region to create a non-conductive channel; and
a second voltage level at the gate accumulates the majority carriers near the gate surface of the thin film layer in said channel region to create a conductive channel.
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Accused Products
Abstract
A new Insulated-Gate Field-Effect Thin Film Transistor (Gated-FET) is disclosed. A semiconductor thin film Gated-FET device, comprising: a lightly doped resistive channel region formed on a semiconductor thin film layer, the thickness of the channel comprising the entire thin film thickness; and an insulator layer deposited on said channel surface with a gate region formed on a gate material deposited on said insulator layer, said gate region receiving a gate voltage comprised of: a first level that modulate said channel resistance to a substantially non-conductive state by fully depleting majority carriers from said thin film layer in the channel region; and a second level that modulate said channel resistance to a substantially conductive state by at least partially accumulating majority carriers near the gate surface of the thin film layer in said channel region.
244 Citations
20 Claims
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1. A semiconductor thin film Gated-FET device, comprising:
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a semiconductor thin film layer positioned on a first insulator, said first insulator adequately thick to minimize or eliminate any influence of voltages from below; and a channel region formed in a fairly uniformly doped portion of said semiconductor thin film layer, the thickness of the channel comprising the entire thin film thickness; and a gate terminal coupled to a single gate region formed above said channel region, said gate region formed on a gate material deposited over a gate insulator layer, said gate insulator layer further deposited over the semiconductor thin film layer;
wherein;a first voltage level at the gate fully depletes all of the majority carriers from the entire thin film layer in said channel region to create a non-conductive channel; and a second voltage level at the gate accumulates the majority carriers near the gate surface of the thin film layer in said channel region to create a conductive channel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A three terminal semiconductor thin film Gated-FET device, comprising:
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a semiconductor thin film layer positioned on an insulator, said insulator adequately thick to minimize or eliminate any influence of electrodes from below the insulator; and a source terminal coupled to a source region and a drain terminal coupled to a drain region, said source and drain regions heavily doped with a first dopant type, a uniformly doped channel region positioned in between said source and drain regions comprising a lower doping level of the first dopant type, said source, drain and channel regions formed in the thin film layer, said channel thickness comprising the entire thin film thickness; and a gate terminal coupled to a gate region, said gate region formed above the channel region on a gate material deposited over a gate insulator layer deposited on the thin film layer, wherein; a first voltage level at the gate terminal fully depletes all of the majority carriers from the entire thin film layer in said channel region to create a non-conductive channel; and a second voltage level at the gate terminal accumulates majority carriers near the gate surface of the thin film layer in said channel region to create a conductive channel. - View Dependent Claims (17, 18, 19)
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20. A semiconductor thin film Gated-FET device, comprising:
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a lightly doped resistive channel region formed on a semiconductor thin film layer, the thickness of the channel comprising the entire thin film thickness; and an insulator layer deposited on said channel surface with a gate region formed on a gate material deposited on said insulator layer, said gate region receiving a gate voltage comprised of; a first level that modulate said channel resistance to a substantially non-conductive state by fully depleting majority carriers from said thin film layer in the channel region; and a second level that modulate said channel resistance to a substantially conductive state by at least partially accumulating majority carriers near the gate surface of the thin film layer in said channel region.
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Specification