Semiconductor device, magnetic sensor, and magnetic sensor unit

• US 7,265,430 B2
• Filed: 04/28/2006
• Issued: 09/04/2007
• Est. Priority Date: 03/24/2004
• Status: Active Grant

• Current Assignee: Yamaha Corporation
• Original Assignee: Yamaha Corporation
• Inventors: Sato, Hideki, Naito, Hiroshi
• Primary Examiner(s): Tran; Minhloan
• Assistant Examiner(s): Rodela; Eduardo A.
• Application Number:
  US11/412,923
• Publication Number:
  US 20060197168A1
• Time in Patent Office: 494 Days
• Field of Search: 324/252, 257/421
• US Class Current: 257/421
• CPC Class Codes: G01R 33/02 Measuring direction or magnitude of magnetic fields or magnetic flux G01R33/20 takes precedence
• CPC Class Codes: G01R 33/07 Hall effect devices
• CPC Class Codes: G01R 33/09 Magnetoresistive devices
• CPC Class Codes: H01L 2224/02 Bonding areas; Manufacturing methods related thereto
• CPC Class Codes: H01L 2224/02377 Fan-in arrangement
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05008 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body, e.g.
• CPC Class Codes: H01L 2224/05024 the internal layer being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05026 the internal layer being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05171 Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/0615 Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
• CPC Class Codes: H01L 2224/1134 Stud bumping, i.e. using a wire-bonding apparatus
• CPC Class Codes: H01L 2224/1308 being stacked
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/1403 Bump connectors having different sizes, e.g. different diameters, heights or widths
• CPC Class Codes: H01L 2224/14051 : Bump connectors having different shapes
• CPC Class Codes: H01L 2224/16145 : the bodies being stacked
• CPC Class Codes: H01L 23/3114 : the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 24/02 : Bonding areas on insulating substrates, e.g. chip carriers, H01L23/49816, H01L23/49838, H01L23/5389; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/06 : of a plurality of bonding areas
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/14 : of a plurality of bump connectors
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0001 : Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00013 : Fully indexed content
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15151 : the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/15159 : Side view
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 : Encapsulation

Abstract

A semiconductor device, comprising a semiconductor chip; a pad electrode; an electrode portion; a wiring portion. An insulating portion is formed from electrically insulating material, covering the surface of the semiconductor chip and sealing the sensor element, wiring portion and electrode portion, in a state which exposes at least the electrode portion on the surface of the semiconductor chip. The electrode portion is placed in a position which does not overlap with the sensor element in the thickness direction of the semiconductor chip.

Claims

1. A semiconductor device, comprising:

a semiconductor chip, on the surface of which are formed integrated circuitry and four or more sensor elements, electrically connected thereto;

a pad electrode, formed on the surface side of said semiconductor chip, and electrically connected to at least said integrated circuitry;

an electrode portion, positioned on the surface side of said semiconductor chip adapted for electrically connecting said semiconductor chip to external circuitry;

a wiring portion, electrically connecting said pad electrode to said electrode portion; and

,

an insulating portion, formed from electrically insulating material, which covers the surface of said semiconductor chip and seals said sensor elements, wiring portion, and electrode portion, in a state which exposes, at least, said electrode portion on the surface side of said semiconductor chip;

and wherein

said electrode portion is placed in a position which does not overlap with said sensor elements in the thickness direction of said semiconductor chip and said four sensor elements are arranged so that each is parallel to a respective side of the semiconductor device.

2. The semiconductor device according to claim 1, wherein said wiring portion is placed in a position which does not overlap with said sensor element in the thickness direction of said semiconductor chip.

4. The semiconductor device according to claim 1, wherein a plurality of said sensor elements and a plurality of said electrode portions are provided, and the positional relationship between each of the sensor elements and said electrode portions placed in the environs surrounding the sensor element, as well as the number of said electrode portions placed in the environs surrounding each sensor element, are the same for all of said sensor elements.

5. The semiconductor device according to claim 1, wherein one electrode portion placed in a position adjacent to said sensor element is formed to be small compared with other electrode portions placed at a further distance from the sensor element than the one electrode portion.

3. A semiconductor device, comprising:

a semiconductor chip, on the surface of which are formed integrated circuitry a sensor element, electrically connected thereto;

a pad electrode, formed on the surface side of said semiconductor chip, and electrically connected to at least said integrated circuitry;

an electrode portion, positioned on the surface side of said semiconductor chip adapted for electrically connecting said semiconductor chip to external circuitry;

a wiring portion, electrically connecting said pad electrode to said electrode portion;

an insulating portion, formed from electrically insulating material, which covers the surface of said semiconductor chip and seals said sensor elements, wiring portion, and electrode portion, in a state which exposes, at least, said electrode portion on the surface side of said semiconductor chip;

and wherein

said electrode portion is placed in a position which does not overlap with said sensor elements in the thickness direction of said semiconductor chip, wherein

a plurality of said electrode portions are provided;

a plurality of first lattice lines are supposed, extending in one direction on said surface of said semiconductor chip, arranged at substantially equal intervals so as to substantially equally divide a region of the surface located between an outermost two of the first lattice lines, and a plurality of second lattice lines are supposed, along said surface and intersecting with said first lattice lines, arranged at substantially equal intervals;

each of the points of intersection of the first lattice lines and the second lattice lines are taken to be virtual placement positions for said electrode portions;

among said electrode portions, one electrode portion which does not overlap with said sensor element in said thickness direction is placed in said virtual placement position;

the other electrode portions among said electrode portions are placed in positions shifted, from said virtual placement positions, in a direction away from said sensor element along first lattice lines or along second lattice lines; and

,

on said first lattice lines or on said second lattice lines, the number of electrode portions placed between adjacent lattice lines is one or less.

6. A semiconductor device, comprising:

a semiconductor chip, on the surface of which are formed integrated circuitry and a sensor element, electrically connected thereto;

a pad electrode, formed on the surface side of said semiconductor chip, and electrically connected to at least said integrated circuitry;

a plurality of electrode portions, positioned on the surface side of said semiconductor chip said electrode portions adapted for electrically connecting said semiconductor chip to external circuitry;

a wiring portion, electrically connecting said pad electrode to said electrode portions; and

,

an insulating portion, formed from electrically insulating material, which covers the surface of said semiconductor chip and seals said sensor element, wiring portion, and electrode portions, in a state which exposes, at least, said electrode portions on the surface side of said semiconductor chip;

and wherein

said electrode portions comprise protruding portions which protrude from said insulating portion in the thickness direction of said semiconductor chip; and

,

one protruding portion placed adjacently to said sensor element has a smaller protrusion length from said insulating portion compared with other protruding portions placed at a distance from said sensor element.

7. A semiconductor device, comprising:

a semiconductor chip, on the surface of which are formed integrated circuitry and a sensor element, electrically connected thereto;

a pad electrode, formed on the surface side of said semiconductor chip, and electrically connected to at least said integrated circuitry;

a plurality of electrode portions, positioned on the surface side of said semiconductor chip said plurality of electrode portions adapted for electrically connecting said semiconductor chip to external circuitry;

a wiring portion, electrically connecting said pad electrode to said electrode portions; and

,

an insulating portion, formed from electrically insulating material, which covers the surface of said semiconductor chip and seals said sensor element, wiring portion, and electrode portions, in a state which exposes, at least, said electrode portions on the surface side of said semiconductor chip;

and wherein

said electrode portions comprise protruding portions which protrude from said insulating portion in the thickness direction of said semiconductor chip; and

,

one protruding portion placed adjacently to said sensor element is formed from conductive material with a lower melting point compared with other protruding portions placed at a distance from said sensor element.

8. A semiconductor device, comprising:

a semiconductor chip, on the surface of which are formed integrated circuitry and a sensor element, electrically connected thereto;

a pad electrode, formed on the surface side of said semiconductor chip, and electrically connected to at least said integrated circuitry;

a plurality of electrode portions, positioned on the surface side of said semiconductor chip said electrode portions adapted for electrically connecting said semiconductor chip to external circuitry;

a wiring portion, electrically connecting said pad electrode to said electrode portions; and

,

an insulating portion, formed from electrically insulating material, which covers the surface of said semiconductor chip and seals said sensor element, wiring portion, and electrode portions, in a state which exposes, at least, said electrode portions on the surface side of said semiconductor chip;

and wherein

said electrode portions comprise protruding portions which protrude from said insulating portion in the thickness direction of said semiconductor chip;

said protruding portions comprise a substantially spherical core formed from a conductive material and a shell portion, covering the periphery of the core, and formed from a conductive material with a melting point lower than the melting point of said conductive material; and

,

the core of one protruding portion placed adjacent to said sensor element is formed to be smaller than the cores of other protruding portions placed at a distance from said sensor element, and moreover diameters of the shell portions of said one protruding portion and of said other protruding portions are substantially equal.

9. A semiconductor device, comprising:

a semiconductor chip, on the surface of which are formed integrated circuitry and four or more sensor elements, electrically connected thereto;

a pad electrode, formed on the surface side of said semiconductor chip, and electrically connected to at least said integrated circuitry;

an electrode portion, positioned on the surface side of said semiconductor chip adapted for electrically connecting said semiconductor chip to external circuitry;

a wiring portion, electrically connecting said pad electrode to said electrode portion; and

an insulating portion, formed from electrically insulating material, which covers the surface of said semiconductor chip and seals said sensor elements, wiring portion, and electrode portion, in a state which exposes, at least, said electrode portion on the surface side of said semiconductor chip;

wherein

said electrode portion is placed in a position which does not overlap with said sensor elements in the thickness direction of said semiconductor chip and said for sensor elements are arranged so that each is parallel to a respective side of the semiconductor device; and

the electrode portion includes a solder ball protruding from the surface of the insulating portion, and the figures of the electrode portion projected onto a plane the normal to which is the mounting direction or the loading direction does not overlap the figures of the sensor element projected onto the same plane.