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Capping of metal interconnects in integrated circuit electronic devices

  • US 7,268,074 B2
  • Filed: 06/14/2004
  • Issued: 09/11/2007
  • Est. Priority Date: 06/14/2004
  • Status: Active Grant
First Claim
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1. A method for forming a multilayer metal cap over a metal-filled interconnect feature in a dielectric layer for incorporation into a multilayer integrated circuit device comprising:

  • depositing a first metal cap layer having a thickness between about 100 and about 300 angstroms over the metal-filled interconnect feature in a first deposition process which constitutes electroless metal deposition from a first electroless solution comprising a source of Co ions and a reducing agent;

    depositing a second metal cap layer over the first metal cap layer in a second deposition process which constitutes electroless metal deposition from a second electroless solution which comprises a source of Ni ions and a reducing agent to thereby form the multilayer metal cap as a permanent component distinct from the metal-filled interconnect feature.

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