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Light extraction from a semiconductor light emitting device via chip shaping

  • US 7,268,371 B2
  • Filed: 09/19/2005
  • Issued: 09/11/2007
  • Est. Priority Date: 06/03/1997
  • Status: Expired due to Term
First Claim
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1. A light-emitting diode structure comprising:

  • a multi-layer heterostructure, including a window portion and an active layer for generating light, said multi-layer heterostructure having a flat surface for emitting light, said window portion being transparent and having at least portions of one or more sides of said window portion at an oblique angle with respect to said flat surface, wherein said oblique angle is selected to increase the amount of light escaping from said sides of said window portion,wherein an inner angle of each angled side of the window portion with respect to the active layer is between 40-70 degrees,wherein a thickness of the window portion is greater than 50 microns,wherein the active layer is supported on a first surface of the window portion, the active layer emitting light from one surface into the window portion and emitting light from another surface away from the window portion, at least some light emitted away from the window portion being reflected back in an opposite direction,wherein said at least portions of one or more sides of said window portion extend outward as said window portion approaches said active layer,wherein at least some light emitted by the active layer in a direction perpendicular to the active layer impinges on the angled sides of the window portion, andwherein an ohmic contact electrically connects to the active layer, and wherein the ohmic contact comprises a reflector for reflecting light emitted from the active layer out of the light-emitting diode structure.

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