Vertical GaN light emitting diode and method for manufacturing the same

• US 7,268,372 B2
• Filed: 06/24/2003
• Issued: 09/11/2007
• Est. Priority Date: 12/27/2002
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Hahm, Hun Joo, Park, Young Ho, Na, J ong Seok, Yoo, Seung Jin
• Primary Examiner(s): Lewis; Monica
• Application Number:
  US10/601,597
• Publication Number:
  US 20050173692A1
• Time in Patent Office: 1,540 Days
• Field of Search: 257/13, 257 79-103, 257/918
• US Class Current: 257/103
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

Disclosed are a vertical GaN light emitting diode and a method for manufacturing the same. The vertical GaN light emitting diode comprises a first conductive GaN clad layer with an upper surface provided with a first contact formed thereon, an active layer formed on a lower surface of the first conductive GaN clad layer, a second conductive GaN clad layer formed on a lower surface of the active layer, a conductive adhesive layer formed on the second conductive GaN clad layer, and a conductive substrate, with a lower surface provided with a second contact formed thereon, formed on a lower surface of the conductive adhesive layer. The method for manufacturing the vertical GaN light emitting diodes comprises the step of removing the sapphire substrate from the light emitting structure so as to prevent the damages on a GaN single crystal plane of the structure.

Claims

1. A GaN light emitting diode, comprising:

a first conductive GaN clad layer which is a GaN crystalline layer doped with an n-type impurity;

a first contact formed on and in direct contact with an upper surface of the first conductive GaN clad layer;

an active layer formed on a lower surface of the first conductive GaN clad layer;

a second conductive GaN clad layer formed on a lower surface of the active layer, wherein the second conductive GaN clad layer is a GaN crystalline layer doped with a p-type impurity;

a conductive adhesive layer formed below the second conductive GaN clad layer;

a conductive substrate formed on a lower surface of the conductive adhesive layer;

a second contact formed on a lower surface of said conductive substrate; and

a reflective layer made of a conductive material and formed between and in direct contact with both the second conductive GaN clad layer and the conductive adhesive layer;

wherein

the conductive adhesive layer is made of a material selected from the group consisting of Au—

Sn, Sn, In, Au—

Ag and Pb—

Sn; and

the reflective layer has a uniform thickness and covers the entire lower surface of the second conductive GaN clad layer, the reflective layer being in direct and ohmic contact with the second conductive GaN clad layer throughout the entire lower surface of the second conductive GaN clad layer.

2. The GaN light emitting diode as set forth in claim 1, wherein the reflective layer is made of a material selected from the group consisting of Au, Ni, Ag, Al and alloys thereof.

3. The GaN light emitting diode as set forth in claim 1, wherein the conductive substrate is made of a material selected from the group consisting of silicon (Si), germanium (Ge) and GaAs.

4. The GaN light emitting diode as set forth in claim 1, wherein the active layer is in direct contact with the lower surface of the first conductive GaN clad layer.

5. The GaN light emitting diode as set forth in claim 1, wherein the active layer is in direct contact with the lower surface of the first conductive GaN clad layer.

6. The GaN light emitting diode as set forth in claim 5, wherein the second contact is in direct contact with and covers the entire lower surface of said conductive substrate.

7. The GaN light emitting diode as set forth in claim 1, further comprising

an upper surface defined together by said first contact and said upper surface of the first conductive GaN clad layer;

a lower surface defined by a lower surface of said second contact; and

opposite side surfaces extending between and connecting said upper and lower surfaces of said diode;

wherein the reflective layer extends continuously without interruption from one of said side surfaces to the opposite one of side surfaces.

8. The GaN light emitting diode as set forth in claim 7, wherein the active layer is in direct contact with the lower surface of the first conductive GaN clad layer.

9. The GaN light emitting diode as set forth in claim 8, wherein the second contact is in direct contact with and covers the entire lower surface of said conductive substrate.