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Integrated switching voltage regulator using copper process technology

  • US 7,268,410 B1
  • Filed: 01/24/2005
  • Issued: 09/11/2007
  • Est. Priority Date: 01/24/2005
  • Status: Active Grant
First Claim
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1. An integrated switching voltage regulator circuit comprising:

  • a diode anode layer of P-type semiconductor material;

    a diode cathode layer of N-type semiconductor material formed on an upper surface of the diode anode layer such that the diode anode layer and the diode cathode layer combine to form a diode structure of the switching voltage regulator circuit;

    a switching transistor formed over and extending into the diode cathode layer;

    an inductor formed over the diode cathode layer and spaced apart therefrom by intervening dielectric material, the inductor also being spaced apart from the switching transistor;

    a conductive interconnect structure disposed to electrically interconnect the diode structure, the switching transistor and the inductor, the conductive interconnect structure including a conductive voltage supply contact formed to extend from a lower surface of the diode anode layer through the diode anode layer and a portion of the diode cathode layer and into electrical contact with the switching transistor;

    and wherein the switching voltage regulator circuit is adapted for connection to a capacitor.

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