Floating gate memory with split-gate read transistor and split gate program transistor memory cells and method for making the same
First Claim
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1. A floating gate memory array, comprising:
- a) an array of floating gate memory cells,b) a source line coupled to cells in a row of said array,c) a word line coupled to control gates of transistors of said memory cells in the row of said array, andd) a read bit line and a program bit line connecting between said memory cells in each column of said array,wherein a split gate read transistor, a split gate program transistor and a spare split gate transistor form said memory cells.
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Abstract
Variations in memory array and cell configuration are shown, which eliminate punch-through disturb, reverse-tunnel. Several configurations are shown which range from combined and separate source lines for each row of cells, a two transistor cell containing a read transistor and a program transistor connected by a merged floating gate, and a two transistor cell where the program transistor has an extra implant to raise the Vt of the transistor to protect against punch-through disturb. A method is also described to rewrite disturbed cells, which were not selected to be programmed.
33 Citations
12 Claims
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1. A floating gate memory array, comprising:
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a) an array of floating gate memory cells, b) a source line coupled to cells in a row of said array, c) a word line coupled to control gates of transistors of said memory cells in the row of said array, and d) a read bit line and a program bit line connecting between said memory cells in each column of said array, wherein a split gate read transistor, a split gate program transistor and a spare split gate transistor form said memory cells. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A floating gate memory array, comprising:
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a) an array of floating gate memory cells, b) a source line coupled to cells in a row of said array, c) a word line coupled to control gates of transistors of said memory cells in said row of said array, and d) a read bit line and a program bit line connecting between said memory cells in each column of said array, wherein; a split gate read transistor, a split gate program transistor and a spare split gate transistor form said memory cells, a floating gate of said read transistor is connected to the floating gate of said program transistor thereby merging the two floating gates, said read bit line is connected to a drain of said read transistor, said program bit line is formed by a first program bit line and a second program bit line, said first program bit line is connected to the drain of said split gate program transistor, and said second program bit line is connected to the drain of said spare split gate transistor.
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Specification