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Programming memory devices

  • US 7,269,066 B2
  • Filed: 05/11/2005
  • Issued: 09/11/2007
  • Est. Priority Date: 05/11/2005
  • Status: Expired due to Fees
First Claim
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1. A method of programming a target memory cell of a memory device, comprising:

  • programming a plurality of initial programming voltages into the memory device after fabrication of the memory device;

    programming a step voltage into the memory device after fabrication of the memory device;

    selecting one of the plurality of the programmed initial programming voltages;

    applying a programming voltage substantially equal to the selected one of the plurality of the programmed initial programming voltages to a word line that includes the target memory cell;

    determining whether the target memory cell is programmed; and

    increasing the programming voltage by the programmed step voltage if it is determined that the target memory cell is not programmed.

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