Method and apparatus for storing failing part locations in a module

• US 7,269,765 B1
• Filed: 04/13/2000
• Issued: 09/11/2007
• Est. Priority Date: 04/13/2000
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Prak, Sovandy N., Charlton, David E., Robinson, Keith E.
• Primary Examiner(s): BRITT, CYNTHIA H
• Application Number:
  US09/548,826
• Time in Patent Office: 2,707 Days
• Field of Search: 714/718, 714/746, 714/723, 714 40- 42, 714/710, 714/711, 365/145, 365200-201
• US Class Current: 714/710
• CPC Class Codes: G11C 2029/4402 Internal storage of test result, quality data, chip identification, repair information
• CPC Class Codes: G11C 29/44 Indication or identification of errors, e.g. for repair
• CPC Class Codes: G11C 29/88 with partially good memories
• CPC Class Codes: G11C 29/886 combining plural defective memory devices to provide a contiguous address range, e.g. one device supplies working blocks to replace defective blocks in another device
• CPC Class Codes: G11C 5/04 Supports for storage elements , e.g. memory modules; Mounting or fixing of storage elements on such supports

Abstract

A non-volatile storage device on a memory module comprising a plurality of memory devices is used to store the locations of defective parts on the memory module, such as data query (“DQ”) terminals, identified during a testing procedure. After testing, the non-volatile storage device, such as an electrically erasable programmable read only memory (“EEPROM”), may be accessed to determine specific memory devices such as dynamic random access memory (“DRAM”) which need to be repaired or replaced rather than re-testing the specific memory module.

Claims

1. A memory module, comprising:

a memory module carrier substrate;

a plurality of discrete memory devices disposed on the memory module carrier substrate; and

at least one discrete non-volatile storage device disposed on the memory module carrier substrate, the at least one discrete non-volatile storage device configured for storing data indicating a device location of at least one failing discrete memory device of the plurality of discrete memory devices;

wherein if a device location of at least one failing discrete memory device has been indicated, the memory module carrier substrate is in a repaired state subsequent to physical removal of the at least one failing discrete memory device at the device location and disposition of at least one replacement discrete memory device at the device location.

2. The memory module of claim 1, wherein the at least one discrete non-volatile storage device is one of an EEPROM, an EPROM, a ferro-electronic device and a flash memory chip.

3. The memory module of claim 1, wherein at least a portion of the plurality of discrete memory devices are fully functional dice.

4. A computer system, comprising:

a processor; and

a memory module, comprising;

a memory module carrier substrate;

a plurality of discrete memory devices disposed on the memory module carrier substrate; and

at least one discrete non-volatile storage device disposed on the memory module carrier substrate, the at least one discrete non-volatile storage device configured for storing data indicating a device location of at least one failing discrete memory device of the plurality of discrete memory devices;

wherein if a device location of at least one failing discrete memory device has been indicated the memory module carrier substrate is in a repaired state subsequent to physical removal of the at least one failing discrete memory device at the device location and disposition of at least one replacement discrete memory device at the device location.

5. The computer system of claim 4, wherein the at least one discrete non-volatile storage device is at least one of an EEPROM, an EPROM, a ferro-electronic device and a flash memory chip.

6. The computer system of claim 4, wherein at least a portion of the plurality of discrete memory devices are fully functional dice.

7. A method of testing a memory module, the method comprising:

testing a memory module including a memory module carrier substrate and a plurality of discrete memory devices disposed on the memory module carrier substrate;

identifying data indicative of a device location of at least one failing discrete memory device of the plurality of discrete memory devices;

storing the identified data on the memory module;

accessing the stored data and identifying the device location of the at least one failing discrete memory device;

physically removing the at least one failing discrete memory device from the device location; and

disposing at least one replacement discrete memory device at the device location of the at least one failing discrete memory device.

8. The method of claim 7, wherein storing the identification of the at least one failed output further comprises storing data in at least one discrete non-volatile storage device on the memory module.

9. The method of claim 8, further comprising selecting the at least one discrete non-volatile storage device from at least one of an EEPROM, an EPROM, a ferro-electronic device and a flash memory chip.

10. A method of fabricating a memory module, the method comprising:

placing a plurality of discrete memory devices on a memory module carrier substrate;

testing each of a plurality of elements associated with each of the plurality of discrete memory devices on the memory module carrier substrate;

storing data indicative of a device location of at least one failing discrete memory device of the plurality of discrete memory devices;

subsequently accessing the stored data indicative of the device location of the at least one failing discrete memory device;

physically removing the at least one failing discrete memory device from the device location; and

placing at least one replacement discrete memory device at the device location of the at least one failing discrete memory device.

11. The method of claim 10, further comprising testing the at least one replacement discrete memory device on the memory module substrate.