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BMEMS-type high-sensitivity inertial sensor and manufacturing process thereof

  • US 7,270,003 B2
  • Filed: 07/25/2005
  • Issued: 09/18/2007
  • Est. Priority Date: 07/29/2004
  • Status: Active Grant
First Claim
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1. A semiconductor inertial sensor, comprising:

  • a fixed region;

    a rotor element having a first semiconductor layer, an intermediate layer positioned on the first semiconductor layer, and a second semiconductor layer positioned on the intermediate layer; and

    a stator element formed from the first semiconductor layer and electrostatically coupled to the rotor element, said rotor element comprising a suspended mass carried by said fixed region via elastic suspension elements formed in said first semiconductor layer, said suspended mass having a first thickness and said elastic suspension elements having a second thickness, different from said first thickness.

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