BMEMS-type high-sensitivity inertial sensor and manufacturing process thereof
First Claim
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1. A semiconductor inertial sensor, comprising:
- a fixed region;
a rotor element having a first semiconductor layer, an intermediate layer positioned on the first semiconductor layer, and a second semiconductor layer positioned on the intermediate layer; and
a stator element formed from the first semiconductor layer and electrostatically coupled to the rotor element, said rotor element comprising a suspended mass carried by said fixed region via elastic suspension elements formed in said first semiconductor layer, said suspended mass having a first thickness and said elastic suspension elements having a second thickness, different from said first thickness.
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Abstract
The semiconductor inertial sensor is formed by a rotor element and a stator element electrostatically coupled together. The rotor element is formed by a suspended mass and by a plurality of mobile electrodes extending from the suspended mass. The stator element is formed by a plurality of fixed electrodes facing respective mobile electrodes. The suspended mass is supported by elastic suspension elements. The suspended mass has a first, larger, thickness, and the elastic suspension elements have a second thickness, smaller than the first thickness.
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Citations
17 Claims
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1. A semiconductor inertial sensor, comprising:
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a fixed region; a rotor element having a first semiconductor layer, an intermediate layer positioned on the first semiconductor layer, and a second semiconductor layer positioned on the intermediate layer; and a stator element formed from the first semiconductor layer and electrostatically coupled to the rotor element, said rotor element comprising a suspended mass carried by said fixed region via elastic suspension elements formed in said first semiconductor layer, said suspended mass having a first thickness and said elastic suspension elements having a second thickness, different from said first thickness. - View Dependent Claims (2, 3, 4, 5, 6, 15)
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7. A micro-electro-mechanical device, comprising:
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a semiconductor substrate; a rotor having a suspended mass a first thickness positioned in a spaced-apart relationship with the substrate wherein the semiconductor substrate extends directly below the suspended mass; and an elastic suspension element having a second thickness, different from the first thickness, coupled between the rotor and the substrate wherein the rotor includes portions of first and second semiconductor material layers formed on the substrate, and the suspension element includes a portion of the first semiconductor material layer. - View Dependent Claims (8, 9, 10, 16, 17)
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11. A system, comprising:
an inertial sensor formed on a semiconductor material substrate, the inertial sensor including; a rotor having a suspended mass in a spaced-apart relationship with a surface of the substrate wherein the surface of the substrate extends directly below the suspended mass, the rotor having a first thickness, a stator rigidly coupled to the substrate, and a spring element having a second thickness, different from the first thickness, the spring element coupled between the rotor and the substrate wherein the rotor includes a first semiconductor layer, an intermediate layer positioned on the first semiconductor layer, and a second semiconductor layer positioned on the intermediate layer. - View Dependent Claims (12, 13, 14)
Specification