Method of forming a field effect transistor using conductive masking material
First Claim
1. A method of forming a field effect transistor having a gate comprising a conductive metal or metal compound received over conductively doped semiconductive material, the method comprising:
- forming transistor gate semiconductive material into a gate line over a semiconductive material channel region, the gate line comprising semiconductive material sidewalls;
forming conductive masking material over the transistor gate semiconductive material;
oxidizing the semiconductive material sidewalls of the gate line;
after the oxidizing, depositing insulative material over the gate line;
after the depositing, removing the insulative material and the conductive masking material effective to expose the gate line; and
after the removing, forming at least one of a conductive metal or metal compound in electrical connection with the transistor gate semiconductive material to comprise a substantially coextensive elongated portion of a final construction of the gate line of the field effect transistor being formed, the forming the at least one of a conductive metal or metal compound to comprise a substantially coextensive elongated portion of a final construction of the gate line of the field effect transistor being formed comprising deposition of said at least one and patterning and subtractively etching of said at least one.
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Accused Products
Abstract
The invention includes methods of forming field effect transistors. In one implementation, a method of forming a field effect transistor having a gate comprising a conductive metal or metal compound received over conductively doped semiconductive material includes forming transistor gate semiconductive material into a gate line over a semiconductive material channel region. The gate line includes semiconductive material sidewalls. The semiconductive material sidewalls of the gate line are oxidized. After the oxidizing, at least one of a conductive metal or metal compound is formed in electrical connection with the transistor gate semiconductive material to comprise a substantially coextensive elongated portion of a final construction of the gate line of the field effect transistor being formed.
12 Citations
20 Claims
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1. A method of forming a field effect transistor having a gate comprising a conductive metal or metal compound received over conductively doped semiconductive material, the method comprising:
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forming transistor gate semiconductive material into a gate line over a semiconductive material channel region, the gate line comprising semiconductive material sidewalls; forming conductive masking material over the transistor gate semiconductive material; oxidizing the semiconductive material sidewalls of the gate line; after the oxidizing, depositing insulative material over the gate line; after the depositing, removing the insulative material and the conductive masking material effective to expose the gate line; and after the removing, forming at least one of a conductive metal or metal compound in electrical connection with the transistor gate semiconductive material to comprise a substantially coextensive elongated portion of a final construction of the gate line of the field effect transistor being formed, the forming the at least one of a conductive metal or metal compound to comprise a substantially coextensive elongated portion of a final construction of the gate line of the field effect transistor being formed comprising deposition of said at least one and patterning and subtractively etching of said at least one. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of forming a field effect transistor having a gate comprising a conductive metal or metal compound received over conductively doped semiconductive material, the method comprising:
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forming transistor gate semiconductive material over a semiconductive material channel region; forming conductive masking material over the transistor gate semiconductive material; forming the transistor gate semiconductive material and the conductive masking material into a gate line, the gate line comprising semiconductive material sidewalls; oxidizing the semiconductive material sidewalls of the gate line; after the oxidizing, depositing insulative material over the gate line; after the depositing, removing the insulative material effective to expose the gate line; and after the removing, forming at least one of a conductive metal or metal compound in electrical connection with the transistor gate semiconductive material to comprise a substantially coextensive elongated portion of a final construction of the gate line of the field effect transistor being formed. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification