Capacitor with insulating nanostructure
First Claim
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1. A device comprising:
- a lower conductor;
an insulating nanostructure disposed over said lower conductor, said insulating nanostructure being part of a discontinuous layer, said insulating nanostructure being loosely arranged as discrete insulating nanostructure;
a thin conductor disposed over said insulating nanostructure wherein portions of said thin conductor are disposed in contact with said lower conductor;
a thin dielectric disposed over said thin conductor; and
an upper conductor disposed over said thin dielectric.
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Abstract
The present invention discloses a method including providing a substrate; forming a lower conductor over the substrate; forming a conducting nanostructure over the lower conductor; forming a thin dielectric over the conducting nanostructure; and forming an upper conductor over the thin dielectric. The present invention further discloses a device including a substrate; a lower conductor located over the substrate; a conducting nanostructure located over the lower conductor; a thin dielectric located over the conducting nanostructure; and an upper conductor located over the thin dielectric.
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Citations
4 Claims
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1. A device comprising:
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a lower conductor; an insulating nanostructure disposed over said lower conductor, said insulating nanostructure being part of a discontinuous layer, said insulating nanostructure being loosely arranged as discrete insulating nanostructure; a thin conductor disposed over said insulating nanostructure wherein portions of said thin conductor are disposed in contact with said lower conductor; a thin dielectric disposed over said thin conductor; and an upper conductor disposed over said thin dielectric. - View Dependent Claims (2, 3, 4)
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Specification