Semiconductor device with sidewall wiring

• US 7,271,466 B2
• Filed: 08/18/2005
• Issued: 09/18/2007
• Est. Priority Date: 04/23/2002
• Status: Expired due to Term

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Inventors: Noma, Takashi, Shinogi, Hiroyuki, Takai, Nobuyuki, Kitagawa, Katsuhiko, Tokushige, Ryoji, Otagaki, Takayasu, Ando, Tatsuya, Okigawa, Mitsuru
• Primary Examiner(s): Doan, Theresa T.
• Application Number:
  US11/206,146
• Publication Number:
  US 20060033198A1
• Time in Patent Office: 761 Days
• Field of Search: 257737-738, 257782-784, 257/621, 257/686
• US Class Current: 257/621
• CPC Class Codes: H01L 2224/02377 Fan-in arrangement
• CPC Class Codes: H01L 2224/05548 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05556 in side view
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 23/3114 the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/10 Bump connectors bumps on insulating substrates, e.g. chip carriers, H01L23/49816; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/13 of an individual bump connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01021 Scandium [Sc]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10156 : at the periphery
• CPC Class Codes: H01L 2924/14 : Integrated circuits

Abstract

Cost is reduced and reliability is improved with a BGA (Ball Grid Array) type semiconductor device which has ball-shaped conductive terminals. A first wiring is formed on an insulation film which is formed on a surface of a semiconductor die. A glass substrate is bonded over the surface of the semiconductor die, and a side surface and a back surface of the semiconductor die are covered with an insulation film. A second wiring is connected to a side surface or a back surface of the first wiring and extending over the back surface of the semiconductor die. A conductive terminal such as a bump is formed on the second wiring.

Claims

1. A semiconductor device comprising:

a semiconductor die;

a first insulation film formed on a front surface of the semiconductor die;

a first wiring layer formed on the first insulation film so that part of a bottom surface of the first wiring layer is in contact with the first insulation film;

a second insulation film comprising a side film and a back film, the side film being disposed on an outside sidewall of the semiconductor die and the back film being disposed on a back surface of the semiconductor die;

a second wiring layer formed on the side film and the back film so that an edge of the second wiring layer is in direct physical contact with another part of the bottom surface of the first wiring layer;

a third insulation film formed on the second wiring layer; and

a conductive terminal formed on the second wiring layer.

2. The semiconductor device of claim 1, further comprising a holding member disposed over the front surface of the semiconductor die and holding the semiconductor die.

3. The semiconductor device of claim 2, wherein the holding member comprises a glass plate, a plastic plate, a film, a silicon substrate, a reclaimed silicon substrate, an oxide film or a transparent resin plate.

4. The semiconductor device of claim 1, wherein the conductive terminal penetrates the third insulation film.

5. The semiconductor device of claim 1, wherein the side film and the back film are made of a same material.

6. The semiconductor device of claim 1, wherein the outside sidewall of the semiconductor die is slanted so that the front surface of the semiconductor die is larger than the back surface of the semiconductor die.

7. The semiconductor device of claim 1, wherein the semiconductor die comprises a CCD image sensor.