Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells
First Claim
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1. A magnetic memory comprising:
- a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic element, at least one dummy resistor, and at least one selection transistor including at least one source and at least one drain, the at least one magnetic element capable of being programmed using spin transfer induced switching by a write current driven through the at least one magnetic element, the at least one selection transistor configured to allow the at least one magnetic element to be alternately selected for writing and reading, the at least one dummy resistor being coupled the at least one source or the at least one drain and the at least one magnetic element being coupled with another of the at least one source or the at least one drain.
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Abstract
A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each of the plurality of magnetic storage cells includes at least one magnetic element and a plurality of selection transistors. The at least one magnetic element is capable of being programmed using spin transfer induced switching by a write current driven through the at least one magnetic element. The at least one selection transistor is configured to allow the magnetic element to be alternately selected for writing and reading. Architectures for reading and writing to the magnetic storage cells are also described.
247 Citations
37 Claims
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1. A magnetic memory comprising:
a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic element, at least one dummy resistor, and at least one selection transistor including at least one source and at least one drain, the at least one magnetic element capable of being programmed using spin transfer induced switching by a write current driven through the at least one magnetic element, the at least one selection transistor configured to allow the at least one magnetic element to be alternately selected for writing and reading, the at least one dummy resistor being coupled the at least one source or the at least one drain and the at least one magnetic element being coupled with another of the at least one source or the at least one drain.
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2. A magnetic memory comprising:
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a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic element and at least one selection transistor, the at least one magnetic element capable of being programmed using spin transfer induced switching by a write current driven through the at least one magnetic element, the at least one selection transistor configured to allow the at least one magnetic element to be alternately selected for writing and reading, the at least one selection transistor including a read selection transistor and a write selection transistor, the at least one magnetic element includes a single magnetic element having an end, the write selection transistor and the read selection transistor being coupled with the end of the single magnetic element to selectively allow the write current and a read current to flow through the single magnetic element; wherein each of the plurality of magnetic storage cells further includes a dummy resistor, wherein the write selection transistor includes a source and a drain, the dummy resistor being coupled with the source or the drain and the magnetic element being coupled with another of the source or the drain. - View Dependent Claims (3, 4, 5, 6)
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7. A magnetic memory comprising:
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a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic element and at least one selection transistor, the at least one magnetic element capable of being programmed using spin transfer induced switching by a write current driven through the at least one magnetic element, the at least one selection transistor configured to allow the at least one magnetic element to be alternately selected for writing and reading and for ensuring that the write current is driven through the at least one magnetic element during the writing; wherein the at least one selection transistor includes a read selection transistor and a write selection transistor and wherein the at least one magnetic element includes a single magnetic element having an end, the write selection transistor and the read selection transistor being coupled with the end of the single magnetic element to selectively allow the write current and a read current to flow through the single magnetic element; wherein the write selection transistor has a write selection transistor drain and the read selection transistor has a read selection transistor drain, the write selection transistor drain and the read selection transistor drain being coupled with the end of the magnetic element; wherein each of the plurality of magnetic storage cells further includes a dummy resistor, wherein the write selection transistor includes a source and a drain, the dummy resistor being coupled with one of the source or the drain and the magnetic element being coupled with another of the source or the drain. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37)
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Specification