Ultra-thin semiconductors bonded on glass substrates
First Claim
1. A method for forming an electronic device comprising:
- bonding a semiconductor layer to a glass substrate, the semiconductor layer having a thickness of less than 0.1 μ
m such that the semiconductor layer does not yield due to temperature-induced strain at device processing temperatures; and
forming circuitry in the semiconductor layer.
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Accused Products
Abstract
A method for forming a semiconductor on insulator structure includes providing a glass substrate, providing a semiconductor wafer, and performing a bonding cut process on the semiconductor wafer and the glass substrate to provide a thin semiconductor layer bonded to the glass substrate. The thin semiconductor layer is formed to a thickness such that it does not yield due to temperature-induced strain at device processing temperatures. An ultra-thin silicon layer bonded to a glass substrate, selected from a group consisting of a fused silica substrate, a fused quartz substrate, and a borosilicate glass substrate, provides a silicon on insulator wafer in which circuitry for electronic devices is fabricated.
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Citations
34 Claims
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1. A method for forming an electronic device comprising:
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bonding a semiconductor layer to a glass substrate, the semiconductor layer having a thickness of less than 0.1 μ
m such that the semiconductor layer does not yield due to temperature-induced strain at device processing temperatures; andforming circuitry in the semiconductor layer. - View Dependent Claims (2, 3)
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4. A method for forming an electronic device comprising:
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implanting ions into a silicon wafer; attaching the silicon wafer to a glass substrate forming an attached structure; thermally processing the silicon wafer attached to the glass substrate to cut a portion of the silicon wafer from the attached structure; processing the attached structure to provide a silicon layer having a thickness of less than 0.1 microns; and forming circuitry in a silicon layer. - View Dependent Claims (5, 6, 7)
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8. A method for forming an electronic device comprising:
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performing a bonding cut process on a silicon wafer and a glass substrate to provide a silicon layer bonded to the glass substrate, the silicon layer having a thickness such that the silicon layer does not yield due to temperature-induced strain at device processing temperatures; and forming circuitry in the silicon layer. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method for fabricating a transistor comprising:
providing a semiconductor on insulator structure formed by a method including; conditioning a semiconductor wafer; and performing a bonding cut process on a semiconductor wafer and a glass substrate to provide a semiconductor layer, from the semiconductor wafer, bonded to the glass substrate, the semiconductor layer having a thickness such that the semiconductor layer does not yield due to temperature-induced strain at device processing temperatures; and
forming a transistor in the semiconductor on insulator structure.- View Dependent Claims (22, 23, 24)
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25. A method for fabricating a memory device comprising:
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providing a silicon on insulator structure formed by a method including; conditioning a silicon wafer; and performing a bonding cut process on the silicon wafer and a glass substrate to provide a silicon layer bonded to the glass substrate, the silicon layer having a thickness of about 0.1 microns; and forming a memory circuit in the silicon on insulator structure. - View Dependent Claims (26, 27, 28, 29)
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30. A method for manufacturing an electronic system comprising:
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providing a processor; and coupling a memory device to the processor, the memory device formed by a method including; providing a silicon on insulator structure formed by a method including; providing a glass substrate; performing a bonding cut process on a silicon wafer and the glass substrate to provide a silicon layer bonded to the glass substrate, the silicon layer having a thickness such that the silicon layer does not yield due to temperature-induced strain at device processing temperatures; and forming a memory circuit in the silicon on insulator structure. - View Dependent Claims (31, 32, 33, 34)
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Specification