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Ultra-thin semiconductors bonded on glass substrates

  • US 7,273,788 B2
  • Filed: 05/21/2003
  • Issued: 09/25/2007
  • Est. Priority Date: 05/21/2003
  • Status: Active Grant
First Claim
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1. A method for forming an electronic device comprising:

  • bonding a semiconductor layer to a glass substrate, the semiconductor layer having a thickness of less than 0.1 μ

    m such that the semiconductor layer does not yield due to temperature-induced strain at device processing temperatures; and

    forming circuitry in the semiconductor layer.

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