Internally reinforced bond pads

• US 7,273,804 B2
• Filed: 01/06/2005
• Issued: 09/25/2007
• Est. Priority Date: 04/03/2003
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Sauter, Wolfgang, Petrarca, Kevin Shawn, Volant, Richard Paul, Angell, David, McKnight, Samuel Roy, Hisada, Takashi, Beaulieu, Frederic, Kelly, Adreanne, Miyai, Hiromitsu, Weinstein, Caitlin W.
• Primary Examiner(s): Whitehead, Jr.; Carl
• Assistant Examiner(s): Mitchell; James M
• Application Number:
  US11/030,496
• Publication Number:
  US 20050121803A1
• Time in Patent Office: 992 Days
• Field of Search: None
• US Class Current: 438/612
• CPC Class Codes: H01L 2224/05073 Single internal layer
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05187 Ceramics, e.g. crystalline carbides, nitrides or oxides glass ceramics H01L2224/05188
• CPC Class Codes: H01L 2224/05556 in side view
• CPC Class Codes: H01L 2224/05558 conformal layer on a patterned surface
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01022 Titanium [Ti]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01032 Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

Disclosed is a reinforced bond pad structure having nonplanar dielectric structures and a metallic bond layer conformally formed over the nonplanar dielectric structures. The nonplanar dielectric structures are substantially reproduced in the metallic bond layer so as to form nonplanar metallic structures. Surrounding each of the nonplanar metallic structures is a ring of dielectric material which provides a hard stop during probing of the bond pad so as to limit the amount of bond pad that can be removed during probing.

Claims

1. A method of forming internally reinforced bond pads, the method comprising the steps of:

forming a metallic layer on a substrate;

forming a first dielectric layer over the metallic layer;

patterning a first portion of the first dielectric layer so as to form at least one through via to the metallic layer and a plurality of spaced-apart dielectric structures, a second portion of the first dielectric layer being unpatterned;

conformally depositing a metallic bond layer over the spaced-apart dielectric structures and into the through via such that the spaced-apart dielectric structures are substantially reproduced in the metallic bond layer as spaced-apart metallic structures;

forming a second dielectric layer over the spaced-apart metallic structures and the unpatterned portion of the first dielectric layer; and

removing substantially all of the second dielectric layer over the spaced-apart metallic structures except for a plurality of separated discrete rings of dielectric material wherein each ring surrounds a spaced-apart metallic structure.

2. The method of claim 1 wherein the spaced-apart metallic structures comprise columns or stripes.

3. The method of claim 1 wherein the spaced-apart dielectric structures have vertical sides.

4. The method of claim 1 wherein there is a barrier layer between the metallic layer and the metallic bond layer.

5. The method of claim 1 wherein the ring of dielectric material comprises silicon nitride or silicon oxide.

6. The method of claim 1 wherein each of the spaced-apart metallic structures comprises a base portion and a top portion and each ring of dielectric material surrounds only the base portion of each of the spaced-apart metallic structures.

7. The method of claim 1 wherein in the step of removing, the ring of dielectric material is surrounding and in contact with each of the spaced-apart metallic structures.

8. A method of forming internally reinforced bond pads, the method comprising the steps of:

forming a metallic layer on a substrate;

forming a first dielectric layer over the metallic layer;

patterning a first portion of the first dielectric layer so as to form at least one through via to the metallic layer and a plurality of spaced-apart dielectric structures, a second portion of the first dielectric layer being unpatterned;

conformally depositing a metallic bond layer over the spaced-apart dielectric structures and into the through via such that the spaced-apart dielectric structures are substantially reproduced in the metallic bond layer as spaced-apart metallic structures;

forming a second dielectric layer over the spaced-apart metallic structures and the unpatterned portion of the first dielectric layer; and

removing substantially all of the second dielectric layer from the spaced-apart metallic structures so as to expose the spaced-apart metallic structures except for a plurality of separated discrete rings of dielectric material in wherein each ring surrounds a spaced-apart metallic structure.

9. The method of claim 8 wherein in the step of removing, the ring of dielectric material is surrounding and in contact with each of the spaced-apart metallic structures.