Methods for removal of organic materials

• US 7,273,816 B2
• Filed: 08/02/2006
• Issued: 09/25/2007
• Est. Priority Date: 04/25/2002
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Sinha, Nishant
• Primary Examiner(s): Geyer; Scott B.
• Application Number:
  US11/499,096
• Publication Number:
  US 20060270141A1
• Time in Patent Office: 419 Days
• Field of Search: 438/689, 438/690, 438/691, 438/692, 438/693
• US Class Current: 438/690
• CPC Class Codes: G03F 7/42 Stripping or agents therefor
• CPC Class Codes: G03F 7/425 containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
• CPC Class Codes: H01L 21/31058 of organic layers
• CPC Class Codes: H01L 21/3212 by chemical mechanical polishing [CMP]
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 28/55 with a dielectric comprising a perovskite structure material
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: H01L 28/91 made by depositing layers, e.g. by depositing alternating conductive and insulating layers
• CPC Class Codes: H10B 12/0335 Making a connection between the transistor and the capacitor, e.g. plug

Abstract

The invention includes methods of forming capacitor structures and removing organic material. An organic material, such as a photoresist, is disposed on a substrate. The organic material is contacted with a chemical mechanical polishing pad and a polishing fluid to remove the organic material from the substrate. The polishing fluid can be essentially free of particles, and can be water.

Claims

1. A method for removing organic materials comprising removing at least a portion of an organic-material-comprising layer from a semiconductive substrate surface with a pad and a fluid, the fluid being substantially unreactive with the surface and comprising less than or equal to about 0.1 weight percent particles at an initiation of the removing.

2. The method of claim 1 wherein the organic-material-comprising layer comprises one or more of photoresist, non-photosensitive resist, and polyimide.

3. The method of claim 1 wherein a pH of the fluid is from about 8 to about 12.

4. The method of claim 1 wherein the fluid comprises one or both of ammonia and TMAH.

5. The method of claim 1 wherein the fluid comprises water.

6. The method of claim 1 wherein the surface comprises a conductive material.

7. The method of claim 6, wherein the conductive material comprises one or more of platinum, iridium, ruthenium, and tantalum.

8. The method of claim 1 wherein the pad comprises polyurethane.

9. A material removal method comprising

providing a substrate supporting a conductive-material-comprising layer, the conductive-material-comprising layer having an organic-material-comprising layer thereover;

selectively removing at least a portion of the organic-material-comprising layer with a first polishing process utilizing a first liquid to thereby expose at least a portion of an upper surface of the conductive-material-comprising layer, wherein the first liquid is substantially unreactive with the conductive-material-comprising layer and comprises less than or equal to 0.1 weight percent particles at an initiation of the removing; and

removing at least a portion of the conductive-material-comprising layer with a second polishing process utilizing a second liquid.

10. The method of claim 9 wherein the conductive-material-comprising layer comprises one or more of platinum, iridium, ruthenium, and tantalum.

11. The method of claim 9 wherein the organic-material-comprising layer comprises one or more of photoresist, non-photosensitive resist and polyimide.

12. The method of claim 9 wherein the first polishing process comprises removing at least a portion of the organic-material-comprising layer with a chemical mechanical polishing pad and the first liquid.

13. The method of claim 12 wherein the second polishing process comprises removing at least a portion of the conductive-material-comprising layer with the chemical mechanical polishing pad and the second liquid.

14. The method of claim 9 wherein the first liquid comprises water.

15. The method of claim 9 wherein the first liquid comprises one or both of ammonia and TMAH.

16. The method of claim 9 wherein the second liquid comprises less than or equal to approximately 0.1 weight percent particles at an initiation of the removing of the conductive-material-comprising layer.

17. The method of claim 9 wherein the second liquid comprises particles.

18. The method of claim 9 wherein a composition of the second liquid is different than a composition of the first liquid.