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Situ oxide cap layer development

  • US 7,273,823 B2
  • Filed: 06/03/2005
  • Issued: 09/25/2007
  • Est. Priority Date: 06/03/2005
  • Status: Expired due to Fees
First Claim
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1. A method of processing a substrate, comprising:

  • flowing an organosilicon compound and an oxidizing gas into a chamber;

    depositing a low dielectric constant film comprising silicon, carbon, and oxygen on a substrate in the chamber using the organosilicon compound and the oxidizing gas as precursors in the presence of RE power comprising low frequency RF power;

    turning off the low frequency RF power after the low dielectric constant film is deposited;

    increasing a flow rate of the oxidizing gas into the chamber;

    decreasing a flow rate of the organosilicon compound into the chamber; and

    thendepositing an oxide rich cap on the low dielectric constant film in the chamber from the organosilicon compound and the oxidizing gas.

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