Situ oxide cap layer development
First Claim
1. A method of processing a substrate, comprising:
- flowing an organosilicon compound and an oxidizing gas into a chamber;
depositing a low dielectric constant film comprising silicon, carbon, and oxygen on a substrate in the chamber using the organosilicon compound and the oxidizing gas as precursors in the presence of RE power comprising low frequency RF power;
turning off the low frequency RF power after the low dielectric constant film is deposited;
increasing a flow rate of the oxidizing gas into the chamber;
decreasing a flow rate of the organosilicon compound into the chamber; and
thendepositing an oxide rich cap on the low dielectric constant film in the chamber from the organosilicon compound and the oxidizing gas.
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Accused Products
Abstract
A method of processing a substrate including depositing a low dielectric constant film comprising silicon, carbon, and oxygen on the substrate and depositing an oxide rich cap on the low dielectric constant film is provided. The low dielectric constant film is deposited in the presence of low frequency RF power from a gas mixture including an organosilicon compound and an oxidizing gas. The low frequency RF power is terminated after the deposition of the low dielectric constant film. The oxide rich cap is deposited on the low dielectric constant film in the absence of low frequency RF power from another gas mixture including the organosilicon compound and the oxidizing gas used to deposit the low dielectric constant film.
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Citations
20 Claims
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1. A method of processing a substrate, comprising:
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flowing an organosilicon compound and an oxidizing gas into a chamber; depositing a low dielectric constant film comprising silicon, carbon, and oxygen on a substrate in the chamber using the organosilicon compound and the oxidizing gas as precursors in the presence of RE power comprising low frequency RF power; turning off the low frequency RF power after the low dielectric constant film is deposited; increasing a flow rate of the oxidizing gas into the chamber; decreasing a flow rate of the organosilicon compound into the chamber; and
thendepositing an oxide rich cap on the low dielectric constant film in the chamber from the organosilicon compound and the oxidizing gas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of processing a substrate, comprising:
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flowing an organosilicon compound and an oxidizing gas into a chamber; depositing a low dielectric constant film comprising silicon, carbon, and oxygen on a substrate in the chamber using the organosilicon compound and the oxidizing gas as precursors in the presence of RF power comprising low frequency RF power and high frequency RE power; turning off the low frequency RE power after the low dielectric constant film is deposited; increasing a flow rate of the oxidizing gas into the chamber; decreasing a flow rate of the organosilicon compound into the chamber; and
thendepositing an oxide rich cap on the low dielectric constant film in the chamber from the organosilicon compound and the oxidizing gas while maintaining the high frequency RE power. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A method of processing a substrate, comprising:
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flowing an organosilicon compound, an oxidizing gas, and a carrier gas into a chamber; depositing a low dielectric constant film comprising silicon, carbon, and oxygen on a substrate in the chamber using the organosilicon compound and the oxidizing gas as precursors in the presence of RF power comprising low frequency RF power and high frequency RE power; turning off the low frequency RE power after the low dielectric constant film is deposited; increasing a flow rate of the oxidizing gas into the chamber; decreasing a flow rate of the organosilicon compound into the chamber; increasing a flow rate of the carrier gas in the chamber; and
thendepositing an oxide rich cap on the low dielectric constant film in the chamber from the organosilicon compound and the oxidizing gas while maintaining the high frequency RE power. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification