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Integrated circuit with bulk and SOI devices connected with an epitaxial region

  • US 7,274,073 B2
  • Filed: 10/08/2004
  • Issued: 09/25/2007
  • Est. Priority Date: 10/08/2004
  • Status: Expired due to Fees
First Claim
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1. A semiconductor integrated circuit, comprising:

  • a) a semiconductor-on-insulator (SOI) region with a buried dielectric layer;

    b) a bulk semiconductor region adjacent to the SOI region;

    c) a trench filled with epitaxial semiconductor material disposed between the SOI region and bulk regionwherein said epitaxial semiconductor material has a crystal orientation corresponding to crystal orientation of said SOI region adjacent said SOI region and a crystal orientation corresponding to said bulk semiconductor region adjacent said bulk semiconductor region and includes a transition of crystal orientation at approximately a center of said epitaxial semiconductor material if said crystal orientation of said SOI region and said crystal orientation of said bulk semiconductor region are different.

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