Integrated circuit with bulk and SOI devices connected with an epitaxial region
First Claim
1. A semiconductor integrated circuit, comprising:
- a) a semiconductor-on-insulator (SOI) region with a buried dielectric layer;
b) a bulk semiconductor region adjacent to the SOI region;
c) a trench filled with epitaxial semiconductor material disposed between the SOI region and bulk regionwherein said epitaxial semiconductor material has a crystal orientation corresponding to crystal orientation of said SOI region adjacent said SOI region and a crystal orientation corresponding to said bulk semiconductor region adjacent said bulk semiconductor region and includes a transition of crystal orientation at approximately a center of said epitaxial semiconductor material if said crystal orientation of said SOI region and said crystal orientation of said bulk semiconductor region are different.
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Accused Products
Abstract
An integrated circuit having devices fabricated in both SOI regions and bulk regions, wherein the regions are connected by a trench filled with epitaxially deposited material. The filled trench provides a continuous semiconductor surface joining the SOI and bulk regions. The SOI and bulk regions may have the same or different crystal orientations. The present integrated circuit is made by forming a substrate with SOI and bulk regions separated by an embedded sidewall spacer (made of dielectric). The sidewall spacer is etched, forming a trench that is subsequently filled with epitaxial material. After planarizing, the substrate has SOI and bulk regions with a continuous semiconductor surface. A butted P-N junction and silicide layer can provide electrical connection between the SOI and bulk regions.
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Citations
13 Claims
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1. A semiconductor integrated circuit, comprising:
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a) a semiconductor-on-insulator (SOI) region with a buried dielectric layer; b) a bulk semiconductor region adjacent to the SOI region; c) a trench filled with epitaxial semiconductor material disposed between the SOI region and bulk region wherein said epitaxial semiconductor material has a crystal orientation corresponding to crystal orientation of said SOI region adjacent said SOI region and a crystal orientation corresponding to said bulk semiconductor region adjacent said bulk semiconductor region and includes a transition of crystal orientation at approximately a center of said epitaxial semiconductor material if said crystal orientation of said SOI region and said crystal orientation of said bulk semiconductor region are different. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor integrated circuit, comprising:
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a) a semiconductor-on-insulator (SOI) region with a buried dielectric layer; b) a bulk semiconductor region adjacent to the SOI region; c) a P-N junction formed from a first type doping in the bulk region and a second type doping in the SOI region; d) a metal silicide layer disposed on and electrically bridging the P-N junction wherein epitaxial semiconductor material has a crystal orientation corresponding to crystal orientation of said SOI region adjacent said SOI region and a crystal orientation corresponding to said bulk semiconductor region adjacent said bulk semiconductor region and includes a transition of crystal orientation at approximately a center of said epitaxial semiconductor material if said crystal orientation of said SOI region and said crystal orientation of said bulk semiconductor region are different. - View Dependent Claims (11, 12, 13)
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Specification