System, apparatus and method for maskless lithography that emulates binary, attenuating phase-shift and alternating phase-shift masks

• US 7,274,502 B2
• Filed: 12/22/2004
• Issued: 09/25/2007
• Est. Priority Date: 12/22/2004
• Status: Expired due to Fees

• Current Assignee: ASML Holding NV
• Original Assignee: ASML Holding NV
• Inventors: Baba-Ali, Nabila, Bleeker, Arno
• Primary Examiner(s): THOMPSON, TIMOTHY J
• Application Number:
  US11/018,483
• Publication Number:
  US 20060132887A1
• Time in Patent Office: 1,007 Days
• Field of Search: 359/290, 359/291, 359/223, 359/224, 359/295, 355/53, 355/67, 355/71
• US Class Current: 359/290
• CPC Class Codes: G02B 26/0833 the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD G02B26/0825 takes precedence; micromechanical devices in general B81B
• CPC Class Codes: G03F 7/70291 Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices

Abstract

A tilting mirror design for maskless lithography is proposed. In this mirror, the tilting portion occupies about 60% of the entire element area. The surrounding space is made 100% reflective and out-of-phase with respect to the tilting portion. The ratio between the tilting portion of the mirror and the out-of-phase portion is optimized in order to result in equal positive and negative maximum amplitudes over a complete range of tilt angles.

Claims

1. A system, comprising:

an illumination system that supplies a beam of radiation having a wavelength;

an array of individually controllable elements that patterns the beam, each individually controllable element comprising a tilting portion and a non-tilting portion displaced from the tilting portion by a predetermined distance equal to a fraction of the wavelength; and

a projection system that projects the patterned beam onto a target portion of an object,

wherein the displacement causes radiation reflected by the tilting portion and the non-tilting portion to be out of phase in accordance with the fraction of the wavelength.

2. The system of claim 1, wherein the system is at least one of a maskless lithography system, a projector, and a projection display system.

3. The system of claim 1, wherein:

each of the non-tilting portions has a first reflective surface that is bounded by an inner periphery and outer periphery;

each of the tilting portions has a second reflective surface that is bounded by a periphery; and

each of the respective tilting portions is oriented with respect to the respective non-tilting portions so that the periphery of the respective tilting portions extends beyond the inner periphery of the respective non-tilting portions, but not beyond the outer periphery of the respective non-tilting portions.

4. The system of claim 3, wherein the respective tilting portions tilt about a central axis shared by the respective tilting portions and respective non-tilting portions.

5. The system of claim 1, wherein each of the respective tilting portions can be tilted through a complete range of tilt angles to produce substantially equal positive and negative maximum amplitudes of projected radiation at the target portion over the complete range of tilt angles.

6. The system of claim 1, wherein each respective tilting portion one of tilts through a positive range of tilt angles and a negative range of tilt angles, wherein a zero tilt angle is such that a first reflective surface of the non-tilting portion is substantially parallel to a second reflective surface of the tilting portion.

7. The system of claim 6, wherein at the zero tilt angle radiation reflected from the non-tilting portion is out-of-phase with radiation reflected from the tilting portion.

8. The system of claim 1, wherein each one of the respective tilting portions is tilted to a respective tilt angle so that the array of individually controllable elements emulates at least one of a binary reticle, an attenuating phase shift reticle, and an alternating phase shift reticle.

9. The system of claim 1, wherein the object is at least one of a substrate and a display device.

10. The system of claim 9, wherein the substrate comprises at least one of glass, a polymer, and a semiconductor material.

11. A patterning device for patterning incident radiation, comprising:

an array of first reflective portions, each of the first reflective portions having a first area;

an array of second reflective portions, each of the second reflective portions having a second area, wherein each of the second reflective portions can tilt through a predetermined range of tilt angles about an axis shared by the first reflective portions and the second reflective portions, respectively, and wherein each first reflective portion is displaced from a corresponding second reflective portion by a predetermined distance equal to a fraction of a wavelength λ

of the incident radiation causing radiation reflected thereby to be out of phase in accordance with the fraction of the wavelength λ

; and

an array of controllers coupled to one of respective ones of the second reflective portions and subsets of the second reflective portions, each of the controllers controlling the tilt angle of one of the respective ones of the second reflective portions and subsets of the second reflective portions.

12. The patterning device of claim 11, wherein:

each of the first areas of the first reflective portions is bounded by an inner and outer periphery;

each of the second areas of the second reflective portions is bounded by a periphery; and

each of the respective second reflective portions is oriented with respect to the respective first reflective portions such that the periphery of the respective second reflective portions extends beyond the inner periphery of the respective first reflective portions, but not beyond the outer periphery of the respective first reflective portions.

13. The patterning device of claim 11, wherein each respective second reflective portion one of tilts through a positive range of tilt angles and a negative range of tilt angles, wherein a zero tilt angle is such that a second reflective surface of the respective second reflective portions is substantially parallel to a first reflective surface of the respective first reflective portions.

14. The patterning device of claim 11, wherein the axis shared by the respective first and second reflective portions is a central longitudinal axis that is substantially parallel to a reflective surface of the respective first reflective portions.

15. The patterning device of claim 12, wherein the axis shared by the respective first and second reflective portions is substantially parallel to a substrate that supports the array of first reflective portions.

16. The patterning device of claim 11, wherein if the respective tilt angle of the respective second reflective portion is equal to a default value, a first reflective surface of the respective first reflective portion is substantially parallel to a second reflective surface of the respective second reflective portion.

17. The patterning device of claim 11, wherein:

the first reflective portion is mounted on a substrate;

the second reflective portion is supported above the substrate such that a height measured from a first reflective surface of the first reflective portion to a second reflective surface of the second reflective portion is approximately λ

/4 when the second reflective portion is substantially parallel to the substrate.

18. The patterning device of claim 11, wherein:

the first reflective portion is mounted on a substrate;

the second reflective portion is supported above the substrate such that a first reflective surface of the first reflective portion is above a second reflective surface of the second reflective portion and a height measured from the first reflective surface of the first reflective portion to the second reflective surface of the second reflective portion is approximately λ

/4 when the second reflective surface is substantially parallel to the substrate.

19. The patterning device of claim 11, wherein each of the respective second reflective portions is tilted to a respective predetermined tilt angle so that the patterning device emulates at least one of a binary reticle, an attenuating phase shift reticle, and an alternating phase shift reticle.

20. A method, comprising:

patterning a beam of radiation using an array of individually controllable elements, each of the individual elements in the array having a first reflective region that tilts and a second reflective region; and

projecting the patterned beam onto a target portion of an object, wherein each element produces substantially equal positive and negative maximum amplitudes of reflected radiation over a complete range of tilt angles.

21. The method of claim 20, further comprising emulating at least one of a binary reticle, an attenuating phase shift reticle, and an alternating phase shift reticle using the array of individually controllable elements.

22. The method of claim 20, wherein the projecting step comprises projecting the patterned beam onto a target portion of at least one of a substrate, a semiconductor substrate, a glass substrate, a polymer substrate, and a display device.

23. The method of claim 20, wherein the patterning step comprises:

patterning a beam of radiation using an array of individually controllable elements, each of the individual elements in the array having a first reflective region that tilts and a second reflective region, wherein the first reflective region and the second reflective region are non-coplanar for all angles through which the first reflective region tilts.

24. A system, comprising:

an illumination system that supplies a beam of radiation;

an array of individually controllable elements that patterns the beam, wherein each of the elements in the array of individually controllable elements comprises a tilting portion and a non-tilting portion,

each of the non-tilting portions having a first reflective surface that is bounded by an inner periphery and outer periphery,

each of the tilting portions having a second reflective surface that is bounded by a periphery, and

each of the respective tilting portions being oriented with respect to the respective non-tilting portions so that the periphery of the respective tilting portions extends beyond the inner periphery of the respective non-tilting portions, but not beyond the outer periphery of the respective non-tilting portions; and

a projection system that projects the patterned beam onto a target portion of an object;

wherein the first reflective surfaces of the respective non-tilting portions are sized to a predetermined percentage of an area of the respective elements so as to produce substantially equal positive and negative maximum amplitudes at the target portion over a complete range of tilt angles.

25. A patterning device, comprising:

an array of first reflective portions, each of the first reflective portions having a first area;

an array of second reflective portions, each of the second reflective portions having a second area, wherein each of the second reflective portions can tilt through a predetermined range of tilt angles about an axis shared by the first reflective portions and the second reflective portions, respectively, and wherein the first reflective portions and the second reflective portions are non-coplanar for all tilt angles; and

an array of controllers coupled to one of respective ones of the second reflective portions and subsets of the second reflective portions, each of the controllers controlling the tilt angle of one of the respective ones of the second reflective portions and subsets of the second reflective portions;

wherein a ratio of the area of the respective second reflective portions to the area of the respective first reflective portions produces substantially equal positive and negative maximum amplitudes of reflected radiation over a complete range of tilt angles.