Method and architecture to calibrate read operations in synchronous flash memory

• US 7,274,611 B2
• Filed: 07/28/2006
• Issued: 09/25/2007
• Est. Priority Date: 12/12/2001
• Status: Expired due to Fees

• Current Assignee: Round Rock Research LLC
• Original Assignee: Micron Technology, Inc.
• Inventors: Roohparvar, Frankic F.
• Primary Examiner(s): Hoang; Huan
• Application Number:
  US11/495,404
• Publication Number:
  US 20060262624A1
• Time in Patent Office: 424 Days
• Field of Search: 365/201, 365/185.09, 365/189.07, 714/715
• US Class Current: 365/201
• CPC Class Codes: G11C 16/04 using variable threshold transistors, e.g. FAMOS
• CPC Class Codes: G11C 16/26 Sensing or reading circuits; Data output circuits
• CPC Class Codes: G11C 2207/2254 Calibration
• CPC Class Codes: G11C 2207/2281 Timing of a read operation sense amplifier timing G11C7/06, G11C7/08
• CPC Class Codes: G11C 29/02 Detection or location of defective auxiliary circuits, e.g. defective refresh counters
• CPC Class Codes: G11C 29/026 in sense amplifiers
• CPC Class Codes: G11C 29/028 with adaption or trimming of parameters
• CPC Class Codes: G11C 29/50 Marginal testing, e.g. race, voltage or current testing
• CPC Class Codes: G11C 29/50004 of threshold voltage
• CPC Class Codes: G11C 7/1051 Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
• CPC Class Codes: G11C 7/1072 for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
• CPC Class Codes: G11C 7/1087 Data input latches
• CPC Class Codes: G11C 7/1093 Input synchronization

Abstract

Architecture to calibrate read operations in non-volatile memory devices. In one embodiment, a synchronous flash memory is disclosed. The synchronous flash memory includes a read sense amplifier, a verification sense amplifier, a switch, and an output buffer. The switch alternates electrical connection of the output buffer with the read sense amplifier and the verification sense amplifier. By measuring the distributions of voltage thresholds of erased cells versus voltage thresholds of programmed cells, differences in offsets between read state and write state of memory cells are determined. A specific margin is determined to ensure proper reads of the memory cells.

Claims

1. A method of calibrating a non-volatile memory comprising:

storing a test pattern in the non-volatile memory;

reading the test pattern with a first read circuit;

reading the test pattern with a second read circuit;

determining if an offset of what is read as a programmed and/or erased non-volatile memory cell exists between the first and second read circuits; and

adjusting either the first or second read circuit if an offset is determined.

2. The method of claim 1, wherein adjusting either the first or second read circuit if an offset is determined further comprises selectively adjusting input voltage levels of either the first or second read circuit if an offset is determined.

3. The method of claim 1, wherein adjusting either the first or second read circuit if an offset is determined further comprises selectively adjusting read timing of either the first or second read circuit if an offset is determined.

4. The method of claim 1, further comprising selectively adjusting input voltage levels and/or read timing of a verify circuit.

5. The method of claim 1, wherein adjusting either the first or second read circuit comprises changing a voltage sensitivity of the read circuit.

6. The method of claim 1, further comprising utilizing the first read circuit during one of an erase operation and a program operation.

7. The method of claim 1, further comprising utilizing the second read circuit during a read operation.

8. The method of claim 1, wherein the non-volatile memory is one of a flash memory and a synchronous flash memory.

9. The method of claim 1, wherein determining if an offset of what is read as a programmed and/or erased non-volatile memory cell exists between the first and second read circuits further comprises determining if an offset of what is read as a programmed and/or erased non-volatile memory cell exists between the first and second read circuits with an external test circuit or processor.

10. The method of claim 1, wherein determining if an offset of what is read as a programmed and/or erased non-volatile memory cell exists between the first and second read circuits further comprises determining if an offset of what is read as a programmed and/or erased non-volatile memory cell exists between the first and second read circuits utilizing statistical analysis of the test pattern as read by the first read circuit and/or the test pattern as read by the second read circuit.

11. A method of calibrating sense amplifiers and read paths comprising:

reading a data state of a plurality of memory cells through a first read path with a first sense amplifier;

reading the data state of the plurality of memory cells through a second read path with a second sense amplifier;

comparing outputs of the first and second sense amplifiers to determine offsets between the first read path and first sense amplifier and the second read path and second sense amplifier; and

adjusting input voltage levels and/or read timing of either the first or second sense amplifier to calibrate what is read as a programmed and/or erased memory cell the first read path and first sense amplifier and the second read path and second sense amplifier.

12. The method of claim 11, wherein the first read path and first sense amplifier are used during erase and program operations.

13. The method of claim 11, wherein the second read path and second sense amplifier are used during read operations.

14. The method of claim 11, wherein comparing the outputs of the first and second sense amplifiers is performed by an external test circuit or processor.

15. The method of claim 11, wherein adjusting either the first or second sense amplifier comprises changing a voltage sensitivity of the sense amplifier.

16. The method of claim 11, wherein adjusting either the first or second sense amplifier further comprises selectively adjusting read timing of either the first or second sense amplifier if an offset is determined.

17. The method of claim 11, further comprising selectively adjusting input voltage levels and/or read timing of a verify circuit.

18. A method of calibrating read and write operations of a non-volatile memory comprising:

reading a data state of a plurality of programmed or erased memory cells through a first read path with a first sense amplifier;

reading the data state of the plurality of programmed or erased memory cells through a second read path with a second sense amplifier;

comparing outputs of the first and second sense amplifiers to determine offsets between the first read path and first sense amplifier and the second read path and second sense amplifier; and

adjusting input voltage levels and/or read timing of either the first or second sense amplifier to calibrate what is read as a programmed and/or erased memory cell the first read path and first sense amplifier and the second read path and second sense amplifier.

19. The method of claim 18, wherein the first sense amplifier is a read sense amplifier used during read operations.

20. The method of claim 18, wherein the second sense amplifier is a verify sense amplifier used during erase and program operations.

21. The method of claim 18, wherein comparing outputs of the first and second sense amplifiers to determine offsets between the first read path and first sense amplifier and the second read path and second sense amplifier further comprises selectively coupling the outputs of the first and second sense amplifiers to an output buffer to allow the outputs of the first and second sense amplifiers to be compared by an external tester or processor.

22. The method of claim 18, wherein comparing outputs of the first and second sense amplifiers to determine offsets between the first read path and first sense amplifier and the second read path and second sense amplifier further comprises comparing what is read as a programmed and/or erased memory cell by the first and second sense amplifiers utilizing statistical analysis.

23. The method of claim 18, wherein adjusting either the first or second sense amplifier comprises changing a trim level and/or trigger timing of the sense amplifier.

24. The method of claim 18, wherein adjusting either the first or second sense amplifier further comprises selectively adjusting read timing and/or input voltage level of either the first or second sense amplifier if an offset is determined.

25. The method of claim 18, wherein the non-volatile memory is a synchronous non-volatile memory.