Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same
First Claim
1. A process of fabricating a trench semiconductor device comprising:
- providing a semiconductor material;
forming a trench in said semiconductor material, said trench extending from a surface of said semiconductor material into said semiconductor material;
after forming said trench, directionally depositing a first oxide layer on said semiconductor material, said first oxide layer depositing preferentially on horizontal surfaces so as to form a thick portion in a bottom of said trench and a thin portion on a sidewall of said trench, said thick portion being thicker than said thin portion;
after depositing a first oxide layer, depositing a polysilicon layer, said polysilicon layer filling said trench and overflowing said surface of said semiconductor material;
removing a sufficient amount of said polysilicon layer such that a surface of said polysilicon layer is substantially coplanar with said surface of said semiconductor material, said removing comprising chemical-mechanical polishing;
forming a second oxide layer over said surfaces of said polysilicon layer and said semiconductor material;
forming a mask layer over said second oxide layer; and
etching said second oxide layer through an opening in said mask layer so as to leave a portion of said second oxide layer overlying said surface of said polysilicon layer and a portion of said surface of said semiconductor material.
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Accused Products
Abstract
The a trench semiconductor device such as a power MOSFET the high electric field at the corner of the trench is diminished by increasing the thickness of the gate oxide layer at the bottom of the trench. Several processes for manufacturing such devices are described. In one group of processes a directional deposition of silicon oxide is performed after the trench has been etched, yielding a thick oxide layer at the bottom of the trench. Any oxide which deposits on the walls of the trench is removed before a thin gate oxide layer is grown on the walls. The trench is then filled with polysilicon in or more stages. In a variation of the process a small amount of photoresist is deposited on the oxide at the bottom of the trench before the walls of the trench are etched. Alternatively, polysilicon can be deposited in the trench and etched back until only a portion remains at the bottom of the trench. The polysilicon is then oxidized and the trench is refilled with polysilicon. The processes can be combined, with a directional deposition of oxide being followed by a filling and oxidation of polysilicon. A process of forming a “keyhole” shaped gate electrode includes depositing polysilicon at the bottom of the trench, oxidizing the top surface of the polysilicon, etching the oxidized polysilicon, and filling the trench with polysilicon.
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Citations
14 Claims
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1. A process of fabricating a trench semiconductor device comprising:
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providing a semiconductor material; forming a trench in said semiconductor material, said trench extending from a surface of said semiconductor material into said semiconductor material; after forming said trench, directionally depositing a first oxide layer on said semiconductor material, said first oxide layer depositing preferentially on horizontal surfaces so as to form a thick portion in a bottom of said trench and a thin portion on a sidewall of said trench, said thick portion being thicker than said thin portion; after depositing a first oxide layer, depositing a polysilicon layer, said polysilicon layer filling said trench and overflowing said surface of said semiconductor material; removing a sufficient amount of said polysilicon layer such that a surface of said polysilicon layer is substantially coplanar with said surface of said semiconductor material, said removing comprising chemical-mechanical polishing; forming a second oxide layer over said surfaces of said polysilicon layer and said semiconductor material; forming a mask layer over said second oxide layer; and etching said second oxide layer through an opening in said mask layer so as to leave a portion of said second oxide layer overlying said surface of said polysilicon layer and a portion of said surface of said semiconductor material. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A process of fabricating a trench semiconductor device comprising:
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providing a semiconductor material; forming a trench in said semiconductor material, said trench extending from a surface of said semiconductor material into said semiconductor material; after forming said trench, directionally depositing a first oxide layer on said semiconductor material, said first oxide layer depositing preferentially on horizontal surfaces so as to form a thick portion in a bottom of said trench and a thin portion on a sidewall of said trench, said thick portion being thicker than said thin portion; after depositing a first oxide layer, depositing a polysilicon layer, said polysilicon layer filling said trench and overflowing said surface of said semiconductor material; removing a sufficient amount of said polysilicon layer such that a surface of said polysilicon layer is substantially coplanar with said surface of said semiconductor material, said removing comprising chemical-mechanical polishing; and after removing a sufficient amount of said polysilicon layer, annealing said polysilicon layer to form an oxide cap.
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9. A process of fabricating a trench semiconductor device comprising:
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providing a semiconductor material; forming a trench in said semiconductor material, said trench extending from a surface of said semiconductor material into said semiconductor material; directionally depositing a first oxide layer on said semiconductor material, said first oxide layer depositing preferentially on horizontal surfaces so as to form a first thick portion in a bottom of said trench and a second thick portion over said surface of said semiconductor material, and a thin portion on a sidewall of said trench, said thick portions being thicker than said thin portion; removing said thin portion of said first oxide layer from said sidewall of said trench; growing a gate oxide layer on said sidewall of said trench depositing a first polysilicon layer, said first polysilicon layer filling said trench and overflowing said second thick portion of said first oxide layer; etching a sufficient amount of said first polysilicon layer such that a surface of said first polysilicon layer is located inside said trench; depositing a second polysilicon layer; and etching a sufficient amount of said second polysilicon layer such that a surface of said second polysilicon layer is located adjacent said second thick portion of said first oxide layer. - View Dependent Claims (10, 11, 12, 13)
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14. A process of fabricating a trench semiconductor device comprising:
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providing a semiconductor material; forming a trench in said semiconductor material, said trench extending from a surface of said semiconductor material into said semiconductor material; forming a first dielectric layer in said trench, said first dielectric layer comprising a thick portion lining a bottom of said trench and a thin portion lining a sidewall of said trench, said thick portion being thicker than said thin portion; after forming a first dielectric layer, depositing a polysilicon layer, said polysilicon layer filling said trench and overflowing said surface of said semiconductor material; removing a sufficient amount of said polysilicon layer such that a surface of said polysilicon layer is substantially coplanar with said surface of said semiconductor material; forming a second dielectric layer over said surfaces of said polysilicon layer and said semiconductor material; forming a mask layer over said second dielectric layer; and etching said second dielectric layer through an opening in said mask layer so as to leave a portion of said second dielectric layer overlying said surface of said polysilicon layer and a portion of said surface of said semiconductor material.
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Specification