Wavelength-converting casting composition and white light-emitting semiconductor component

• US 7,276,736 B2
• Filed: 07/10/2003
• Issued: 10/02/2007
• Est. Priority Date: 09/20/1996
• Status: Expired due to Fees

• Current Assignee: OSRAM GmbH (Ams-Osram AG)
• Original Assignee: OSRAM GmbH (Ams-Osram AG)
• Inventors: Schlotter, Peter, Schmidt, Ralf, Schneider, Jürgen, Höhn, Klaus, Debray, Alexandra
• Primary Examiner(s): TRAN, MINH LOAN
• Application Number:
  US10/616,783
• Publication Number:
  US 20040084687A1
• Time in Patent Office: 1,545 Days
• Field of Search: 313501-504, 313/512, 313/486, 257 98-100, 257/E33.061, 257/E33.06, 252/301.4 R, 252/301.4 P, 252/301.36
• US Class Current: 257/98
• CPC Class Codes: C09K 11/7718 with alkaline earth metals
• CPC Class Codes: C09K 11/7746 with alkaline earth metals
• CPC Class Codes: C09K 11/7767 Chalcogenides
• CPC Class Codes: C09K 11/7769 Oxides C09K11/7768 takes precedence
• CPC Class Codes: C09K 11/7774 Aluminates
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/502 : Wavelength conversion materials
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin
• CPC Class Codes: Y02B 20/00 : Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Abstract

The wavelength-converting casting composition is based on a transparent epoxy casting resin with a luminous substance admixed. The composition is used in an electroluminescent component having a body that emits ultraviolet, blue or green light. An inorganic luminous substance pigment powder with luminous substance pigments is dispersed in the transparent epoxy casting resin. The luminous substance is a powder of Ce-doped phosphors and the luminous substance pigments have particle sizes ≦20 μm and a mean grain diameter d₅₀≦5 μm.

Claims

1. Light emitting semiconductor body for use in an LED housing,

said semiconductor body being provided with a layer comprising a wavelength-converting casting composition;

and

said casting composition comprising luminous substance particles;

said luminous substance particles comprising luminous substance pigments selected from the group consisting of garnets doped with rare earths;

thiogallates doped with rare earths;

aluminates doped with rare earths; and

orthohsilicates doped with rare earths; and

said luminous substance pigments having grain sizes ≦

20 μ

m and a median diameter ≦

5 μ

m, wherein 50% of the pigments have a grain diameter greater than said median diameter and 50% of the pigments have a grain diameter less than said median diameter.

2. Semiconductor body according to claim 1, wherein the median diameter of said luminous substance pigments is between 1 and 2 micrometers.

3. Semiconductor body according to claim 1, wherein said luminous substance pigments contain Ce-doped garnet material.

4. Semiconductor body according to claim 1, wherein said luminous substance pigments contain YAG:

Ce material.

5. Semiconductor body according to claim 1, wherein the iron content in the casting composition is ≦

20 ppm.

6. Semiconductor body according to claim 1, wherein the luminous substance pigments are provided with a silicone coating.

7. Semiconductor body according to claim 1, wherein said luminous substance pigments convert radiation from the ultraviolet, blue or green spectral range into light with a relatively longer wavelength.

8. Semiconductor body according to claim 1, wherein said layer containing light-scattering particles.

9. Semiconductor body according to claim 1, wherein said semiconductor body is adapted to emit radiation in a blue spectral range having a maximum luminescence intensity at a wavelength between 420 nm and 460 nm.

10. Semiconductor body according to claim 1, wherein the casting composition further comprises a transparent resin.

11. Semiconductor body according to claim 10, wherein the transparent resin is an epoxy resin.

12. Light emitting semiconductor body for use in an LED housing,

said semiconductor body being provided with a layer comprising a wavelength-converting casting composition;

and

said casting composition comprising luminous substance particles;

said luminous substance particles comprising luminous substance pigments from Ce-doped phosphors; and

said luminous substance pigments having grain sizes ≦

20 μ

m, and a median diameter ≦

5 μ

m, wherein 50% of the pigments have a grain diameter greater than said median diameter and 50% of the pigments have a grain diameter less than said median diameter.

13. Semiconductor body according to claim 12, wherein the median diameter of said luminous substance pigments is between 1 and 2 micrometers.

14. Semiconductor body according to claim 12, wherein the iron content in the casting composition is ≦

20 ppm.

15. Semiconductor body according to claim 12, wherein the luminous substance pigments are provided with a silicone coating.

16. Semiconductor body according to claim 12, wherein said luminous substance pigments convert radiation from the ultraviolet, blue or green spectral range into light with a relatively longer wavelength.

17. Semiconductor body according to claim 12, wherein said layer containing light-scattering particles.

18. Semiconductor body according to claim 12, wherein said semiconductor body is adapted to emit radiation in a blue spectral range having a maximum luminescence intensity at a wavelength between 420 nm and 460 nm.

19. Semiconductor body according to claim 12, wherein the casting composition further comprises a transparent resin.

20. Semiconductor body according to claim 19, wherein the transparent resin is an epoxy resin.