Method and apparatus for improving yield in semiconductor devices by guaranteeing health of redundancy information

• US 7,277,336 B2
• Filed: 12/28/2004
• Issued: 10/02/2007
• Est. Priority Date: 12/28/2004
• Status: Expired due to Fees

• Current Assignee: SanDisk Technologies LLC (Western Digital Corporation)
• Original Assignee: SanDisk 3D LLC (Western Digital Corporation)
• Inventors: Bosch, Derek J., Ilkbahar, Alper
• Primary Examiner(s): Zarabian; Amir
• Assistant Examiner(s): Tran; Anthan T
• Application Number:
  US11/024,516
• Publication Number:
  US 20060140026A1
• Time in Patent Office: 1,008 Days
• Field of Search: 365/200
• US Class Current: 365/200
• CPC Class Codes: G11C 29/76 using address translation or modifications

Abstract

A method is provided comprising reading a set of memory cells indicating whether stored redundancy information is reliable and, if the set of memory cells indicates that the stored redundancy information is reliable, determining whether to read primary memory or redundant memory based on the stored redundancy information. Another method is provided comprising reading a set of memory cells associated with a group of memory cells in a primary memory, the set of memory cells indicating whether data can be reliably stored in the group of memory cells; if the set of memory cells indicates that data can be reliably stored in the group of memory cells, storing data in the group of memory cells; and if the set of memory cells does not indicate that data can be reliably stored in the group of memory cells, storing data in a group of memory cells in a redundant memory. In another preferred embodiment, a method for providing memory redundancy is provided.

Claims

1. A method for writing to memory, the method comprising:

(a) reading a set of memory cells in an area of memory that stores redundancy information for a group of memory cells in a primary memory, the set of memory cells indicating whether the area of memory is able to reliably store redundancy information, if the set of memory cells indicates that the area of memory is able to reliably store redundancy information, performing the following;

(b) reading the redundancy information, the redundancy information indicating whether the group of memory cells in the primary memory is able to reliably store data;

(c) if the redundancy information indicates that the group of memory cells in the primary memory is able to reliably store data, storing data in the group of memory cells in the primary memory; and

(d) if the redundancy information does not indicate that the group of memory cells in the primary memory is able to reliably store data, storing data in a redundant memory wherein the redundancy information comprises a first field for storing an indication of whether the redundant memory was written to, a second field for storing an indication of whether a write operation to the redundant memory was successful, and a third field for storing an address in the redundant memory.

2. The method of claim 1, wherein (d) comprises storing data at an address of redundant memory identified by a direct mapping operation from an address associated with the redundancy information.

3. The method of claim 1, wherein the memory cells are part of a three-dimensional memory array comprising a plurality of layers of memory cells vertically stacked over a silicon substrate.

4. The method of claim 1 further comprising, during sort flow of a memory array comprising the set of memory cells, attempting to program the set of memory cells.

5. The method of claim 1 further comprising, in the field, attempting to program the set of memory cells.

6. The method of claim 1 further comprising:

(e) if the set of memory cells does not indicate that the area of memory is able to reliably store redundancy information, attempting to store the data in a different group of memory cells in the primary memory.

7. A method for writing to memory, the method comprising:

(a) reading a set of memory cells in an area of memory that stores redundancy information for a group of memory cells in a primary memory, the set of memory cells indicating whether the area of memory is able to reliably store redundancy information;

(b) if the set of memory cells indicates that the area of memory is able to reliably store redundancy information, reading redundancy information stored in the area of memory to determine whether to store data in the group of memory cells in the primary memory or in a redundant memory; and

(c) if the set of memory cells does not indicate that the area of memory is able to reliably store redundancy information, attempting to store the data in a different group of memory cells in the primary memory wherein the redundancy information comprises a first field for storing an indication of whether the redundant memory was written to, a second field for storing an indication of whether a write operation to the redundant memory was successful, and a third field for storing an address in the redundant memory.

8. The method of claim 7, wherein the memory cells are part of a three-dimensional memory array comprising a plurality of layers of memory cells vertically stacked over a silicon substrate.

9. The method of claim 7 further comprising, during sort flow of a memory array comprising the set of memory cells, attempting to program the set of memory cells.

10. The method of claim 7 further comprising, in the field, attempting to program the set of memory cells.

11. A method for writing to memory, the method comprising:

(a) reading a set of memory cells associated with a group of memory cells in a primary memory, the set of memory cells indicating whether the group of memory cells in the primary memory is able to reliably store data;

(b) if the set of memory cells indicates that the group of memory cells in the primary memory is able to reliably store data, storing data in the group of memory cells in the primary memory;

(c) if the set of memory cells does not indicate that the group of memory cells in the primary memory is able to reliably store data, storing data in a redundant memory; and

(d) storing redundancy information comprising a first field for storing an indication of whether the redundant memory was written to, a second field for storing an indication of whether a write operation to the redundant memory was successful, and a third field for storing an address in the redundant memory.

12. The method of claim 11 further comprising:

if there is an error in storing the data in (b) or (c), storing the data at a first address in the redundant memory.

13. The method of claim 12, if the data is successfully stored in the first address in the redundant memory, storing an indication that the redundant memory was written to in the first field, storing an indication that the write operation to the redundant memory was successful in the second field, and storing the first address in the third field.

14. The method of claim 12, if there is an error in storing the data in the first address in the redundant memory, generating an error.