Method and apparatus for generating temperature-compensated read and verify operations in flash memories
First Claim
1. A word-line voltage generator, comprising:
- a first current source operably coupled to a current sum node and configured for generating a first current wherein a voltage derived from the first current comprises a temperature coefficient substantially equal to a temperature coefficient of a threshold voltage of at least one bit cell;
an adjustable current source operably coupled to the current sum node and configured for generating a second current that is substantially independent of a temperature change; and
a voltage converter operably coupled to the current sum node and configured for generating a word-line signal having a word-line voltage proportional to a reference current, wherein the reference current comprises a sum of the first current and the second current.
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Abstract
Methods and an apparatuses for generating a word-line voltage are disclosed. A word-line voltage generator includes a first current source, an adjustable current source, adjustable current sink, and a voltage converter, all operably coupled to a current sum node. The first current source generates a first current having a temperature coefficient substantially equal to a temperature coefficient of at least one bit cell. The adjustable current source generates a second current that is substantially independent of a temperature change. The adjustable current sink sinks a third current that is substantially independent of a temperature change. The voltage converter is configured for generating a word-line signal having a word-line voltage proportional to a reference current, wherein the reference current comprises the first current, plus the second current, and minus the third current.
154 Citations
44 Claims
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1. A word-line voltage generator, comprising:
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a first current source operably coupled to a current sum node and configured for generating a first current wherein a voltage derived from the first current comprises a temperature coefficient substantially equal to a temperature coefficient of a threshold voltage of at least one bit cell; an adjustable current source operably coupled to the current sum node and configured for generating a second current that is substantially independent of a temperature change; and a voltage converter operably coupled to the current sum node and configured for generating a word-line signal having a word-line voltage proportional to a reference current, wherein the reference current comprises a sum of the first current and the second current. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A word-line voltage generator, comprising:
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a first current source operably coupled to a current sum node and configured for generating a first current wherein a voltage derived from the first current comprises a temperature coefficient substantially equal to a temperature coefficient of a threshold voltage of at least one bit cell; an adjustable current source operably coupled to the current sum node and configured for generating a second current that is substantially independent of a temperature change; an adjustable current sink operably coupled to the current sum node and configured for sinking a third current that is substantially independent of the temperature change; and a voltage converter operably coupled to the current sum node and configured for generating a word-line signal having a word-line voltage proportional to a reference current, wherein the reference current comprises the first current, plus the second current, and minus the third current. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A method, comprising:
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generating a first current wherein a voltage derived from the first current comprises a temperature coefficient substantially equal to a temperature coefficient of a threshold voltage of at least one bit cell; generating a second current from an adjustable current source, wherein the second current is substantially independent of a temperature change; combining the first current and the second current to generate a reference current; and converting the reference current to a word-line voltage by directing the reference current through a voltage converter. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38)
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39. A semiconductor memory including at least one word-line voltage generator, comprising:
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a first current source operably coupled to a current sum node and configured for generating a first current wherein a voltage derived from the first current comprises a temperature coefficient substantially equal to a temperature coefficient of a threshold voltage of at least one bit cell; an adjustable current source operably coupled to the current sum node and configured for generating a second current that is substantially independent of a temperature change; and a voltage converter operably coupled to the current sum node and configured for generating a word-line signal having a word-line voltage proportional to a reference current, wherein the reference current comprises a sum of the first current and the second current.
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40. A semiconductor memory including at least one word-line voltage generator, comprising:
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a first current source operably coupled to a current sum node and configured for generating a first current wherein a voltage derived from the first current comprises a temperature coefficient substantially equal to a temperature coefficient of a threshold voltage of at least one bit cell; an adjustable current source operably coupled to the current sum node and configured for generating a second current that is substantially independent of a temperature change; an adjustable current sink operably coupled to the current sum node and configured for sinking a third current that is substantially independent of the temperature change; and a voltage converter operably coupled to the current sum node and configured for generating a word-line signal having a word-line voltage proportional to a reference current, wherein the reference current comprises the first current, plus the second current, and minus the third current.
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41. A semiconductor wafer, comprising:
- at least one semiconductor device including at least one word-line voltage generator, comprising;
a first current source operably coupled to a current sum node and configured for generating a first current wherein a voltage derived from the first current comprises a temperature coefficient substantially equal to a temperature coefficient of a threshold voltage of at least one bit cell; an adjustable current source operably coupled to the current sum node and configured for generating a second current that is substantially independent of a temperature change; and a voltage converter operably coupled to the current sum node and configured for generating a word-line signal having a word-line voltage proportional to a reference current, wherein the reference current comprises a sum of the first current and the second current.
- at least one semiconductor device including at least one word-line voltage generator, comprising;
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42. A semiconductor wafer, comprising:
at least one semiconductor device including at least one word-line voltage generator, comprising; a first current source operably coupled to a current sum node and configured for generating a first current wherein a voltage derived from the first current comprises a temperature coefficient substantially equal to a temperature coefficient of a threshold voltage of at least one bit cell; an adjustable current source operably coupled to the current sum node and configured for generating a second current that is substantially independent of a temperature change; an adjustable current sink operably coupled to the current sum node and configured for sinking a third current that is substantially independent of the temperature change; and a voltage converter operably coupled to the current sum node and configured for generating a word-line signal having a word-line voltage proportional to a reference current, wherein the reference current comprises the first current, plus the second current, and minus the third current.
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43. An electronic system, comprising:
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at least one input device; at least one output device; a processor; and a memory device comprising at least one semiconductor memory including at least one word-line voltage generator, comprising; a first current source operably coupled to a current sum node and configured for generating a first current wherein a voltage derived from the first current comprises a temperature coefficient substantially equal to a temperature coefficient of a threshold voltage of at least one bit cell; an adjustable current source operably coupled to the current sum node and configured for generating a second current that is substantially independent of a temperature change; and a voltage converter operably coupled to the current sum node and configured for generating a word-line signal having a word-line voltage proportional to a reference current, wherein the reference current comprises a sum of the first current and the second current.
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44. An electronic system, comprising:
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at least one input device; at least one output device; a processor; and a memory device comprising at least one semiconductor memory including at least one word-line voltage generator, comprising; a first current source operably coupled to a current sum node and configured for generating a first current wherein a voltage derived from the first current comprises a temperature coefficient substantially equal to a temperature coefficient of a threshold voltage of at least one bit cell; an adjustable current source operably coupled to the current sum node and configured for generating a second current that is substantially independent of a temperature change; an adjustable current sink operably coupled to the current sum node and configured for sinking a third current that is substantially independent of the temperature change; and a voltage converter operably coupled to the current sum node and configured for generating a word-line signal having a word-line voltage proportional to a reference current, wherein the reference current comprises the first current, plus the second current, and minus the third current.
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Specification