Dielectric VCSEL gain guide

• US 7,277,461 B2
• Filed: 06/27/2003
• Issued: 10/02/2007
• Est. Priority Date: 06/27/2003
• Status: Expired due to Fees

• Current Assignee: II-VI Delaware, Inc. (Coherent Corp.)
• Original Assignee: Finisar Corporation (II-VI Incorporated)
• Inventors: Park, Gyoungwon, Ryou, Jae-Hyun
• Primary Examiner(s): Harvey; Minsun Oh
• Assistant Examiner(s): Nguyen; Tuan N.
• Application Number:
  US10/607,629
• Publication Number:
  US 20040264536A1
• Time in Patent Office: 1,558 Days
• Field of Search: 372/43.01, 372/45.01, 372/75
• US Class Current: 372/46.01
• CPC Class Codes: H01S 5/0282 Passivation layers or treatments
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18311 using selective oxidation
• CPC Class Codes: H01S 5/18369 based on dielectric materials
• CPC Class Codes: H01S 5/18377 comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
• CPC Class Codes: H01S 5/2004 Confining in the direction perpendicular to the layer structure

Abstract

A vertical cavity surface emitting laser having a dielectric gain guide. The gain guide may provide current confinement, device isolation and possibly optical confinement. The first mirror and an active region may be grown. A pattern may be placed on or near the active region. A dielectric material may be deposited on the pattern and the pattern may be removed resulting in a gain guide. Then a top mirror may be grown on the gain guide. This structure with the dielectric gain guide may have specific characteristics and/or additional features.

Claims

1. A long wavelength vertical cavity surface emitting laser (VCSEL) comprising:

a first mirror comprising In and having at least about 25 mirror pairs;

an active area situated above said first mirror, the active region comprising In and being configured to emit light at a long wavelength in a range from about 1200 nanometers to about 1800 nanometers;

a dielectric layer situated above said active area and defining an electrically confining aperture, the dielectric layer having a configuration and a composition compatible with depositing the dielectric layer using a masking technique, wherein the dielectric layer comprises a dielectric material selected from the group consisting of SiO₂, TiO₂, SiN, and combinations thereof; and

a second mirror above said dielectric gain guide, the second mirror comprising In and having at least about 25 mirror pairs.

2. The VCSEL of claim 1, further comprising:

a substrate; and

wherein said first mirror is situated above said substrate; and

said substrate comprises InP.

3. The VCSEL of claim 2, wherein said non-aluminum dielectric material provides optical confinement.

4. The VCSEL of claim 1, further comprising:

a substrate; and

wherein;

said mirror is situated above said substrate; and

said substrate comprises GaAs.

5. The VCSEL of claim 4, wherein said non-aluminum dielectric material provides optical confinement.

6. The VCSEL of claim 5, wherein said non-aluminum dielectric material is selected from the group consisting of SiO₂, TiO₂, SiN, and combinations thereof.

7. A long wavelength vertical cavity surface emitting laser for providing laser light comprising:

first reflecting means, situated above a substrate, for reflecting light;

active means, situated above said first reflecting means, for converting current to light the active means being configured to emit light at a long wavelength in a range from about 1200 nanometers to about 1800 nanometers;

confinement means, situated above said active means, for confining current, the confinement means having a configuration and a composition compatible with depositing the confinement means using a masking technique, wherein the confinement means comprises a dielectric material selected from the group consisting of SiO₂, TiO₂, SiN, and combinations thereof; and

second reflecting means, situated above said confinement means, for reflecting light, the second reflecting means comprising a plurality of layers comprised of InP, InAlAs, or AlAsSb.

8. The vertical cavity surface emitting laser of claim 7, wherein said first means for reflecting comprises first distributed Bragg reflector layers including one or more materials that are at least nearly lattice matched with the substrate and wherein said second reflecting means comprises second distributed Bragg reflector layers.

9. The vertical cavity surface emitting laser of claim 8, wherein said active means is at least nearly lattice matched with said first means for reflecting.

10. The vertical cavity surface emitting laser of claim 9, wherein the substrate comprises InP.

11. The vertical cavity surface emitting laser of claim 9, wherein the substrate comprises GaAs.