Dielectric VCSEL gain guide
First Claim
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1. A long wavelength vertical cavity surface emitting laser (VCSEL) comprising:
- a first mirror comprising In and having at least about 25 mirror pairs;
an active area situated above said first mirror, the active region comprising In and being configured to emit light at a long wavelength in a range from about 1200 nanometers to about 1800 nanometers;
a dielectric layer situated above said active area and defining an electrically confining aperture, the dielectric layer having a configuration and a composition compatible with depositing the dielectric layer using a masking technique, wherein the dielectric layer comprises a dielectric material selected from the group consisting of SiO2, TiO2, SiN, and combinations thereof; and
a second mirror above said dielectric gain guide, the second mirror comprising In and having at least about 25 mirror pairs.
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Abstract
A vertical cavity surface emitting laser having a dielectric gain guide. The gain guide may provide current confinement, device isolation and possibly optical confinement. The first mirror and an active region may be grown. A pattern may be placed on or near the active region. A dielectric material may be deposited on the pattern and the pattern may be removed resulting in a gain guide. Then a top mirror may be grown on the gain guide. This structure with the dielectric gain guide may have specific characteristics and/or additional features.
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Citations
11 Claims
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1. A long wavelength vertical cavity surface emitting laser (VCSEL) comprising:
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a first mirror comprising In and having at least about 25 mirror pairs; an active area situated above said first mirror, the active region comprising In and being configured to emit light at a long wavelength in a range from about 1200 nanometers to about 1800 nanometers; a dielectric layer situated above said active area and defining an electrically confining aperture, the dielectric layer having a configuration and a composition compatible with depositing the dielectric layer using a masking technique, wherein the dielectric layer comprises a dielectric material selected from the group consisting of SiO2, TiO2, SiN, and combinations thereof; and a second mirror above said dielectric gain guide, the second mirror comprising In and having at least about 25 mirror pairs. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A long wavelength vertical cavity surface emitting laser for providing laser light comprising:
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first reflecting means, situated above a substrate, for reflecting light; active means, situated above said first reflecting means, for converting current to light the active means being configured to emit light at a long wavelength in a range from about 1200 nanometers to about 1800 nanometers; confinement means, situated above said active means, for confining current, the confinement means having a configuration and a composition compatible with depositing the confinement means using a masking technique, wherein the confinement means comprises a dielectric material selected from the group consisting of SiO2, TiO2, SiN, and combinations thereof; and second reflecting means, situated above said confinement means, for reflecting light, the second reflecting means comprising a plurality of layers comprised of InP, InAlAs, or AlAsSb. - View Dependent Claims (8, 9, 10, 11)
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Specification