Thin film transistor array substrate and method of fabricating the same
First Claim
1. A method of fabricating a thin film transistor array substrate, comprising:
- forming a gate pattern on a substrate, the gate pattern including a gate electrode of a thin film transistor, a gate line connected to the gate electrode, and a lower gate pad electrode connected to the gate line;
forming a gate insulating film on the substrate having the gate pattern;
forming a source/drain pattern including a source electrode and a drain electrode of the thin film transistor, a data line connected to the source electrode and a lower data pad electrode connected to the data line, and a semiconductor pattern formed beneath the source/drain pattern there along; and
forming a transparent electrode pattern and a passivation film pattern stacked on remaining areas except for areas at which the transparent electrode pattern is formed,wherein the transparent electrode pattern includes a pixel electrode directly contacting both the drain electrode and the semiconductor pattern and formed on the gate insulating film, and the pixel electrode directly contacts an upper gate pad electrode and the lower gate pad electrode along sides of the upper and lower gate pad electrodes, and the pixel electrode directly contacts an upper data pad electrode and the lower data pad electrode along sides of the upper and lower data pad electrodes.
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Accused Products
Abstract
A thin film transistor array substrate device includes a gate line formed on a substrate, a data line crossing the gate line with a gate insulating pattern position therebetween, a thin film transistor at a crossing of the gate line and the data line, a pixel electrode formed at a pixel region defined by the crossing of the gate line and the data line and connected to the thin film transistor, a gate pad part having a lower gate pad electrode connected to the gate line and an upper gate pad electrode connected to the lower gate pad electrode, a data pad part having a lower data pad electrode connected to the date line and an upper data pad electrode connected to the lower data pad electrode, and a passivation film pattern formed at a region besides the region including the pixel electrode, the upper data pad electrode, and the upper gate pad electrode, wherein the pixel electrode is formed on the gate insulating pattern of the pixel region exposed by the passivation film pattern.
37 Citations
24 Claims
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1. A method of fabricating a thin film transistor array substrate, comprising:
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forming a gate pattern on a substrate, the gate pattern including a gate electrode of a thin film transistor, a gate line connected to the gate electrode, and a lower gate pad electrode connected to the gate line; forming a gate insulating film on the substrate having the gate pattern; forming a source/drain pattern including a source electrode and a drain electrode of the thin film transistor, a data line connected to the source electrode and a lower data pad electrode connected to the data line, and a semiconductor pattern formed beneath the source/drain pattern there along; and forming a transparent electrode pattern and a passivation film pattern stacked on remaining areas except for areas at which the transparent electrode pattern is formed, wherein the transparent electrode pattern includes a pixel electrode directly contacting both the drain electrode and the semiconductor pattern and formed on the gate insulating film, and the pixel electrode directly contacts an upper gate pad electrode and the lower gate pad electrode along sides of the upper and lower gate pad electrodes, and the pixel electrode directly contacts an upper data pad electrode and the lower data pad electrode along sides of the upper and lower data pad electrodes. - View Dependent Claims (2, 3, 4)
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5. A method of fabricating a thin film transistor substrate, comprising:
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preparing a transparent substrate; depositing a first metal film on the substrate and then forming a gate line, a gate electrode and a gate pad through a first mask process; sequentially stacking a first insulating film, an amorphous silicon layer, an n+ amorphous silicon layer and a second metal film on an entire surface of the substrate having the gate electrode and the gate line, and forming a data line vertically crossing the gate line and defining a pixel region together with the gate line, a semiconductor layer having an active layer and an ohmic contact layer, a source/drain electrode, and a data pad through a second mask process; and forming a second insulating film on an entire surface of the substrate having the data line and the source/drain electrode, exposing the first insulating film of the pixel region, the gate pad and the data pad through a third mask process, depositing a transparent conductive film on an upper portion of the first insulating film, the gate pad and the data pad, to thereby form a pixel electrode directly contacting both the drain electrode and the ohmic contact layer, directly contacting a gate connection terminal and the gate pad along sides of the gate connection terminal and gate pad, and directly contacting a data connection terminal and the data pad along sides of the data connection terminal and data pad. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of fabricating a thin film transistor array substrate, comprising:
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preparing a transparent substrate; forming a gate line, a gate electrode, and a gate pad on the substrate; forming a gate insulating film along an entire surface of the substrate having the gate electrode and the gate pad; forming a data line to vertically cross the gate line and defining a pixel region together with the gate line, a semiconductor layer having an active layer and an ohmic contact layer, a source/drain electrode, and a data pad, the data pad includes portions of the semiconductor layer and the ohmic layer; exposing the gate insulating film formed at each pixel region; forming a passivation film along an entire surface of the substrate having the data line and the source/drain electrode; applying a photo-resist film to an upper portion of the passivation film; forming a photo-resist pattern on the passivation film by using a mask; forming a contact hole exposing each of the gate pad and the data pad by using the photo-resist pattern as a mask for etching, and exposing the gate insulating film of the pixel region; depositing a transparent conductive film along an entire surface of the substrate having the photo-resist pattern, the gate insulating film of the pixel region and the contact hole; removing the photo-resist pattern and the transparent conductive film formed on the photo-resist pattern to form a pixel electrode directly contacting the gate insulating film of the pixel region parallel to the entire surface of the substrate, and forming a gate connection terminal and a data connection terminal respectively connected via the contact hole to the gate pad and the data pad, the data connection terminal contacting the side regions of the portions of the semiconductor layer and the ohmic contact layer of the data pad. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24)
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Specification