Liquid crystal display device and method of fabricating the same
First Claim
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1. A fabricating method of a liquid crystal display device, comprising:
- forming an amorphous silicon on a substrate;
forming a poly-silicon pattern in the amorphous silicon by partially crystallizing the amorphous silicon; and
simultaneously etching the amorphous silicon and the poly-silicon pattern using an etching ratio of the amorphous silicon and the poly-silicon pattern to remove the amorphous silicon and leave the poly-silicon pattern on the substrate in absence of a photo-resist.
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Abstract
There is disclosed a liquid crystal display device and a fabricating method thereof that reduce the number of processes and production cost. A liquid crystal display device and a fabricating method thereof according to an embodiment of the present invention forms a poly-silicon pattern by partially crystallizing an amorphous silicon, and simultaneously etches the amorphous silicon and the poly-silicon pattern, thereby removing the amorphous silicon and leaving the poly-silicon pattern on the substrate.
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Citations
13 Claims
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1. A fabricating method of a liquid crystal display device, comprising:
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forming an amorphous silicon on a substrate; forming a poly-silicon pattern in the amorphous silicon by partially crystallizing the amorphous silicon; and simultaneously etching the amorphous silicon and the poly-silicon pattern using an etching ratio of the amorphous silicon and the poly-silicon pattern to remove the amorphous silicon and leave the poly-silicon pattern on the substrate in absence of a photo-resist. - View Dependent Claims (2, 3)
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4. A fabricating method of a liquid crystal display device, comprising:
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forming a buffer layer on a substrate; forming an amorphous silicon on the buffer layer; forming a poly-silicon pattern by partially irradiating a laser beam on the amorphous silicon and inducing the growth of crystal from the side surface of an area on which the laser beam is irradiated; and simultaneously etching the amorphous silicon and the poly-silicon using an etching ratio of the amorphous silicon and the poly-silicon pattern to remove the amorphous silicon and leave the poly-silicon pattern on the substrate in absence of a photo-resist pattern. - View Dependent Claims (5, 6, 7)
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8. A fabricating method of a liquid crystal display device having a plurality of thin film transistors, comprising:
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forming an amorphous silicon layer on a substrate; partially crystallizing the amorphous silicon layer using a laser annealing method, wherein the partially crystallized silicon layer has a poly-silicon region and an amorphous silicon region; and etching the partially crystallized silicon layer to remove the amorphous silicon region and leave the poly-silicon region on the substrate without using a photo-resist pattern. - View Dependent Claims (9, 10, 11, 12, 13)
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Specification