Light emitting device

• US 7,279,717 B2
• Filed: 03/07/2006
• Issued: 10/09/2007
• Est. Priority Date: 09/21/1998
• Status: Expired due to Fees

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Yamada, Motokazu
• Primary Examiner(s): JACKSON JR, JEROME
• Application Number:
  US11/368,408
• Publication Number:
  US 20060237733A1
• Time in Patent Office: 581 Days
• Field of Search: 257/97, 257/13
• US Class Current: 257/97
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A light emitting device includes an active layer, having a multiple quantum well structure, sandwiched between an n-type semiconductor layer and a p-type semiconductor layer. The active layer includes first and second well layers made of a nitride compound semiconductor containing In, where the second well layer emits light having a main peak wavelength which is longer than that of the first well layer. The active layer also includes an intervening barrier layer disposed between the first and second well layers, and first and second barrier layers. The first well layer isg sandwiched between the first barrier layer and the intervening barrier layer, and the second well layer is sandwiched between the second barrier layer and the intervening barrier layer. A thickness of said first barrier layer is different than a thickness of said second barrier layer.

Claims

1. A light emitting device comprising:

an active layer, having a multiple quantum well structure, sandwiched between an n-type semiconductor layer and a p-type semiconductor layer;

said active layer including,

at least one first well layer made of a nitride compound semiconductor containing In, and

at least one second well layer made of a nitride compound semiconductor containing In, said second well layer emitting light having a main peak wavelength which is longer than that of said first well layer, and

a plurality of barrier layers including a first barrier layer, a second barrier layer and a third barrier layer,

wherein said first barrier layer, said first well layer, said second barrier layer, said second well layer and said third barrier layer are laminated in order, and

wherein a thickness of each of said first and second barrier layers is greater than a thickness of said third barrier layer.

2. The light emitting device according to claim 1, wherein said second well layer is disposed between said first well layer and said p-type semiconductor layer.

3. The light emitting device according to claim 2, wherein the thickness of said first barrier layer is the same as the thickness of said second barrier layer.

4. The light emitting device according to claim 2, wherein the thickness of each the first and second well layers is not greater than 100 angstroms.

5. The light emitting device according to claim 3, wherein the thickness of each of the barrier layers is greater than a thickness of each of the first and second well layers.

6. The light emitting device according to claim 2, wherein a light spectrum of the light emitted by said first well layer is a half-width narrower than that emitted by said second well layer.

7. The light emitting device according to claim 2, wherein the main peak wavelength of the light emitted by said first well layer is in the range of 450 to 500 nm, and wherein the main peak wavelength of the light emitted by said second well layer is within the range of 560 to 670 nm.

8. The light emitting device according to claim 2, wherein a growth number of said first well layer is greater than that of said second well layer.

9. A light emitting device comprising:

an active layer, having a multiple quantum well structure, sandwiched between an n-type semiconductor layer and a p-type semiconductor layer;

said active layer including,

at least one first well layer made of a nitride compound semiconductor containing In, and

at least one second well layer made of a nitride compound semiconductor containing In, said second well layer emitting light having a main peak wavelength which is longer than that of said first well layer, and

a plurality of barrier layers including a first barrier layer, a second barrier layer and a third barrier layer,

wherein said first barrier layer, said first well layer, said second barrier layer, said second well layer and said third barrier layer are laminated in order, and

wherein a thickness of each of said second and third barrier layers is less than a thickness of said first barrier layer.

10. The light emitting device according to claim 9, wherein said second well layer is disposed between said first well layer and said p-type semiconductor layer.

11. The light emitting device according to claim 10, wherein the second and third barrier layers have the same thickness.

12. The light emitting device according to claim 10, wherein a thickness of each of the first and second well layers is not greater than 100 angstroms.

13. The light emitting device according to claim 12, wherein the thickness of each of the barrier layers is greater than a thickness of each of the first and second well layers.

14. The light emitting device according to claim 10, wherein a light spectrum of the light emitted by said first well layer is a half-width narrower than that emitted by said second well layer.

15. The light emitting device according to claim 10, wherein the main peak wavelength of the light emitted by said first well layer is in the range of 450 to 500 nm, and wherein the main peak wavelength of the light emitted by said second well layer is within the range of 560 to 670 nm.

16. The light emitting device according to claim 10, wherein a growth number of said first well layer is greater than that of said second well layer.