LED including photonic crystal structure

• US 7,279,718 B2
• Filed: 01/28/2002
• Issued: 10/09/2007
• Est. Priority Date: 01/28/2002
• Status: Expired due to Term

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Philips Lumileds Lighting Company LLC (Apollo Global Management, Inc.), Avago Technologies General IP PTE Limited (Broadcom, Inc.)
• Inventors: Krames, Michael R., Wierer, Jonathan J. Jr., Sigalas, Mihail M.
• Primary Examiner(s): LOUIE, WAI SING
• Application Number:
  US10/059,588
• Publication Number:
  US 20030141507A1
• Time in Patent Office: 2,080 Days
• Field of Search: 257/79
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: Y10S 438/943 Movable

Abstract

A photonic crystal light emitting diode (“PXLED”) is provided. The PXLED includes a periodic structure, such as a lattice of holes, formed in the semiconductor layers of an LED. The parameters of the periodic structure are such that the energy of the photons, emitted by the PXLED, lies close to a band edge of the band structure of the periodic structure. Metal electrode layers have a strong influence on the efficiency of the PXLEDs. Also, PXLEDs formed from GaN have a low surface recombination velocity and hence a high efficiency. The PXLEDs are formed with novel fabrication techniques, such as the epitaxial lateral overgrowth technique over a patterned masking layer, yielding semiconductor layers with low defect density. Inverting the PXLED to expose the pattern of the masking layer or using the Talbot effect to create an aligned second patterned masking layer allows the formation of PXLEDs with low defect density.

Claims

1. A light emitting diode comprising:

a first semiconductor layer doped with a first dopant, coupled to a first electrode layer;

an active layer overlying said first semiconductor layer, capable of emitting light;

a second semiconductor layer doped with a second dopant, overlying said active layer, said first dopant and said second dopant being of opposite type;

a second electrode layer on said second semiconductor layer; and

a periodically-arranged plurality of holes formed in the second semiconductor layer and extending towards the first semiconductor layer, wherein

the ratio of the period of said periodic arrangement and the wavelength of said emitted light in air is greater than about 0.1 and less than about 5;

a depth of at least one of the plurality of holes is such that a thickness of said second semiconductor layer at a bottom of said at least one of the plurality of the holes is less than about one wavelength of said emitted light in said second semiconductor layer;

a portion of the second electrode layer is disposed in a region of the second semiconductor layer in which a portion of the plurality of holes are formed; and

when forward biased, light is emitted from at least a portion of the active layer disposed beneath a portion of the second electrode.

2. The light emitting diode of claim 1, wherein

said first dopant is n-type and said second dopant is p-type.

3. The light emitting diode of claim 1, wherein

said first semiconductor layer overlies said first electrode layer.

4. The light emitting diode of claim 1, wherein

said first electrode layer partially overlies said first semiconductor layer;

and

said first semiconductor layer overlies a substrate with a reflective surface.

5. The light emitting diode of claim 1, wherein

said first electrode layer partially overlies said first semiconductor layer;

said second electrode layer is reflective; and

said first semiconductor layer overlies a transparent substrate.

6. The light emitting diode of claim 1, wherein

a surface in one of the plurality of holes has a surface recombination velocity less than 10⁵ cm/sec.

7. The light emitting diode of claim 1, wherein

said first semiconductor layer, said active layer, and said second semiconductor layer comprise a group III element and a group V element.

8. The light emitting diode of claim 1, wherein

said first semiconductor layer, said active layer, and said second semiconductor layer comprise GaN.

9. The light emitting diode of claim 1, wherein

said periodically-arranged plurality of holes is periodic in at least one direction parallel to a plane of said second semiconductor layer.

10. The light emitting diode of claim 1, wherein

said periodic arrangement comprises a planar lattice of holes.

11. The light emitting diode of claim 10, wherein

said planar lattice is a triangular lattice, square lattice, or a hexagonal lattice.

12. The light emitting diode of claim 10, wherein

said planar lattice is a honeycomb lattice.

13. The light emitting diode of claim 12, wherein

said emitted light has an intensity and a polarization and the intensity of said emitted light is substantially independent of the polarization.

14. The light emitting diode of claim 1, wherein

said holes are filled with a dielectric.

15. The light emitting diode of claim 14, wherein

said dielectric is silicon oxide.

16. The light emitting diode of claim 1, wherein

the periodically-arranged plurality of holes form a photonic crystal having a photonic crystal band structure comprising one or more bands with edges;

and

an energy of said emitted light lies close to an edge of a band of the photonic crystal band structure.

17. The light emitting diode of claim 16, wherein

the product of a rate of spontaneous emission of the light emitting diode and an efficiency of light extraction of the light emitting diode is greater at an energy close to said band edge than at a plurality of energies away from said band edge.

18. The light emitting diode of claim 14, wherein

the dielectric constants of said dielectric, said active layer and said second semiconductor layer assume values between about 1 and about 14;

and

said holes occupy between about 10% and about 50% of the area of said second semiconductor layer.

19. The light emitting diode of claim 1, wherein

an intensity of light emitted in a direction normal to a plane of said second semiconductor layer is greater than an intensity of light emitted in a direction different from the normal of the plane of said second semiconductor layer.

20. The light emitting diode of claim 1, wherein

said first semiconductor layer and said second semiconductor layer each comprise at least one layer of a III-nitride material;

said active layer comprises InGaN;

said first and second electrode layers comprise at least one of Ag, Al, and Au;

said periodically-arranged plurality of holes is a triangular lattice of holes, wherein

a diameter of said holes is between about 0.3 a and about 0.72 a, wherein

a is the period of the periodic arrangement;

a depth of said holes is between about 0.375 a and about 2 a; and

said first and second semiconductor layers together form an epi-layer, having a thickness between about 0.375 a and about 2 a.

21. The light emitting diode of claim 1, wherein

said first semiconductor layer and said second semiconductor layer each comprise at least one layer of a III-nitride material;

said active layer comprises InGaN;

said first and second electrode layers comprise at least one of Ag, Al, and Au;

said periodically-arranged plurality of holes is a triangular lattice of holes, wherein

a diameter of said holes is between about 0.3 a and about 0.72 a, wherein

a is the period of the periodic arrangement;

a depth of said holes is greater than about 2 a; and

said first and second semiconductor layers together have a thickness greater than about 4 a.

22. The light emitting diode of claim 1, wherein

said light emitting diode is disposed in a package, the package comprising:

a support frame;

a heat sink disposed within said support frame for extracting heat from said light emitting diode, wherein

said light emitting diode is disposed over said heat sink;

a plurality of leads, electrically coupled to said light emitting diode; and

a transparent housing overlying the light emitting diode.

43. The light emitting diode of claim 1, wherein at least one of the holes extends through the second semiconductor layer and into the active region.

44. The light emitting diode of claim 1, wherein at least one of the holes extends through the second semiconductor layer, through the active region, and into the first semiconductor layer.

45. The light emitting diode of claim 1, wherein the periodically arranged plurality of holes comprises parallel grooves.

49. The light emitting diode of claim 20, wherein a diameter of said holes is about 0.72 a and said holes are filled with air.

50. The light emitting diode of claim 20, wherein said light, emitted by said active layer, has a frequency between about 0.66(c/a) and about 0.75(c/a), wherein c is the speed of light in air.

51. The light emitting diode of claim 21, wherein said holes are filled with air.

52. The light emitting diode of claim 21, wherein said light, emitted by said active layer has a frequency in one of the ranges of about 0.2(c/a) to about 0.4(c/a) and about 0.5(c/a) to about 0.8(c/a), wherein c is the speed of light in air.

23. A light emitting diode comprising:

a first semiconductor layer doped with a first dopant, coupled to a first electrode layer;

an active layer overlying said first semiconductor layer, capable of emitting light;

a second semiconductor layer doped with a second dopant overlying said active layer, said first and second dopants being of opposite type;

a second electrode layer on said second semiconductor layer; and

a periodically-arranged plurality of holes formed in the second semiconductor layer and extending towards the first semiconductor layer, wherein;

the ratio of the period of said periodic arrangement and the wavelength of said emitted light in air is greater than about 0.1 and less than about 5;

a depth of at least one of the plurality of holes is such that the thickness of said second semiconductor layer at a bottom of said at least one of the plurality of holes is less than about one wavelength of said emitted light in said second semiconductor layer;

a portion of the second electrode layer is disposed in a region of the second semiconductor layer in which a portion of the plurality of holes are formed;

when forward biased, light is emitted from at least a portion of the active layer disposed beneath a portion of the second electrode; and

at least one of said first semiconductor layer, said active layer, and said second semiconductor layer composes a group III element and nitrogen.

24. The light emitting diode of claim 23, wherein said group III element is Gallium.

25. The light emitting diode of claim 23, wherein

a surface in one of the plurality of holes has a surface recombination velocity less than 10⁵ cm/sec.

26. The light emitting diode of claim 23, wherein

said first dopant is n-type and said second dopant is p-type.

27. The light emitting diode of claim 23 wherein said first semiconductor layer overlies said first electrode layer.

28. The light emitting diode of claim 23, wherein

said first electrode layer partially overlies said first semiconductor layer;

and

said first semiconductor layer overlies a substrate with a reflective surface.

29. The light emitting diode of claim 23, wherein

said first electrode layer partially overlies said first semiconductor layer;

said second electrode layer is reflective; and

said first semiconductor layer overlies a transparent substrate.

30. The light emitting diode of claim 23, wherein

said periodically-arranged plurality of holes is periodic in at least one direction parallel to a plane of said second semiconductor layer.

31. The light emitting diode of claim 23, wherein

said periodic arrangement comprises a planar lattice of holes.

32. The light emitting diode of claim 31, wherein

said planar lattice is a triangular lattice, a square lattice, or a hexagonal lattice.

33. The light emitting diode of claim 31, wherein

said planar lattice is a honeycomb lattice.

34. The light emitting diode of claim 33, wherein

said emitted light has an intensity and a polarization and the intensity of said emitted light is independent of the polarization.

35. The light emitting diode of claim 23, wherein

said holes are filled with a dielectric.

36. The light emitting diode of claim 35, wherein

said dielectric is silicon oxide.

37. The light emitting diode of claim 23, wherein

the periodically-arranged plurality of holes form a photonic crystal having a photonic crystal band structure comprising one or more bands with edges;

and

an energy of said emitted light lies close to an edge of a band of the photonic crystal band structure.

38. The light emitting diode of claim 37, wherein

the product of a rate of spontaneous emission of the light emitting diode and an efficiency of light extraction of the light emitting diode is greater at an energy close to said band edge than at a plurality of energies away from said band edge.

39. The light emitting diode of claim 35, wherein

dielectric constants of said dielectric, said first semiconductor layer, and said second semiconductor layer assume values between about 1 and about 16;

and

said holes occupy between about 10% and about 50% of the area of said second semiconductor layer.

40. The light emitting diode claim of 23, wherein

an intensity of light emitted in a direction normal to a plane of said second semiconductor layer is greater than an intensity of light emitted in a direction different from a normal of the plane of said second semiconductor layer.

41. The light emitting diode of claim 23, wherein

said first semiconductor layer and said second semiconductor layer each comprise at least one layer of a III-nitride material;

said active layer comprises InGaN;

said periodically-arranged plurality of holes is a triangular lattice of holes, wherein

a diameter of said holes is between about 0.3 a and about 0.72 a, wherein

a is the period of the periodically-arranged plurality of holes;

a depth of said holes is between about 0.375 a and about 2 a; and

said first and second semiconductor layers together form an epi-layer, having a thickness between about 0.375 a and about 2 a.

42. The light emitting diode of claim 23, wherein

said first semiconductor layer and said second semiconductor layer each comprise at least one layer of a III-nitride material;

said active layer comprises InGaN;

said periodically-arranged plurality of holes is a triangular lattice of holes, wherein

a diameter of said holes is between about 0.3 a and about 0.72 a, wherein

a is the period of the periodically-arranged plurality of holes;

a depth of said holes is greater than about 2 a; and

said first and second semiconductor layers together have a thickness greater than about 4 a.

46. The light emitting diode of claim 23, wherein at least one of the holes extends through the second semiconductor layer and into the active region.

47. The light emitting diode of claim 23, wherein at least one of the holes extends through the second semiconductor layer, through the active region, and into the first semiconductor layer.

48. The light emitting diode of claim 23, wherein the periodically arranged plurality of holes comprises parallel grooves.

53. The light emitting diode of claim 41, wherein a diameter of said holes is about 0.72 a and said holes are filled with air.

54. The light emitting diode of claim 41, wherein said light, emitted by said active layer, has a frequency between about 0.66(c/a) and about 0.75(c/a), wherein c is the speed of light in air.

55. The light emitting diode of claim 42, wherein said holes are filled with air.

56. The light emitting diode of claim 42, wherein said light, emitted by said active layer has a frequency in one of the ranges of about 0.2(c/a) to about 0.4(c/a) and about 0.5(c/a) to about 0.8(c/a), wherein c is the speed of light in air.