Closed cell trench metal-oxide-semiconductor field effect transistor
First Claim
1. A closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET) comprising:
- a drain region;
a body region disposed above said drain region;
a gate region disposed within said body region;
a gate insulator region disposed about a periphery of said gate region;
a plurality of source regions disposed along the surface of said body region proximate a periphery of said gate insulator region;
wherein a first portion of said gate region and a first portion of said gate insulator region are formed as a substantially parallel elongated structure;
wherein a second portion of said gate region and a second portion of said gate insulator region are formed as a normal-to-parallel structure;
wherein a first portion of said drain region overlaps said parallel structure; and
wherein a second portion of said drain region is separated from said normal-to-parallel structure.
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Accused Products
Abstract
Embodiments of the present invention provide an improved closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The closed cell TMOSFET comprises a drain, a body region disposed above the drain region, a gate region disposed in the body region, a gate insulator region, a plurality of source regions disposed at the surface of the body region proximate to the periphery of the gate insulator region. A first portion of the gate region and the gate oxide region are formed as parallel elongated structures. A second portion of the gate region and the oxide region are formed as normal-to-parallel elongated structures. A portion of the gate and drain overlap region are selectively blocked by the body region, resulting in lower overall gate to drain capacitance.
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Citations
13 Claims
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1. A closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET) comprising:
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a drain region; a body region disposed above said drain region; a gate region disposed within said body region; a gate insulator region disposed about a periphery of said gate region; a plurality of source regions disposed along the surface of said body region proximate a periphery of said gate insulator region; wherein a first portion of said gate region and a first portion of said gate insulator region are formed as a substantially parallel elongated structure; wherein a second portion of said gate region and a second portion of said gate insulator region are formed as a normal-to-parallel structure; wherein a first portion of said drain region overlaps said parallel structure; and wherein a second portion of said drain region is separated from said normal-to-parallel structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET) comprising:
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a plurality of open gate-drain regions arranged in a first plurality of parallel regions; and a plurality of closed gate-drain regions arranged in a second plurality of parallel regions normal to said open gate-drain regions. - View Dependent Claims (12, 13)
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Specification