Semiconductor device with high-k gate dielectric and quasi-metal gate, and method of forming thereof

• US 7,279,756 B2
• Filed: 07/20/2005
• Issued: 10/09/2007
• Est. Priority Date: 07/21/2004
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Hu, Chenming, Wang, Chih-Hao, Tsai, Ching-Wei
• Primary Examiner(s): Pert; Evan
• Assistant Examiner(s): MANDALA, VICTOR A
• Application Number:
  US11/185,443
• Publication Number:
  US 20060017112A1
• Time in Patent Office: 811 Days
• Field of Search: 257/369, 257/371, 257/410, 257/411
• US Class Current: 257/369
• CPC Class Codes: H01L 21/28123 Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
• CPC Class Codes: H01L 21/28194 by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition H01L21/28202 takes precedence
• CPC Class Codes: H01L 21/28202 in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
• CPC Class Codes: H01L 29/7833 with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's for thin film transistors H01L29/78618

Abstract

A process and apparatus for a semiconductor device is provided. A device comprises a first transistor having a first charge carrier type. The first transistor comprises a high-k gate dielectric and a first doped electrode. The first charge carrier type comprises one of p-type and n-type and the first doped electrode comprises the other of p-type and n-type. The device further comprises a second transistor having a charge carrier type opposite the first charge carrier type. The second transistor comprises the high-k gate dielectric, and a second doped electrode, wherein the second doped electrode comprises the other of p-type and n-type.

Claims

1. A semiconductor device comprising:

a first transistor comprising

a first-transistor n-type channel,

a first-transistor high-k gate dielectric formed over the first-transistor n-type channel, and

a first-transistor n-type doped gate electrode formed over the first-transistor high-k gate dielectric; and

a second transistor comprising

a second-transistor p-type channel,

a second-transistor high-k gate dielectric formed over the second-transistor p-type channel, and

a second-transistor n-type doped gate electrode formed over the second-transistor high-k gate dielectric.

2. The semiconductor device according to claim 1, wherein the first-transistor high-k gate dielectric comprises a high-k gate dielectric material having a dielectric constant greater than 3.9, and wherein the second-transistor high-k gate dielectric comprises the high-k gate dielectric material.

3. The semiconductor device of claim 2, wherein the high-k gate dielectric material comprises aluminum oxide, hafnium oxide, or combinations thereof.

4. The semiconductor device of claim 2, wherein an effective oxide thickness for the high-k gate dielectric material is less than about 2 nm.

5. The semiconductor device of claim 2, wherein the high-k gate dielectric material comprises a material selected from the group consisting of silicon, silicon nitride, tantalum, lanthanum, hafnium, aluminum, oxides, and combinations thereof.

6. The semiconductor device of claim 1, wherein the first and second transistor doped gate electrodes comprise a material selected from the group consisting of silicon, germanium, polysilicon, amorphous silicon, and combinations thereof.

7. The semiconductor device according to claim 1, wherein the first-transistor n-type channel comprises a material selected from the group consisting of silicon, germanium, carbon, strained silicon, strained carbon, strained germanium, strained silicon germanium, and combinations thereof.

8. The semiconductor device of claim 1, wherein an n-type gate doping concentration of the first-transistor n-type doped gate electrode is greater than that of the second-transistor n-type doped gate electrode.

9. The semiconductor device of claim 8, wherein a net of the n-type gate doping concentration for the second-transistor n-type doped gate electrode is at least two times smaller than that of the first-transistor n-type doped gate electrode.

10. The semiconductor device of claim 1, wherein the first-transistor gate electrode and/or the second-transistor gate electrode comprise metal.

11. A semiconductor device comprising:

a first transistor comprising

a first-transistor p-type channel,

a first-transistor high-k gate dielectric formed over the first-transistor p-type channel, and

a first-transistor p-type doped gate electrode formed over the first-transistor high-k gate dielectric; and

a second transistor comprising

a second-transistor n-type channel,

a second-transistor high-k gate dielectric formed over the second-transistor n-type channel, and

a second-transistor p-type doped gate electrode formed over the second-transistor high-k gate dielectric;

and wherein a gate doping concentration is different for the n-channel device and for the p-channel device.

12. The semiconductor device according to claim 11, wherein the high-k gate dielectric comprises a material having a gate dielectric constant greater than 3.9, wherein the first-transistor high-k gate dielectric comprises a high-k gate dielectric material having a dielectric constant greater than 3.9, and wherein the second-transistor high-k gate dielectric comprises the high-k gate dielectric material.

13. The semiconductor device of claim 12, wherein the high-k gate dielectric material comprises aluminum oxide, hafnium oxide, or combinations thereof.

14. The semiconductor device of claim 12, wherein an effective oxide thickness for the high-k gate dielectric material is less than about 2 nm.

15. The semiconductor device of claim 11, wherein an p-type gate doping concentration of the first-transistor p-type doped gate electrode is greater than that of the second-transistor p-type doped gate electrode.

16. The semiconductor device of claim 15, wherein a net of the p-type gate doping concentration for the second-transistor p-type doped gate electrode is at least two times smaller than that of the first-transistor p-type doped gate electrode.

17. The semiconductor device of claim 11, wherein the first-transistor gate electrode and/or the second-transistor gate electrode comprise metal.

18. A semiconductor device comprising:

a first transistor comprising

a first-transistor channel having a first-type of doping,

a first-transistor high-k gate dielectric formed over the first-transistor channel, and

a first-transistor gate electrode formed over the first-transistor high-k gate dielectric, the first-transistor gate electrode having the first-type of doping; and

a second transistor comprising

a second-transistor channel having a second-type of doping, the second-type of doping being different from the first-type of doping,

a second-transistor high-k gate dielectric formed over the second-transistor channel, and

a second-transistor gate electrode formed over the second-transistor high-k gate dielectric, the second-transistor gate electrode having the first-type of doping,

wherein the first-type of doping is p-type or n-type,

wherein the second-type of doping is p-type or n-type,

but if the first-type of doping is p-type, then the second-type of doping is n-type,

and if the first-type of doping is n-type, then the second-type is p-type, and

wherein the first-type gate doping concentration of the first-transistor gate electrode is greater than that of the second-transistor gate electrode.

19. The semiconductor device of claim 18, wherein a net of the first-type gate doping concentration for the second-transistor gate electrode is at least two times smaller than that of the first-transistor gate electrode.