Method of forming an MOS transistor and structure therefor
First Claim
Patent Images
1. A method of forming an MOS transistor comprising:
- providing a substrate having a first conductivity type and having a first surface;
forming a first doped region of a second conductivity type within at least a portion of the substrate and having a first peak doping concentration;
forming a second doped region of the first conductivity type overlying at least a portion of the first doped region and having a second peak doping that is no greater than the first peak doping concentration;
forming a third doped region of the first conductivity type overlying at least a portion of the second doped region and having a third peak doping concentration that is greater than the second peak doping concentration; and
forming an opening into the substrate with the opening having a sidewall juxtaposed to the first doped region and the second doped region.
6 Assignments
0 Petitions
Accused Products
Abstract
In one embodiment, an MOS transistor is formed with trench gates. The gate structure of the trench gates generally has a first insulator that has a first thickness in one region of the gate and a second thickness in a second region of the gate.
67 Citations
16 Claims
-
1. A method of forming an MOS transistor comprising:
-
providing a substrate having a first conductivity type and having a first surface; forming a first doped region of a second conductivity type within at least a portion of the substrate and having a first peak doping concentration; forming a second doped region of the first conductivity type overlying at least a portion of the first doped region and having a second peak doping that is no greater than the first peak doping concentration; forming a third doped region of the first conductivity type overlying at least a portion of the second doped region and having a third peak doping concentration that is greater than the second peak doping concentration; and forming an opening into the substrate with the opening having a sidewall juxtaposed to the first doped region and the second doped region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method of forming an MOS transistor comprising:
-
forming a channel region having a first conductivity type and having a first peak doping concentration; forming a current carrying region of a second conductivity type overlying the channel region and having a second peak doping concentration that is no greater than the first peak doping concentration; forming a first doped region overlying the current carrying region and having a third peak doping concentration; and forming a trench gate structure having a first insulator of a first thickness juxtaposed to the channel region and having a second insulator of a greater thickness juxtaposed to a portion of the current carrying region. - View Dependent Claims (10, 11, 12, 13)
-
-
14. A method of forming an MOS transistor comprising:
-
providing a semiconductor substrate of a first conductivity type having a first surface; forming a channel region of a second conductivity type on the first surface; forming a current carrying region of the first conductivity type overlying the channel region; forming a trench gate structure extending from the first surface into the channel region and having a insulator of a first thickness juxtaposed to the channel region; forming a first conductor within the trench gate structure adjacent to the insulator; and forming a second conductor within the trench gate structure electrically connected to the first conductor wherein the second conductor has a lower resistivity than the first conductor. - View Dependent Claims (15, 16)
-
Specification