Switched uniformity control

• US 7,282,454 B2
• Filed: 08/15/2003
• Issued: 10/16/2007
• Est. Priority Date: 06/30/2000
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Steger, Robert J., Gottscho, Richard A.
• Primary Examiner(s): Meeks; Timothy
• Assistant Examiner(s): TUROCY, DAVID P
• Application Number:
  US10/642,463
• Publication Number:
  US 20040031564A1
• Time in Patent Office: 1,523 Days
• Field of Search: 427/248.1, 427/255.28, 427/255.23
• US Class Current: 438/714
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

A component delivery mechanism for distributing a component inside a process chamber is disclosed. The component is used to process a work piece within the process chamber. The component delivery mechanism includes a plurality of component outputs for outputting the component to a desired region of the process chamber. The component delivery mechanism further includes a spatial distribution switch coupled to the plurality of component outputs. The spatial distribution switch is arranged for directing the component to at least one of the plurality of component outputs. The component delivery mechanism also includes a single component source coupled to the spatial distribution switch. The single component source is arranged for supplying the component to the spatial distribution switch.

Claims

1. A method for processing a semiconductor substrate, said method comprising:

continuously delivering plasma forming components to a process chamber;

via time multiplexing, selectively switching the delivery of the plasma forming components back and forth between a first delivery condition where the plasma forming components are only delivered to an inner region of the process chamber, and a second delivery condition where the plasma forming components are only delivered to an outer region of the process chamber so as to effect the concentration of the plasma forming component in an inner and an outer region of the process chamber, the first delivery condition allowing the plasma forming components to be delivered into an inner region of a process chamber while at the same time preventing the same plasma forming components from being delivered into an outer region of the process chamber, the second delivery condition allowing the plasma forming components to be delivered into the outer region of the process chamber while at the same time preventing the same plasma forming components from being delivered into the inner region of the process chamber;

continuously delivering second plasma forming components to the process chamber;

via a second time multiplexing operation that is separate from the time multiplexing operation associated with the plasma forming components, selectively switching the delivery of the second plasma forming components back and forth between a first delivery condition where the second plasma forming components are only delivered to an inner region of the process chamber, and a second delivery condition where the second plasma forming components are only delivered to an outer region of the process chamber so as to effect the concentration of the second plasma forming component in an inner and an outer region of the process chamber, the first delivery condition allowing the second plasma forming components to be delivered into an inner region of a process chamber while at the same time preventing the same second plasma forming components from being delivered into an outer region of the process chamber, the second delivery condition allowing the second plasma forming components to be delivered into the outer region of the process chamber while at the same time preventing the same second plasma forming components from being delivered into the inner region of the process chamber,

wherein the plasma forming components correspond to energy, and the second plasma forming components correspond to gas.

2. A method of forming a plasma associated with etching a semiconductor substrate, said method comprising:

continuously supplying power from a single power source;

continuously supplying a flow of gas from a single gas source while the power is being supplied;

via time multiplexing, alternately producing first and second electric fields inside the process chamber with the supplied power, the first electric field being produced at a first region of a processing zone, the second electric field being produced at a second region of the processing zone, the first and second electric fields being produced according to a power time sequence that is divided into a plurality of time slices;

controlling the parameters associated with the first and second electric fields at each time slice in order to effect the amount of ions in the first and second regions of the processing zone;

via time multiplexing, alternately releasing the supplied gas into the process chamber at a first region and a second region of the processing zone, the gases being released according to a gas time sequence that is divided into a plurality of time slices;

controlling the parameters associated with the released gas at each time slice in order to effect the amount of neutrals in the first and second regions of the processing zone.

3. The method as recited in claim 2 wherein the gas time sequence and power time sequence follow the same time scale.

4. The method as recited in claim 2 wherein the gas time sequence and power time sequence follow different time scales.

5. The method as recited in claim 2 wherein the amount of power used to create the first and second electric fields is different or wherein the time slices used to create the first and second electric fields are different in order to effect the amount of ions in the first and second regions of the processing zone.

6. The method as recited in claim 2 wherein the flow rates delivered to the first region and the second region are different or wherein the time slices associated with releasing gas to the first region are different than the time slices associated with releasing gas to the second region in order to effect the amount of neutrals in the first and second regions of the processing zone.

7. The method as recited in claim 2 wherein the electric fields are inductively coupled into the process chamber.

8. The method as recited in claim 2 wherein the first and second regions correspond to an inner region and an outer region, and wherein the inner region is associated with a center portion of the substrate and the outer region is associated with an edge portion of the substrate.

9. The method as recited in claim 8 wherein the parameters associated with the first and second electric fields are controlled so that the amount of ions in the outer region are different than the amount of ions in the inner region in order to improve processing uniformity.

10. The method as recited in claim 8 wherein the parameters associated with the released gas are controlled so that the amount of neutrals in the outer region are different than the amount of neutrals in the inner region in order to improve processing uniformity.