Semiconductor component comprising areas with a high platinum concentration

• US 7,282,750 B2
• Filed: 12/16/2004
• Issued: 10/16/2007
• Est. Priority Date: 12/18/2003
• Status: Active Grant

• Current Assignee: Stmicroelectronics France (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SA (STMicroelectronics NV)
• Inventors: Ducreux, Gérard
• Primary Examiner(s): MALSAWMA, LALRINFAMKIM HMAR
• Application Number:
  US11/014,614
• Publication Number:
  US 20050133887A1
• Time in Patent Office: 1,034 Days
• Field of Search: 257/170, 257/608, 257/610, 438/140, 438/543
• US Class Current: 257/170
• CPC Class Codes: H01L 21/221 of killers
• CPC Class Codes: H01L 29/0692 Surface layout
• CPC Class Codes: H01L 29/32 the imperfections being within the semiconductor body
• CPC Class Codes: H01L 29/74 Thyristor-type devices, e.g. having four-zone regenerative action two-terminal thyristors H01L29/87
• CPC Class Codes: H01L 29/861 Diodes

Abstract

A structure formed in a semiconductor substrate having at least one area having a high concentration of atoms of a metal such as platinum or gold, in which the area is surrounded with at least one first trench penetrating into the substrate.

Claims

1. A structure formed in a semiconductor substrate comprising at least one area having a high concentration of atoms of a metal, wherein said area is surrounded with at least one first trench penetrating into the substrate, the number n, the depth p, the spacing e, and the width t of trenches being a function of the depth 1′

of the area and the ratio k between the surface diffusion speed and the volume diffusion speed of the said metal according to the following relation;

(2p+e+t)*n>

k*1′

.

2. The structure of claim 1, wherein said at least one first trench is filled with an insulator.

3. The structure of claim 2, wherein said insulator comprises silicon oxide.

4. The structure of claim 1, wherein said at least one first trench has a depth ranging between 5 and 50 μ

m.

5. The structure of claim 1, further comprising at least one second trench in the substrate surface opposite to that comprising said at least one first trench, and substantially opposite thereto.

6. The structure of claim 1, wherein said area corresponds to all or part of the semiconductor areas constitutive of a diode.

7. The structure of claim 1, wherein said at least one first trench is formed in an insulating wall insulating a component comprising said area from other components.

8. The structure of claim 1, comprising a fast diode and of a slow diode formed of a semiconductor region of a first type formed in a layer of a second type, said at least one trench being formed inside the periphery of said region.

10. The structure of claim 1, wherein said metal comprises one of platinum and gold.

11. The structure of claim 1, wherein the at least one first trench comprises multiple trenches.

9. The A method for forming, in a semiconductor substrate, an area having a high concentration of atoms of a metal, comprising:

forming at least one first trench penetrating into the substrate around said area, the number n, the depth p, the spacing e, and the width t of trenches being a function of the depth 1′

of the area and the ratio k between the surface diffusion speed and the volume diffusion speed of the said metal according to the following relation;

(2p+e+t)*n>

k*1′

;

depositing said metal substantially above the central portion of said area; and

diffusing the metal into all of said area.

12. The structure of claim 9, wherein said metal comprises platinum.