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Stress assisted current driven switching for magnetic memory applications

  • US 7,282,755 B2
  • Filed: 11/14/2003
  • Issued: 10/16/2007
  • Est. Priority Date: 11/14/2003
  • Status: Expired due to Fees
First Claim
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1. A magnetic memory comprising:

  • a plurality of magnetic elements, each of the plurality of magnetic elements being configured to be written using spin transfer;

    at least one stress-assist layer configured to exert at least one stress on at least one magnetic element of the plurality of magnetic elements during writing.wherein each of the plurality of magnetic elements further includes a first lead and a second lead for driving current through the magnetic element in a perpendicular-to-a plane direction to allow the magnetic element to be written using spin transfer.

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